• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.6.1-6.1
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• 2010

원자층 증착 기술 (Atomic Layer Deposition)은 기판 표면에서 한 원자층의 화학적 흡착 및 탈착을 이용한 nano-scale 박막 증착 기술이기 때문에, 표면 반응제어가 우수하며 박막의 물리적 성질의 재현성이 우수하고, 대면적에서도 균일한 두께의 박막 형성이 가능하며 우수한 계단 도포성을 확보 할 수 있다. 최근 ALD에 의한 박막증착 방법 중 플라즈마를 이용한 ALD 증착 방법에 대한 다양한 연구가 진행되고 있다. 플라즈마는 반응성이 좋은 이온과 라디컬을 생성하여 소스간 반응성을 좋게 하여, 소스 선택의 폭을 넓어지게 하고, 박막의 성질을 좋게 하며, 생산성을 높일 수 있는 장점이 있다. 그러나 플라즈마를 사용함으로써 플라즈마 내에 이온들이 가속되서 박막 증착 중에 기판 및 박막에 손상을 입혀 박막 특성을 열화 시킬 가능성이 있다. 따라서 플라즈마 발생 영역을 기판으로부터 멀리 떨어뜨린 원거리 플라즈마 원자층 공정이 개발 되었다. 이 기술은 플라즈마에서 생성된 ion이 기판이나 박막에 닫기 전에 전자와 재결합 되거나 공정 chamber에서 소멸하여 그 영향을 최소하고 반응성이 좋은 라디칼과의 반응만을 유도하여 향상된 막질을 얻을 수 있도록 하였다. 따라서 이 원거리 플라즈마 원자층 증착기술은 나노 테크놀러지 소자 개발하기 위한 나노 박막 기술에 있어서 그 활용이 점점 확대될 것이다. 그 적용으로써 리모트 플라즈마 원자층 증착 방법을 이용한 고유전 물질 개발이 있다. 반도체 소자의 고집적화 및 고속화가 요구됨에 따라 집적회로의 크기를 혁신적으로 축소하여 스위칭 속도(switching speed)를 증가시키고, 전력손실 (power dissipation)을 줄이려는 시도가 이루어지고 있다. 그 중 하나로 고유전율 절연막은 트렌지스터 소자의 스케일링 과정에 수반하여 커지는 게이트 누설 전류를 억제하기 위한 목적으로 도입되었다. 유전율이 크면 동일한 capacitance를 내는데 필요한 물리적인 두께를 늘릴 수 있어 전자의 tunneling을 억제할 수 있고 전력손실을 줄일 수 있기 때문이다. 이와 같은 고유전율 물질이 게이트 산화막으로 사용되기 위해서 높은 유전상수 열역학적 안정성, 낮은 계면 전하밀도, 낮은 EOT, 전극 물질과의 양립성 등의 특성이 요구되는데, 이에 따라 많은 유전물질에 대한 연구가 진행되었다. 기존 gata oxide를 대체하기 위한 가장 유력한 후보 재료로 주목 받고 있는 high-k 물질들로는 Al2O3, HfO2, ZrO2, La2O3 등이 있다. 본 발표에서는 ALD의 종류에 따른 기술을 소개하고 그 응용으로 고유전율 물질 개발 연구 (고유전율 산화물 박막의 증착, 고유전율 산화물의 열적 안정성 평가, Flatband 매카니즘 규명, 전기적 물리적 특성 분석)에 대해서 발표 하고자 한다.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.69-73
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• 2006

A full retention of the tetragonal phase with coarse grains $(50\~60\;{\mu}m)$ was possible with the specimen $ZrO_2-1.9\;mol\%\;Y_2O_3$. In these coarse grains, $\{101\}_t$ annealing twins were frequently observed, although they do not exist in the usual fine grained specimens. The morphology and growth rate of the isothermally formed individual products are studied at an optical microscopic level. The habit planes of both products are also identified by performing two-surface trace analysis on the grains whose orientations are determined by the Electron Back Scattering Pattern (EBSP) method. The morphologies of isothermal martensite were well-defined thin plates and lenticular types. The growth rate in their longitudinal directions was quite slow and temperature-dependent. A two-surface trace analysis, incorporated with the EBSP method, identified the habit planes near $\{013\}_c$, in agreement with previous reports obtained from TEM works.

• Journal of the Korean Ceramic Society
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• v.43 no.12 s.295
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• pp.764-767
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• 2006

Ni/YSZ $(Y_2O_3-stabilized\;ZrO_2)$ composite as an electrode component for High Temperature Electrolysis (HTE) was fabricated by mechanical alloying method using Ni and YSZ powders. Characterization of the synthesized composite was investigated with various analysis tools, including XRD, SEM and PSA, and a self-supporting planar unit cell prepared with the Ni/YSZ composite was prepared to study the electrochemical reactions for the production of hydrogen. The Ni/YSZ cermet is composed of crystalline Ni and YSZ, in a sub-micro scale, and has an even distribution without aggregated particles. In addition, under an electrochemical reaction, the unit cell showed an $H_2$ evolution rate from steam of 14 Nml/min and $600mA/cm^2$ of current density at the electrode.

