• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.117-124
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• 2009

This paper describes a 3 to 5 GHz frequency synthesizer for MB-OFDM (Multi-Band OFDM) UWB (Ultra- Wideband) application using 0.13 ${\mu}m$ CMOS process. The frequency synthesizer operates in the band group 1 whose center frequencies are 3432 MHz 3960 MHz, and 4488 MHz. To cover the overall frequencies of group 1, an efficient frequency planning minimizing a number of blocks and the power consumption are proposed. And, a high-frequency VCO and LO Mixer architecture are also presented in this paper. A new mixed coarse tuning scheme that utilizes the MIM capacitance, the varactor arrays, and the DAC is proposed to expand the VCO tuning range. The frequency synthesizer can also provide the clock for the ADC in baseband modem. So, the PLL for the ADC in the baseband modem can be removed with this frequency synthesizer. The single PLL and two SSB-mixers consume 60 mW from a 1.2 sV supply. The VCO tuning range is 1.2 GHz. The simulated phase noise of the VCO is -112 dBc/Hz at 1 MHz offset. The die area is 2 ${\times}$ 2mm$^2$.

• Journal of electromagnetic engineering and science
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• v.14 no.1
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• pp.1-8
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• 2014

A differential-cascode CMOS power amplifier (PA) with a supply modulator for envelope tracking (ET) has been implemented by 0.18 ${\mu}m$ RF CMOS technology. The loss at the output is minimized by implementing the output transformer on a FR-4 printed circuit board (PCB). The CMOS PA utilizes the $2^{nd}$ harmonic short at the input to enhance the linearity. The measurement was done by the 10MHz bandwidth 16QAM 6.88 dB peak-to-average power ratio long-term evolution (LTE) signal at 1.85 GHz. The ET operation of the CMOS PA with the supply modulator enhances the power-added efficiency (PAE) by 2.5, to 10% over the stand-alone CMOS PA for the LTE signal. The ET PA achieves a PAE of 36.5% and an $ACLR_{E-UTRA}$ of -32.7 dBc at an average output power of 27 dBm.

• Journal of electromagnetic engineering and science
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• v.5 no.1
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• pp.8-13
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• 2005

The InGaP/GaAs hetero-junction bipolar transistor(HBT) monolithic voltage-controlled dielectric resonator oscillator(VCDRO) is first demonstrated for a Ku-band low noise block down-converter(LNB) system. The on-chip voltage control oscillator core employing base-collector(B-C) junction diodes is proposed for simpler frequency tuning and easy fabrication instead of the general off-chip varactor diodes. The fabricated VCDRO achieves a high output power of 6.45 to 5.31 dBm and a wide frequency tuning range of ]65 MHz( 1.53 $\%$) with a low phase noise of below -95dBc/Hz at 100 kHz offset and -115 dBc/Hz at ] MHz offset. A]so, the InGaP/GaAs HBT monolithic DRO with the same topology as the proposed VCDRO is fabricated to verify that the intrinsic low l/f noise of the HBT and the high Q of the DR contribute to the low phase noise performance. The fabricated DRO exhibits an output power of 1.33 dBm, and an extremely low phase noise of -109 dBc/Hz at 100 kHz and -131 dBc/Hz at ] MHz offset from the 10.75 GHz oscillation frequency.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1942_1943
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• 2009

무선통신 시스템의 소형화와 저가격, 고품질, 다기능 재료 및 첨단 가공 기술과 연계된 필터설계 및 제작 기술에 대한 연구가 활발히 진행 중이다. 그러나 무선통신 시스템은 주파수라는 한정된 자원을 사용하기 때문에 주파수 자원의 효율적 관리를 위한 규제나 방안이 필요하고. 이에 따라서 여러 가지 대책과 방안이 필요로 하고 있다. 그래서 필터의 성능개선을 위한 연구가 본질 적으로 중요하게 되었다. 본 논문은 체비세프(Chebyshev)필터와 버터워스(Butterworth)필터를 이용한 대역통과(band pass) 필터를 제안한다. 이 필터는 안정화된 통과대역과 빠른 주파수 응답을 얻기위해 6차 체비세프필터와 8차 버터워스필터를 결합 하였다. 측정된 대역통과 필터는, 차단 영역을 구분하는 스커트(skirt)특성은 날카롭게(sharp) 되었고 통과대역의 평탄도 또한 개선되어짐을 볼 수 있다. 제안된 필터의 중심주파수는 2.5GHz, 대역폭은 200MHz이고, 대역내 평탄도는 0.5dB, 경사도는 오차가 60dB일때 체비세프는 210MHz, 버터워스는 340MHz, 체비세프-버터워스는 290MHz가 되어 버터워스 보다 좋게 되었으며 극점의 배치도 안정적인 결과를 얻었다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.5
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• pp.657-662
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• 2013

