• Title/Summary/Keyword: 5.9GHz

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Design of Wideband Bow-Tie Antenna with Folded-Slit Band-Notch Structure (폴디드 슬릿 대역저지 구조를 적용한 광대역 보우타이 안테나 설계)

  • Nam, Hyun-Soo;Woo, Dong Sik;Kim, Sung-Kyun;Kim, In-Bok;Choi, Hyun-Chul;Kim, Kang Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.9
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    • pp.886-894
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    • 2014
  • A wideband bow-tie antenna fed by wideband microstrip-coplanar stripline(CPS) balun and band notch structures that can be applied to bow-tie antenna are proposed in this paper. In order to increase bandwidth, bow-tie radiators are reshaped so that the surface current flows continuously, and wideband impedance matching is achieved by adjusting strip width and spacing of CPS feeding line. The VSWR is measured as 2:1 over the wide frequency range of 2.3~12 GHz. The fabricated antenna size is $60mm{\times}60mm$. In order to achieve the band-notch function at WLAN(5.8 GHz), ${\lambda}/4$ folded-slits located ${\lambda}/4$ away from feeding point are utilized. To minimize the slit size, folded-slit type is adopted. The measured VSWR is 7:1 and gain attenuation is 14 dB at 5.8 GHz.

Microwave Dielectric Properties of (1-X)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) Ceramics with Sintering Temperature (소결온도에 따른 (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) 세라믹스의 마이크로파 유전특성)

  • 김재식;최의선;이문기;이영희
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.2
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    • pp.67-72
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    • 2004
  • The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=+450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.

A 5.8GHz SiGe Down-Conversion Mixer with On-Chip Active Batons for DSRC Receiver (DSRC수신기를 위한 능동발룬 내장형 5.8GHz SiGe 하향믹서 설계 및 제작)

  • 이상흥;이자열;이승윤;박찬우;강진영
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.4A
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    • pp.415-422
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    • 2004
  • DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this paper, a 5.8 GHz down-conversion mixer for DSRC communication system was designed and fabricated using 0.8 ${\mu}{\textrm}{m}$ SiGe HBT process technology and RF/LO matching circuits, RF/LO input balun circuits, and If output balun circuit were all integrated on chip. The chip size of fabricated mixer was 1.9 mm${\times}$1.3 mm and the measured performance was 7.5 ㏈ conversion gain, -2.5 ㏈m input IP3, 46 ㏈ LO to RF isolation, 56 ㏈ LO to IF isolation, current consumption of 21 mA for 3.0 V supply voltage.

Wideband Tunable Semidynamic Fractional Frequency Divider MMIC (소수분주비를 갖는 광대역 가변 능동 주파수 분주기 마이크로파 집적 회로)

  • Won, Bok-Yeon;Shin, Jae-Wook;Shin, Hyun-Chol
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.5 s.120
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    • pp.522-529
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    • 2007
  • A semidynamic frequency divide-by-1.5 MMIC comprises a tunable polyphase filter, tunable image-rejection mixer, and a static divide-by-2 in the feedback path. Wideband suppression of unwanted tones is achieved by employing a tunable image-rejection mixer and a tunable single-stage polyphase filter. Implemented in GaInP/GaAs HBT technology, the divide-by-1.5 MMIC operates over the input frequency range of 4.5 to 9.2 GHz with better than -20 dBc suppressions of $1/3{\times}f_{in}\;and\;f_{in}$ tones, while dissipating 29 mA from 4.1 V supply.

Design Method for the Electromagnetic Wave Absorber at 9.45 GHz (9.45GHz용 전파흡수체의 설계 방법)

  • 김왕섭;김경용
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.4 no.2
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    • pp.11-16
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    • 1993
  • A design method for the electromagnetic wave absorber with the attenuation over 20 dB at a frequency was formulated. In addition to the matching boundary which is determined by the theoretical equation, several limiting conditions due to the fabrication process were examined. Based on the study on the effects of the variance of the thickness and permittivity on the electromagnetic wave absorbing characteristics, a mean to exclude such effects was also included in the proposed design method. The ranges of variables were limited as the frequency of 9.45 GHz and .epsilon.' = 5 ~ 30, when the effect of .epsilon. " was not considered.

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Microstrip Line Fed Rectangular Microstrip Patch Antenna and its Array (마이크로스트립 전송선으로 급전되는 사각형 마이크로스트립 패치 안테나 및 배열 안테나에 관한 해석 및 실험)

  • 박동국
    • Proceedings of the Optical Society of Korea Conference
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    • 1989.02a
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    • pp.152-156
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    • 1989
  • Parameters of a microstrip patch antenna such as the resonant frequency, radiation conductance, and the bandwidth are calculated. The rectangular microstrip patch antenna fed by a microstrip transmission line is fabricated and its resonant frequency, radiation pattern, and input voltage standing wave ratio are measured. The measured resonant frequency for 13.0mm$\times$9.7mm copper clad woven PTFE/glass laminate plate is 9.06Ghz, where the calculative is 9.00Ghz. And the measured vswr shows that the bandwidth of the antenna is 225MHz for vswr less then 2.0 which the calculated quality factor of the patch gives the bandwidth OF 280ghZ. The measured radiation pattern for 5 element as well as 4 element patch array shows less then 4dB deviation in the first side lobes from the designed values for both E and H plane pattern. This diviation is believed to be the power division errors of the power divider.

