• Korean Journal of Materials Research
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• v.14 no.2
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• pp.83-89
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• 2004

SiC nanotubes were synthesized by SLS growth mechanism using various metal catalysts. Synthesized nanotubes had mean diameters of 20~50 nm and several $\mu\textrm{m}$ length. The kind of catalysts affected microstructures of SiC nanotubes by different diffusion routes. These differences are attributed to catalysts' physical properties and relative activities to the graphite substrate. Fe acted as a good catalyst of SLS growth mechanism. But in case of Ni, SiC nanotubes grew slowly. Optical property was measured by photoluminescence measurement. Relatively broad peak was obtained and mean peak positioned at about 430 nm. This result was the same as other nanocrystalline SiC materials, but was different from the results of bulk SiC probably due to quantum confinement effect and defect in the grown SiC nanotube.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.429-432
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• 1987

A new LOCOS (Local Oxidation of Silicon) process using a thin nitride film directly deposited on the silicon substrate by LPCVD has been developed in order to reduce the bird's beak length. SEM studies showed that nitride thickness of 50nm can decrease the bird's beak length down to 0.2um with 450nm field oxide. No crystalline defects are observed around the bird's beak after the Wright etch. A 30% improvement in current density was obtained when this new method was applied to MOS transistors (W/L*2.9/20.4) compared to conventional LOCOS process (bird's beak length=0.7um). Other various electrical parameters improved by this new simple LOCOS process are reported in this paper.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.408-412
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• 2002

Ga$_2$O$_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about 10~200nm width and 10~50nm thickness. The nanobelt, growing along the direction perpendicular to the (010) plane and enclosed by (101) and (101) facets, shows no defect and no dislocation.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.37-40
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• 2014

A novel memory is reported, in which $Ge_2Sb_2Te_5$ (GST) has been used as a floating gate. The threshold voltage was shifted due to the phase transition of the GST layer, and the hysteretic behavior is opposite to that arising from charge trapping. Finite Element Modeling (FEM) was adapted, and a new simulation program was developed using c-interpreter, in order to analyze the small shift of threshold voltage. The results show that GST undergoes a partial phase transformation during the process of RESET or SET operation. A large $V_{TH}$ shift was observed when the thickness of the GST layer was scaled down from 50 nm to 25 nm. The novel 1 transistor PCM (1TPCM) can achieve a faster write time, maintaining a smaller cell size.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.646-647
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• 2006

Nano-sized WC particles in WC/Co composite powders were synthesized by mechanochemical method. The raw powders$(WO_3,\;Co_3O_4,\;VC,\;Cr_3C_2$ and graphite) were mixed by planetary milling for 30 hours. The compositions were WC-10 and -20 wt% Co added VC and $Cr_3C_2$. The direct reduction and carburization of the mixed powders were carried at $900\;^{\circ}C$ for 1 to 3 hours under flowing Ar gas. The mean size of WC particles in WC/Co composite powders was about 16 nm. The resultant powders were compacted and sintered at $1300{\sim}1360\;^{\circ}C$ for 0.5 hour. After sintering the mean size of WC particles was about 50 nm.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.418-419
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• 2006

In the present, the focus is on the synthesis of nanostructured TiC/Co composite powder by the spray thermal conversion process using titanium dioxide powder has an average particle size of 50 nm and cobalt nitrate as raw materials. The titanium-cobalt-oxygen based oxide powder prepared by the combination of the spray drying and desalting methods. The titanium-cobalt-oxygen based oxide powder carbothermally reduced by the solid carbon. The synthesized TiC-15wt.%Co composite powder at 1473K for 2 hours had an average particle size of 150 nm.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.97-98
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• 2002

$Ga_2O_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about $10{\sim}200nm$ width and $10{\sim}50nm$ thickness. Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. In cathodoluminescence(CL), the peak energy of near band-edge(NBE) emission was determined for nanobelts, nanorods, and nanowires.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.475-476
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• 2005

Efficient electron injection is essential to achieve bright and efficient organic light-emitting diodes (OLEDs). In spite of high work function of Al, it is a common cathode because of its stability. In this paper, to overcome the poor electron injection in OLEDs with Al cathode, OLEDs with various composite cathodes were fabricated and investigated using a conventional OLEDs structure of indium tin oxide ITO/NPB(40 nm)/$Alq_3$(50 nm)/Al. composite cathodes were composed of alkaline materials such as Ca and Li, Al deposition or codeposited with AI. We showed best performance at the device with composite cathode (LiF/Al).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.192.2-192.2
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• 2013

Crystalline order and surface stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin films on organic surface were investigated using grazing incidence wide angle x-ray scattering and x-ray reflectivity measurements. In the initial growth regime (less than 20 nm), HATCN molecules were stacked to low crystalline order with substantial amorphous phase. Meanwhile, a thicker film with 50 nm thickness showed high crystalline order of hexagonal phase with three different orientational domains. The domain distribution was quantitatively obtained as a function of tilted angle. By an organic-inorganic interface formation of IZO/HATCN thin film from an indium zinc oxide (IZO) electrode deposition, the surface stability of HATCN film was investigated and the sharp interface was confirmed by the x-ray reflectivity measurement.