• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.226-226
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.

• Korean Journal of Optics and Photonics
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• v.15 no.1
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• pp.17-21
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• 2004

We demonstrate an S/S＋band discretely tunable thulium doped fiber laser (TTDFL), anchored on a 50-㎓ ITU-T grid. Investigating the inversion analysis of the thulium doped fiber (TDF) in applying a dual wavelength (1.4 m and 1.5 m) pumping scheme, a laser whose tuning range covers most of the S/S＋band has been obtained. Within the wide 3-㏈ bandwidth of 65.1 nm, the output power of the tunable laser exceeds 6.1 ㏈m with very flat spectral profile and the number of DWDM channels generated is as large as 178. If we increase the subsidiary pump power to 22 ㎽, the bandwidth is expanded up to 66.2 nm. By controlling the temperature of the fine grid filter, we have also shown that the frequency locking capability of the laser can be improved. The laser developed in this work is expected to be utilized as a practical optical source providing reference wavelengths in the S/S＋band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1039-1044
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• 2009

Red color OLED has been fabricated by the doping method apply to CBP using co-evaporation, GDI4349 of phosphorescent dopant, and rubrene of fluorescent dopant. The OLED structure are multi-layer of ITO(150 nm)/ELM_HIL(50 nm)/ELM_HTL(30 nm)/CBP : Rubrene, GDI4349 (30 nm)/BAlq (30 nm)/LiF(0.7 nm)/Al (100 nm). Accomplished best result at 3 vol.% of rubrene when the OLEDs were made of 1, 3, 5, 7, 9 vol.% doped rubrene. The highest efficiency of 7.2 cd/A was resulted at 8 vol.% of GDI4349 when the OLEDs were made among 5, 8, 11, 14 vol.% of GDI4349. Obviously, the best concentration of rubrene at 3 vol.% and changing GDI4349 concentration to 5, 8, 11, 14 vol.% OLED dramatically enhanced characteristic of resulted 10.7 cd/A at 8 vol.% of GDI4349. This result would understand to analyse as the emission efficiency increases by energy transport efficiency increase using GDI4349 energy transfer when rubrene absorbs the energy from CBP of fluorescences host.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.381-386
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• 2012

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which $Alq_3$ as organic buffer layer and LiF and Al as inorganic protective layers were deposited to protect the damage of OLED by epoxy. And then the OLEDs were attached to flat glass by printing method using epoxy. The basic structure of OLED doped with rubrene of 1 vol.% as emitting layer is ITO(150 nm) / 2-TNATA(50 nm) / ${\alpha}$-NPD(30 nm) / $Alq_3$:Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). In case of depositing $Alq_3$, LiF and Al and then attaching of flat glass onto OLED, current density, luminance, efficiency and driving voltage were not changed and lifetime was increased according to thickness of Al as inorganic protective layers. The lifetime of OLED/$Alq_3$/LiF/Al_4/glass structure was 139 hours increased by 15.8 times more than bare OLED of 8.8 hours and 1.6 times more than edge sealed OLED of 54.5 hours.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.940-943
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• 2003

We report the fabrication and the characterization of white organic light-emitting devices consisting of a red-emitting layer of a new DCM derivative doped into 4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}-NPD$) and a blue-emitting layer of 1,4-bis(2,2-diphenyl vinyl)benzene (DPVBi). The device structure is ITO/PEDOT:PSS/${\alpha}-NPD$ (50 nm)/${\alpha}-NPD$:DCM (5 nm, 0.2 %)/DPVBi (x)/Alq3 (40 nm)/LiF (0.5 nm)/Al. The electroluminescence (EL) spectra consist of two broad peaks around 470 nm and 580 nm with the spectral emission depending on the thickness of DPVBi. The device with the DPVBi thickness of about 20 nm show a white light-emission with the Commission Internationale d'Eclairage(CIE) chromaticity coordinates of (0.33, 0.36). The external quantum efficiency is 2.6% and luminous efficiency is 2.0 lm/W at a luminance of 100 $cd/m^{2}$. The maximum luminance is about 30,270 $cd/m^{2}$ at 13.9 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.22-23
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• 2008