A size-reduced high frequency mixer designed by adopting artificial dielectric substrate is described in this work. The artificial dielectric substrate is composed by stacking the lower substrate in which a lot of metalized via-holes exist, and upper substrate on which microstrip lines are realized. The effective dielectric constant increases due to the inserted lots of via-holes, and this may be applied to size-reduction of high frequency circuits. In this work, in order to present an application example of size-reduction for active high frequency circuits using the artificial dielectric substrate, a 8GHz single gate mixer is miniaturized and measured. It is described that the basic circuit elements for mixers such as hybrid, low pass filter, and matching networks can be replaced by the artificial dielectric substrate for size-reduction. The final mixer has 55% of size compared to the normal one. The measured average conversion gain is around 3dB which is almost similar result as the normal circuit.

• Proceedings of the KSRS Conference
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• v.2
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• pp.1007-1010
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• 2006

This study investigates the spatial structure of the total cloud liquid water content Q fields over the Northwest Pacific Ocean during winter monsoon. The distributions of Q have been estimated from the brightness temperatures of the ocean - atmosphere system $T_B(f)$, where f is frequency, measured by AQUA AMSR-E in January -March 2003. Marine strati (St) and stratocumuli (Sc) are typical for winter monsoon season. They were analysed using mainly high-frequency channel at f = 36.5 GHz, vertical polarisation. $T_B$ data were accompanied by the data on near surface wind speed, air temperature and humidity from the nearest meteorological stations. Tow one-dimensional spectra were computed for downwind and crosswind sections of Q fields. The AMSR-E antenna field of view (14-8 km) and the cloud field sizes (100-1000 km) restricted the spatial scales. The results of case study Jan 31 2003 are presented. Scale-invariant spectrum is typical. In the cases of extended St levels a spectral slope equals about -1.7, conforming to classical -5/3 of turbulence theory. For Sc cases the absolute magnitude of spectral slope is rather higher, as a rule. The value is about -2. In the case when cloud streets are presented, a strait line form of spectrum is less reliable with a slope being rather lower (about -1.4).

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.58-62
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• 1999

We fabricated a new hairpin type HTS 2-pole microstrip Bandpass filter to operate at 5.8GHz. The fabrication method was pulsed laser deposition and YBCO films were deposited on ${\alpha}$-A1$_2O_3$ substrates with a CeO$_2$ thin layer as a buffer layer. We developed a new style hairpin type filter by using interdigitide innerpole. Compared to the saute size regular hairpin type filters, our filter had a lower center frequency, bandwidth and loss by an amount of 14.5%, 29.6%, 0.5488dB, respectively. The size of the filters were 13.7${\times}$3.3mm. We did simulations on the several types of band pass filters by using HFSS and serenade. We measured growth rate and Tc of YBCO films grown on CeO$_2$/ ${\alpha}$-A1$_2O_3$ substrates which were rotated while growing films.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.501-507
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• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. 96% $Al_2$ $O_3$and I-type were used as the material and shape of the core, respectively. The copper (Cu) wire with 6 turns was employed as the coils. The diameter (40${\mu}{\textrm}{m}$) and position (middle) of the coil and the length (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 to 50 over the frequency ranges of 250MHz to l GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ . The simulated data predicted the high-frequency data of the L and Q of the inductors developed well.l.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.243-246
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• 2004

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with PH, using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 ml/min for B2H6, 60 ml/min for PH3 and 1 l/min for N2. After as grown the films were insitu annealed fur 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is $10.108{\AA}$ for the reaction temperature at $450^{\circ}C$ and $29.626{\AA}$ fur the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of(1 0 1). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry. For the Result of microwaves absorbtion properties using VNA, it obtained the permittivity of BP about 8 between $1.5{\sim}2.5GHz$. In this study, it obtained the BP thin film by deposited in atmosphere pressure And BP thin film can be after to applicate as microwave absolution material is obtained.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.233-236
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• 2001

We have designed and fabricated ASK modulator MMIC operating at 5.8GHz for OBE used in AGPS (Automatic Gate Passing System). ASK modulator MMIC was designed to apply a sing1e supply voltage of 3V to the drain in order to decrease ACP (Adjacent Channel Power). The measurement result of this chip exhibits on/off characteristic over 30dB. The design parameters are optimized through ADS simulation tool. The layouts and fabrication o( ASK Modulator MMIC were designed and fabricated by using ETRI 0.5${\mu}{\textrm}{m}$ MESFET library. The chip sizes were 1mm $\times$1mm. The performance analysis of the implemented ASK Modulator based on the design parameters is accomplished.