• Title/Summary/Keyword: 5.9 GHz

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A Study on Rectangular Planar Monopole Antenna with a Double Sleeve Using Half Cutting (하프 커팅을 이용한 이중 슬리브를 갖는 직사각형 평면 모노폴 안테나에 관한 연구)

  • Kang, Sang-Won;Chang, Tae-Soon;Choe, Gwang-Je
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.17 no.2
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    • pp.257-262
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    • 2017
  • In this paper, we proposed a rectangular planar monopole antenna with a double sleeve that applied to a half-cut and a discontinuous feed structure. A rectangular planar monopole antenna with a double sleeve was cut in half along the magnetic symmetry line, and impedance matching was achieved by a discontinuous structure was applied to a feeder and by adjusting the double sleeve gap. We used the HFSS simulator of ANSYS company to confirm the antenna parameter property, and the antenna size was $21{\times}40mm^2$. In the proposed antenna, the simulation frequency range with VSWR of 2 or less was 2.6GHz to 10.25GHz. The bandwidth was 7.65GHz. The frequency range of the fabricated antenna was 3.3GHz to 9.75GHz, and the bandwidth was 6.45GHz. The measured radiation pattern frequencies were 3.5GHz, 5.5GHz, 7.5GHz, and 9.5GHz. A radiation pattern similar to the dipole antenna pattern was obtained at all frequencies.

Wide Bandwidth Circularly Polarized Aperture Coupled Microstrip Antenna using Cross-slot (십자 슬롯을 이용한 광대역 원형편파 적층 개구결합 마이크로스트립 안테나)

  • 양태식;이범선
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.5
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    • pp.748-754
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    • 2000
  • A novel single feed wide band CP stacked microstrip antenna using crossed slots has been designed, fabricated and measured. For the single rediating element the designed 10dB return loss bandwidth is 34.5%99.45~13.54 GHz), 3dB axial ratio bandwidth is 18.7%(11.17~13.39GHz), and 6 dB gain bandwidth is 29%(10.21~13.64GHz). For the 2$\times$2 array designed using a sequential rotation method, the 10dB return loss bandwidth is 35.9%(9.69~13.94GHz), 3dB axial ratio bandwidth is 34.6GHz (9.93~14.03GHz), and 6dB gain bandwidth is 27.4%(10.35~13.6GHz). For the fabricated 8$\times$8 array antenna, the 10dB return loss bandwidth is 27.3%(10.17~13.41GHz), 3dB axial ratio bandwidth is 27.9GHz(10.1~13.4GHz), and the radiation pattern is good agreement with theory. This antenna can be used for broadband applications for communications or broadcasting in Ku band.

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5.8GHz Band Frequency Synthesizer using Harmonic Oscillator (하모닉 발진을 이용한 5.8GHz 대역 주파수 합성기)

  • Choi, Jong-Won;Lee, Moon-Que;Shin, Keum-Sik;Son, Hyung-Sik
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.304-308
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    • 2003
  • A low cost solution employing harmonic oscillation to the frequency synthesizer at 5.8 GHz is proposed. The proposed frequency synthesizer is composed of 2.9GHz PLL chip, 2.9GHz oscillator, and 5.8GHz buffer amplifier. The measured data shows a frequency tuning range of 290MHz, ranging from 5.65 to 5.94GHz, about 0.5dBm of output power, and a phase noise of -107.67 dBc/Hz at the 100kHz offset frequency. All spurious signals including fundamental oscillation power (2.9GHz) are suppressed at least 15dBc than the desired second harmonic signal.

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Design of a Dual Band High PAE Power Amplifier using Single FET and Class-F (Single FET와 Class-F급을 이용한 이중대역 고효율 전력증폭기 설계)

  • Kim, Seon-Sook;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.1
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    • pp.110-114
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    • 2008
  • In this paper, high efficient class F power amplifier with dual band has been realized. Dual band power amplifier have used modify stub matching for single FET, center frequency 2.14GHz and 5.2GHz respectively. Dual band amplifier is 32.65dBm output power, gain 11dB and PAE 36% at the 2.14GHz, 7dB gain at the 5.2GHz. Design of a dual band class F power amplifier using harmonic control circuit. The measured are 9.9dB gain, 30dBm output power and PAE 55% at the 2.14GHz, 11.7dB gain at the 5.2GHz. This paper is being used the load-pull method and it maximizes output power and it is using the only one transistor in the paper. As a result, this research will obtain a dual band high PAE power amplifier.

A Low Power Consumption 2.4 GHz Transceiver MMIC (저전력소모2.4 GHz 송수신 MMIC)

  • 황인덕
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.5
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    • pp.1-10
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    • 1999
  • A low power concumption 2.4 GHz one-chip transceiver MMIC was designed and fabricated using $1.0\mu\textrm{m}$ ion-implantation MESFET process and packaged on a 24 lead SSOP. In the transmitter mode, it revealed conversion gain of 7.5 dB, output IP3 of -3.5 dBm, and noise figure of 3.9 dB at 2.44 GHz with 3.9 mA current consumption. In the receiver mode, it revealed voltage sensitivity of 6.5 mV/$\mu\$W with 2 .0 mA current consumption. Comparing the fabricated MMIC with the results of MMICs reported elsewhere, it was shown that the fabricated MMIC had good performance. The low power consumption 2.4 GHz transceiver MMIC is expected to be used for various applications such as wireless local area networks, wireless local loops and RFID tags in ISM-band.