본 연구에서는 전면 유기 발광소자(TE-OLED)를 제작하여 전기 광학적 특성을 연구하였다. 전면 발광 OLED의 투명 전극으로 사용된 Al과 Ag의 박막 두께에 따른 투과율과 면저항값은 다음과 같이 나타났다. 파장 520nm의 기준으로 Al 금속 박막의 두께가 10nm 이하여야 50% 투과율을 보였고, 반면 Ag는 25nm 이하로 나타났다. 면저항값은 박막두께 20nm 기준으로 Al은 약 $40\Omega/\square$, Ag는 $10\Omega/\square$이하로 나타났다. 전면발광 방식의 시야각에 따른 빛의 세기는 cos $60^{\circ}$ 일 때 0.1로, TE-OLED는 시야각이 증가하였을 때 현저히 감소되는 것을 볼 수 있다. TE-OLED의 시야각의 증가에 따른 EL-peak 또한 약 520nm의 파장대에서 약 500nm으로 변화하였다. 전면 발광 방식의 반폭치(FWHM)는 배면 발광 방식 보다 약 32nm정도 좁게 나타났다.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.25-32
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• 2014

In this study, nano-sized cobalt oxide powder with an average particle size below 50 nm was prepared from a cobalt chloride solution by the spray pyrolysis process. The influences of reaction temperature on the properties of the generated powder were examined. The average particle size of the particles formed based on the spray pyrolysis process at a reaction temperature of $700^{\circ}C$ is roughly 20 nm. Moreover, most of these particles cannot appear with an independent type, thereby coexisting in a droplet type. When the reaction temperature increases to $800^{\circ}C$, the average particle size not only increases to roughly 40 nm but also shows a more dense structure while the ratio of particles which shows a polygonal form significantly increases. As the reaction temperature increases to $900^{\circ}C$, the distribution of the particles is from roughly 70 nm to 100 nm, while most of the particle surface is more intricately close and forms a polygonal shape. When the reaction temperature increases to $1000^{\circ}C$, the particle size distribution of the powder shows an existing form from 80 nm to at least 150 nm in an uneven form. As the reaction temperature increases, the XRD peak intensity gradually increases, yet the specific surface area gradually decreases.

• Journal of Applied Biological Chemistry
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• v.59 no.2
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• pp.99-102
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• 2016

The phototactic behavioral responses of Tribolium castaneum adults to light-emitting diodes (LEDs) of seven different wavelengths were determined under various conditions (light exposure times, light sources, and luminance intensities) and compared with those of a black light bulb (BLB) under laboratory conditions. Based on the attractive rate (%) of T. castaneum adults under optimal conditions (50 lx and an 48 h exposure time) in the dark, red LED ($625{\pm}10nm$) exhibited the highest potential attractive rate (97.8 %), followed by yellow ($590{\pm}5nm$, 68.9 %), green ($520{\pm}5nm$, 55.6 %), infrared (IR) (730 nm, 54.4 %), white (450-620 nm, 41.1 %), blue ($470{\pm}10nm$, 34.4 %), and ultraviolet (UV) (365 nm, 0.06 %) LEDs. In comparison, red LED (97.8 %) was approximately 3.4 times more attractive to T. castaneum adults than the BLB (28.9 %). These results indicate that a red LED trap could be useful to control T. castaneum adults.

• Korean Journal of Microbiology
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• v.29 no.4
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• pp.243-249
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• 1991

The chromatophore from the chemotrophically grown facultative anaerobic photosynthetic bacterium, Rhodopseudomonas gelatinosa ATCC 17013 was isolated through stepwise sucrose gradient centrifugation. The isolated chromatophore showed high activities of the cytochrome $bc_{1}$ complex and cytochrome c oxidase. The activity of cytochrome $bc_{1}$ complex was completely inhibited by .5$\mu$M antimycin A,10$\mu$M myxothiazol, and that of cytochrome c oxidase was completely inhibited by .$50\mu$M KCM and $100\mu$M $NaN_{3}$but not inhibited by carbon monoxie. The activity of cytochrome c oxidase of th chromatophore was increased by addition of ionophores or protonophores. The reduced-oxidised difference sspectrum of cytochrome $bc_{1}$ complex isolated by affivity chromatography showed the absorption maxima at 553 nm(shoulder at 547 nm), 520 nm, and 418.5 nm, on the other hand, that of cytochrome c oxidase showed .alpha., .betha. and soret peaks at 554 nm, 523 nm, and 421 nm, respectively. The cytochrome c oxidase from chemotrophically grown Rhodopseudomonas gelatinosa seems to be a b-type cytochrome c oxidase.