• Journal of the Korean Chemical Society
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• v.40 no.8
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• pp.535-541
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• 1996

In preparation of fine alumina powders with use of vesicle, the effect of variation of pH in extravesicular dispersion system to mechanism of precipitation and shape and size distribution of precipitate was investigated. The results of observation by TEM and turbidimeter were obtained as follows. Reaction between aluminum ion and hydroxyl ion to produce precipitate within vesicle was initiated at pH 11.4 and spherical fine precipitates, about 50 nm size, were formed at pH 12.0. About pH 12.3, size of precipitates in vesicle grew twice as great as those formed below pH 12.0 because of the agglomeration and coalescence of vesicleswith time.

• Journal of the Korean Chemical Society
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• v.51 no.2
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• pp.147-153
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• 2007

A simple, selective and highly sensitive flow injection catalytic method was presented for determination of ruthenium based on its catalytic effect on the oxidation of pyronin B by periodate in pH=1.0. The reaction rate is controlled specrophotometricaly by monitoring the dye absorbance at 555 nm. The optimized conditions make it possible to determine ruthenium in the ranges of 0.1-10.0 ng/mL (r2=0.9982) and 10.0-50.0 ng/mL (r2=0.9934) with a detection limit of 0.04 ng/mL and a sample rate of 30±5 samples/h. Relative standard deviation for the results of five replicate measurements does not exceed 1.44%. The proposed method has been successfully applied for quantitation of ultra trace amounts of ruthenium in some environmental and biological samples.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.43-51
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• 2013

This paper presents a design and implementation of a low power switched-capacitor 3rd-order delta-sigma modulator for a digital hearing-aid application. The power consumption is reduced by minimizing the output swing of integrators through optimizing the coefficients of modulator architecture and using class-AB output operational amplifiers. The modulator was implemented in a 130nm CMOS technology, and measured to have 79dB of SNR(Signal-to-Noise Ratio) in the signal bandwidth between 100Hz and 10kHz with an oversampling ratio of 160. The power consumption was $60{\mu}W$ from 1.2V power supply and the modulator core occupied $0.53mm{\times}0.53mm$.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.35-42
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• 2013

In this paper, the analog performance of FinFET structure was estimated by extracting the DC/AC characteristics of the 22 nm process FinFET structures with different layout considering spacer and SEG using 3D device simulator, Sentaurus. Based on the analysis results, layout methods to enhance the analog performance of multi-fin FinFET structures are proposed. By adding the spacer and SEG structures, the drive current of 1-fin FinFET increases. However, the unity gain frequency, $f_T$, reduces by 19.4 % due to the increase in the total capacitance caused by the added spacer. If the process element is not included in multi-fin FinFET, replacing 1-finger with 2-finger structure brings approximately 10 % of analog performance improvement. Considering the process factors, we propose methods to maximize the analog performance by optimizing the interconnect and gate structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.399.2-399.2
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• 2016

Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 높은 효율과 낮은 제조비용, 높은 신뢰성으로 인해 박막 태양전지 중 가장 각광받고 있다. 특히 유리기판 대신 가볍고 유연한 철강소재나 플라스틱 소재를 이용하여 발전분야 외에 건물일체형, 수송용, 휴대용등 다양한 분야에 적용이 가능하다. 이러한 유연 기판을 이용한 CIGS 태양전지의 개발을 위해서는 기판의 특성에 따른 다양한 공정개발이 선행되어야 한다. Poly-imide와 같은 유연기판은 공정온도가 $400^{\circ}C$이하로 낮고 기판이 매우 얇아 기존 Mo 공정을 개선하여야한다. 이러한 유연기판의 특성을 고려하여 본 연구에서는 기존 bi-layer Mo의 bottom layer의 두께를 조절하여 박막의 strain을 조절하였다. 유연기판으로는 SKC KOLON에서 제조된 GL type의 기판을 사용하였다. 기판의 두께는 50um이다. 먼저 Mo의 bottom layer 두께 비율을 기존 12.5%에서 50%로 증가 시켰으며 전체 박막의 두께 역시 900nm에서 500nm로 두께를 감소시키며 실험을 실시하였다. 그 후 흡수층은 Co-Evaporation 방법을 이용하여 제조하였으며 이때 공정온도는 기존 공정온도에서 450, $400^{\circ}C$로 낮추어 흡수층을 제조하였다. 소자 제조 후 초기 Mo의 strain 개선과 저온공정이 적용되지 않은 경우 4.4%에서 공정 최적화 후 13%로 효율이 증가하였다. 제조된 흡수층은 SEM, XRF, XRD등을 이용하여 분석하였으며 그 외 일반적인 방법을 이용하여 Mo, CdS, TCO, Al grid를 제조하였다. AR 코팅은 제외 하였으며 제조된 소자는 솔라 시뮬레이터를 이용하여 효율 특성 분석을 실시하였으며 Q.E. 분석을 실시하였다.

• Applied Chemistry for Engineering
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• v.26 no.4
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• pp.427-431
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• 2015

In this study, vanadium dioxide ($VO_2$) powder well known as a thermochromic material was prepared from $V_2O_5$ powder and oxalic acid dihydrate by hydrothermal and calcination process at various conditions. The chemical bonding and crystal structures in addition to thermal property of samples were determined using FE-SEM, XRD, XPS, and DSC. Also, spectroscopic and thermochromic properties of film samples were analyzed by UV-Vis-NIR spectroscopy after the thin film was prepared from the sol dispersed with the size of below 50 nm by the ball-milling of powder sample. With increasing the calcination temperature, the phase transition temperature of samples increased from $40^{\circ}C$ to $70^{\circ}C$ due to the increase of particle size.

• Polymer(Korea)
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• v.27 no.4
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• pp.370-376
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• 2003

Poly(DL-lactide-co-glycolide) nanoparticles were prepared by the modified spontaneous emulsification solvent diffusion method. Polymer solution was prepared by two water-soluble organic solvents, such as ethanol and acetone. Because of its biocompatible nature, PEG-PPG diblock copolymer was used as surfactant and stabilizer. The influence of several preparative variables on the nanoparticle formation, such as type and concentration of stabilizing agent, stirring methods, water/oil phase ratio and polymer concentration were investigated in order to control and optimize the process. After preparation of nanoparticles, particle size and distribution were evaluated by the light scattering particle analyzer. As results, the particle size was 50-200 nm and dispersibility was monodisperse. It was found that the appropriate selections of binary solvent mixtures and polymeric concentrations in both organic and aqueous phases could provide a good yield and favorable physical properties of PLGA nanoparticles.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.7 s.349
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• pp.1-6
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• 2006

We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.

• Journal of the korean academy of Pediatric Dentistry
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• v.26 no.3
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• pp.466-472
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• 1999

The insoluble glucan is the major substance of dental plaque. In order to isolate the bacteria inhibiting the formation of insoluble glucan in disposable cuvette, saliva was got from about 10 thousand children. The isolated bacteria were tested by API 20S kit and API 50 CHL kit. These bactreia were identified as Streptococcus oralis, Streptococcus mitis, Streptococcus mitior, Streptococcus sanguis, Enterococcus durans, Lactococcus lactis, Lactobacillus acidophilus. When Streptococcus mutans was cultured with Streptococcus oralis, Streptococcus mitis, Streptococcus mitior, Streptococcus sanguis, Enterococcus durans, Lactococcus lactis, or Lactobacillus acidophilus in disposable cuvette, the optical density at 550 nm was 0.823, 0.912, 0.894, 0.878, 0.753, 0.845, 1.021 respectively, while being 1.503 in the disposable cuvette culturing Streptococcus mutans only.