JSTS:Journal of Semiconductor Technology and Science

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Extraction of Ballistic Parameters in 65 nm MOSFETs

  • Kim, Jun-Soo (Nano Systems Institute (NSI), Inter-University Semiconductor research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jae-Hong (Nano Systems Institute (NSI), Inter-University Semiconductor research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Kwon, Yong-Min (Nano Systems Institute (NSI), Inter-University Semiconductor research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Nano Systems Institute (NSI), Inter-University Semiconductor research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Nano Systems Institute (NSI), Inter-University Semiconductor research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (Nano Systems Institute (NSI), Inter-University Semiconductor research Center (ISRC), and School of Electrical Engineering, Seoul National University)
  • Published : 2009.03.31
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Abstract

The channel backscattering coefficient and injection velocity have been extracted experimentally in 65nm MOSFETs. Thanks to an experimental extraction methodology taking into account multi-subband population, we demonstrate that the short channel ballistic efficiency is slightly greater than long channel ballistic efficiency.

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References

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