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RF Modeling of Silicon Nanowire MOSFETs (실리콘 나노와이어 MOSFET의 고주파 모델링)

  • Kang, In-Man
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.9
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    • pp.24-29
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    • 2010
  • This paper presents the RF modeling for silicon nanowire MOSFET with 30 nm channel length and 5 nm channel radius. Equations for analytical parameter extraction are derived by analysis of Y-parameter. Accuracies of the new model and extracted parameters have been verified by 3-dimensional device simulation data up to 100 GHz. The model verifications are performed under conditions of saturation region ($V_{gs}$ = $_{ds}$ = 1 V) and linear region ($V_{gs}$ = 1 V, $V_{ds}$ = 0.5 V). The RMS modeling error of Y-parameters was calculated to be 1 %.

Design of the Wideband Notched Compact UWB Antenna (넓은 대역폭이 소거된 소형 UWB 안테나 설계)

  • Kim, Cheol-Bok;Lim, Jung-Sup;Lee, Ho-Sang;Jang, Jae-Sam;Jung, Young-Ho;Jo, Dong-Ki;Lee, Mun-Soo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.9
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    • pp.54-62
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    • 2007
  • In this paper, a novel wideband notched compact UWB antenna is designed to satisfy the licensed UWB frequency bandwidth($3.1{\sim}4.8$ GHz, $7.1{\sim}10.2$ GHz) by symmetrically arranging two adjacent sectorial loop antennas. The wideband($4.8{\sim}7.1$ GHz) notch can be obtained by inserting the inverted-L shaped slits on the patch. The designed UWB antenna has return loss lower than -10dB at 3.1 GHz and over, group delay value lower than 1 ns and the linear phase property. The optimized UWB antenna inserted the inverted-L shaped slits has return loss great than -10dB, 5 ns of group delay, nonlinear phase and decreased gain properties over the frequency band, 4.8 GHz to 7.1 GHz.

Improvement of lower hybrid current drive systems for high-power and long-pulse operation on EAST

  • M. Wang;L. Liu;L.M. Zhao;M.H. Li ;W.D. Ma;H.C. Hu ;Z.G. Wu;J.Q. Feng ;Y. Yang ;L. Zhu ;M. Chen ;T.A. Zhou;H. Jia;J. Zhang ;L. Cao ;L. Zhang ;R.R. Liang;B.J. Ding ;X.J. Zhang ;J.F. Shan;F.K. Liu ;A. Ekedahl ;M. Goniche ;J. Hillairet;L. Delpech
    • Nuclear Engineering and Technology
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    • v.54 no.11
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    • pp.4102-4110
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    • 2022
  • Aiming at high-power and long-pulse operation up to 1000 s, some improvements have been made for both 2.45 GHz and 4.6 GHz lower hybrid (LH) systems during the recent 5 years. At first, the guard limiters of the LH antennas with graphite tiles were upgraded to tungsten, the most promising material for plasma facing components in nuclear fusion devices. These new guard limiters can operate at a peak power density of 12.9 MW/m2. Strong hot spots were usually observed on the old graphite limiters when 4.6 GHz system operated with power >2.0 MW [B. N. Wan et al., Nucl. Fusion 57 (2017) 102019], leading to a reduction of the maximum power capability. With the new limiters, 4.6 GHz LH system, the main current drive (CD) and electron heating tool for EAST, can be operated with power >2.5 MW routinely. Long-pulse operation up to 100 s with 4.6 GHz LH power of 2.4 MW was achieved in 2021 and the maximal temperature on the guard limiters measured by an infrared (IR) camera was about 540 ℃, much below the permissible value of tungsten material (~1200 ℃). A discharge with a duration of 1056 s was achieved and the 4.6 GHz LH energy injected into the plasma was up to 1.05 GJ. Secondly, the fully-active-multijunction (FAM) launcher of 2.45 GHz system was upgraded to a passive-active-multijunction (PAM), for which the density of optimum coupling was relatively low (below the cut-off value). Good coupling with reflection coefficient ~3% has been achieved with plasma-antenna distance up to 11 cm for the new PAM. Finally, in order to eliminate the effect of ion cyclotron range of frequencies (ICRF) wave on 4.6 GHz LH wave coupling, the location of the ICRF launcher was changed to a port that is located 157.5° toroidally from the 4.6 GHz LH system and is not magnetically connected.

Optical packaging technology and characterization of analog PIN-Photodiode (Analog용 PIN-Photodiode의 광 패키징 기술 및 특성 연구)

  • Lee Chang Min;Kwon Kee Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.3 s.333
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    • pp.17-24
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    • 2005
  • We fabricated PIN-Photodiodes with a single mode fiber for analog communications and analyzed characteristics of the devices. The fabricated PIN-Photodiode shows a bandwidth of 1.5 GHz, a dark current of 20 p4 a capacitance of 0.48 pF, and the responsivity of 0.9 V/W, a second order distortion of -72 dBc. In this paper, we developed a new optical Packaging technology that is aligning in real-time monitoring of both responsivity and IM2 characteristics. As a result responsivity has been improved by 0.03 V/W, and also U has been improved by $3\~5\;dBc$. On the other hand, failure ratio has been reduced by $3.5\%$.