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Design of Inverse Class E 2.9 GHz/5.8 GHz Frequency Multiplier (역 E급 2.9 GHz/5.8 GHz 주파수 체배기 설계)

  • Kim, Tae-Hoon;Joo, Jae-Hyun;Koo, Kyung-Heon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.2
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    • pp.148-153
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    • 2011
  • In this paper, an inverse class E frequency multiplier has been designed to generate 5.8 GHz wireless LAN signal by multiplying 2.9 GHz input. The inverse class E frequency multiplier is operating with low inductance value and low peak drain voltage than the class E frequency multiplier. Measurement shows the output power of 21 dBm, the mutiplier gain of 6 dB, and the PAE(Power Added Efficiency) of 35 % with 15 dBm input power.

Design of MMIC SPDT Switches in the ISM Band Using GaAs MESFETs (GaAs MESFET를 이용한 ISM 대역 MMIC SPDT 스위치 설계)

  • Park, Hun;Yun, Kyung-Sik;Ji, Hong-Koo;Kim, Hae-Cheon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.3A
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    • pp.179-184
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    • 2003
  • In this paper, an asymmetric topology of MMIC SPDT switch was proposed to increase the isolation in the receiving path and decrease the insertion loss with higher P1dB in the transmitting path for the ISM band. This SPDT switch was implemented with 0.5㎛ GaAs MESFETs processed by ETRI for the IDEC MPW project. For the receiving path the measured insertion losses were 1.518dB at 3GHz and 1.777dB at 5.75GHz and the isolations were 38.474dB at 3GHz and 29.125dB at 5.75GHz. For the transmitting path the insertion losses were 0.916dB at 3GHz and 1.162dB at 5.75GHz and the isolations were 23.259dB at 3GHz and 16.632dB at 5.75GHz. Compared to the symmetric topology the isolations of the receiving path for the asymmetric one were improved by 15.9dB at 3GHz and 11.9dB at 5.75GHz and its insertion loss was increased by about 0.6dB. In addition, P1dB of 21.5 dBm for the transmitting path was obtained, which is increased by 3.86dB compared to the symmetric one.

Quad-Band RF CMOS Power Amplifier for Wireless Communications (무선 통신을 위한 Quad-band RF CMOS 전력증폭기)

  • Lee, Milim;Yang, Junhyuk;Park, Changkun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.7
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    • pp.807-815
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    • 2019
  • In this paper, we design a power amplifier to support quad-band in wireless communication devices using RF CMOS 180-nm process. The proposed power amplifier consists of low-band 0.9, 1.8, and 2.4 GHz and high-band 5 GHz. We proposed a structure that can support each input matching network without using a switch. For maximum linear output power, the output matching network was designed for impedance conversion to the power matching point. The fabricated quad-band power amplifier was verified using modulation signals. The long-term evolution(LTE) 10 MHz modulated signal was used for 0.9 and 1.8 GHz, and the measured output power is 23.55 and 24.23 dBm, respectively. The LTE 20 MHz modulated signal was used for 1.8 GHz, and the measured output power is 22.24 dBm. The wireless local area network(WLAN) 802.11n modulated signal was used for 2.4 GHz and 5.0 GHz. We obtain maximum linear output power of 20.58 dBm at 2.4 GHz and 17.7 dBm at 5.0 GHz.

Frequency Characteristics of Octagonal Spiral Planar Inductor (팔각 나선형 박막 인덕터의 주파수 특성)

  • Kim, Jae-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.3
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    • pp.1284-1287
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    • 2012
  • In this study, we propose the structures of octagonal spiral planar inductors without underpass and via, and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The octagonal spiral planar inductors have inductance of 2.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 5 GHz, SRF of 11.1 GHz. Otherwise, square spiral planar inductors have inductance of 2.8nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 4.9 GHz, SRF of 10.3 GHz.

미국의 5.9GHz 차세대 DSRC 주파수 및 표준화 현황

  • 오종택
    • TTA Journal
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    • s.98
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    • pp.122-132
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    • 2005
  • 미국에서는 차세대 DSRC로 5.9GHz DSRC의 규격을 개발하고 있으며 이를 통해 매우 다양한 ITS 서비스를 제공하려고 한다. 이미 FCC에서는 75MHz의 주파수를 분배하였으며 교통성 주관으로 관련 표준화 작업이 진행되고 있다. 본 논문에서는 5.9GHz DSRC의 주파수 및 관련 기술에 대해서 연구$\cdot$분석하였다.

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