• Journal of the Korean Institute of Gas
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• v.21 no.6
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• pp.52-60
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• 2017

In diffusion process exhaust line during semiconductor manufacturing process, In order to improve the transportation efficiency in the piping by removing "The reaction by-product, $ZrO_2$ and The unreacted material, TEMAZ, TMA, $O_3$, etc" and "Powder being deposited", the piping temperature was raised to $80^{\circ}C$ or more by using the heater jacket, and the bellows at the rear end of the vacuum pump ruptured. So conducted a case study and try to prevent the similar accidents from occurring through case studies. The causes of the accident were analyzed as follows: the inflow of outside air due to the generation of a gap on the suction side of the vacuum pump and heating the pipe with the heater jacket resulted in the overpressure in the pipe due to the volumetric expansion of the gas generated by decomposition of the unreacted TEMAZ, It can be assumed that the most vulnerable bellows of the piping has been ruptured. In order to prevent such accidents, This study is aimed to identify the cause of pipeline rupture accident and to establish safety measures for the prevention of similar accidents by evaluating physical hazards of TEMAZ, which is assumed to be the cause of pipe rupture accident.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.885-891
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• 2001

Ring/dot-type step-down piezoelectric transformer was manufactured by using Pb[(Mn$\sub$1/3/Sb$\sub$2/3)$\sub$0.05/Zr$\sub$0.475/Ti$\sub$0.475/]O$_3$ ceramics, which have excellent high-power piezoelectric properties. The characteristics of step-down piezoelectric transformer as a function of load resistance at output terminal was examined. Voltage gain was greatly dependent on drive frequency and load resistance, and showed maximum voltage gain at the resonance frequency. The output voltage was linearly increased as the input voltage increased. Voltage gain of the step-down piezoelectric transformer with respect to input voltage was very stable when the load resistance was in the range of 50-500 $\Omega$ .

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.615-618
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• 2004

The piezoelectricity and polarization of multilayer ceramic actuators, being designed to stack ceramic layer and electrode layer alternately, were investigated under a consideration of geometry, the thickness ratio of the ceramic layer to electrode layer The actuators were fabricated by tape-casting of $0.42PbTiO_3-0.38PbZrO_3-0.2Pb(Mn_{1/3}Nb_{2/3})O_3$ followed by laminating, burn-out and co-firing process. The actuators of $5\times5mm^2$ in area were formed in a way that $60{\sim}200{\mu}m$ thick ceramics were stacked 10 times alternately with $5{\mu}m$ thick electrode. Increase in polarization and electric field-displacement with increasing thickness ratio of the ceramic/electrode layer and thickness/cross section ratio were attributed to the change of $non-180^{\circ}/180^{\circ}$ domain ratio which was affected by the interlayer internal stress and Poisson ratio of ceramic layer. The piezoelectricity and actuation behaviors were found to be dependent upon the volume ratio (or thickness ratio) of ceramic layer relative to ceramic layer. Concerning with the existence of internal stress, the field-induced polarization and deformation were described in the multilayer actuator.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1244-1245
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.30.1-30.1
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• 2009

정보화가 급속히 진전됨에 따라 보다 많은 양의 정보를 전송, 처리, 저장하게 되면서 이를 위해 대용량, 고속, 비휘발성의 특징을 갖는 차세대 메모리의 개발이 절실히 요구되고있다. 이 중 저항 변화 메모리(ReRAM)는 일반적으로 TiO2, Al2O3, NiO2, HfO2, ZrO2 등의 전이금속산화물을 이용한 MIM 구조로서 적당한 전기 신호를 가하면 저항이 높아서 전도되지 않는 상태(Offstate)에서 저항이 낮아져 전도가 가능한 상태(On state)로 바뀌는 메모리 특성을가진다. ReRAM은 비휘발성 메모리이며 종래의 비휘발성 기억소자인 Flash memory 보다 access time 이105 배 이상 빠르고, 5V 이하의 낮은 전압에서도 동작이 가능하다. 또한 구조가 간단하여 공정 단순화가 가능하고 소자의 집적화도 쉽다는 점 등 많은 장점들이 있어서 Flash memory를 대체할 수 있는 유력한 후보로 여겨지고 있다. 본연구에서는 DC-magnetron Sputtering 방법으로 전이금속 박막을 증착하고, Dry furnace로 산화시켜 전이금속산화물 박막을 제작한 후 저항변화 특성을 연구하였다. 두 개의 전이금속산화물 박막을 dual-layer로 형성시켜 저항변화특성을 관찰하였으며 또한, 전이금속산화물 박막의 조성을 달리 하여 저항변화를 관찰 하였다. 전이금속산화물 박막의 전기적 특성을 알아보기 위해 Si(100) wafer 위에 Pt를 이용 MIM 형태로 capacitor 시편을 제작 하여, probe station으로 I-V 측정을 하였고 조성 및 표면 분석을 위해서는 AES와 AFM을, 미세구조를 분석을 위해서는 TEM과 SEM 을 사용하였다.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.181-184
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• 2017

Multilayer ceramics in which piezoelectric layers of $0.90Pb(Zr_{0.48}Ti_{0.52})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.05Pb(Zn_{1/3}Nb_{2/3})O_3$ (0.90PZT-0.05PMS-0.05PZN) stack alternately with silver electrode layers were prepared by an advanced low-temperature co-fired ceramic (LTCC) method. The electrical properties and bonding strength of the multilayers were associated with the interface morphologies between the piezoelectric and silver-electrode layers. Usually, the inner silver electrodes are fabricated by sintering silver paste in multi-layer stacks. To improve the interface bonding strength, piezoelectric powders of 0.90PZT-0.05PMS-0.05PZN with an average particle size of $23{\mu}m$ were added to silver paste to form a gradient interface. SEM observation indicated clear interfaces in multilayer ceramics without powder addition. With the increase of piezoelectric powder addition in the silver paste, gradient interfaces were successfully obtained. The multilayer ceramics with gradient interfaces present greater bonding strength as well as excellent piezoelectric properties for 30~40 wt% of added powder. On the other hand, over addition greatly increased the resistance of the inner silver electrodes, leading to a piezoelectric behavior like that of bulk ceramics in multilayers.