• Journal of the Mineralogical Society of Korea
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• v.19 no.2 s.48
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• pp.81-88
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• 2006

The Yttria Partially Stabilized Zirconia powder was prepared by spontaneous precipitation method using $ZrOCl_2{\cdot}8H_O-YCl_33{\cdot}6H_2O$ solution as a starting materials. The optimal experimental conditions such as concentration and pH of starting solutions, the amounts of stabilizer $Y_2O_3$ used, and sintered temperature were carefully studied. The best condition for synthesizing $ZrO_2$ was experimentally selected and applied throughout this study for the preparation of the 3 mole% $Y_2O_3$ partially stabilized zirconia, 3YSZ. The physical properties of 3YSZ was examined by XRD, Raman, DT A, and SEM. The structural transition from pure monoclinic high temperature $ZrO_2$ to tetragonal room temperature 3YSZ was made possible by the added amount of $Y_2O_3$ in the $ZrO_2+Y_2O_3$ system. All Raman Spectrum band appeared in the lower wave numbers rather than in higher wave numbers as structure changes from monoclinic to tetragonal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.172-173
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• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.513-519
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• 1994

Alumina composite was fabricated by introducing tetragonal ZrO2 in alumina composite of $\alpha$-alumina reinforced with in-situ formed La-$\beta$-aluminate (LaAl11O18). The powder mixture of composition (100-x)[88 Al2O3+(La2O3+11 Al2O3)]+x vol% ZrO2 was prepared with x from 0 to 40. Dense composites fabricated by hot-pressing exhibited bending strength up to 1200 MPa. The gain growth inhibiting effect of ZrO2 grains and La-$\beta$-aluminate platelets, and possibly the stress-induced phase transformation of ZrO2 have resulted in the high bending strength. The fracture toughness of the composite also increased up to 8.5 MPa.m1/2. The enhancement in toughness can be explained by transformation and microcrack toughening of ZrO2 and by crack deflection and bridging of La-$\beta$-aluminate platelets and ZrO2.

• Transactions of Materials Processing
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• v.7 no.5
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• pp.465-473
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• 1998

The effect of alloying elements of Ag-Cu-Zr-X brazing alloy on the microstructure and the bond strength of $Al_2O_3/Ni-Cr$ brazed steel joint was investigated. The reaction layer, $ZrO_2$ (a=5.146 ${\AA}$ , b=5.213 ${\AA}$ , c=5.311 ${\AA}$ )was formed at the interface of $Al_2O_3/Ni-Cr$ steel joint by the redox reaction between alumina and Zr. The addition of An and Al to the Ag-Cu-Zr brazing alloy gave rise to changes in the thickness of the reaction product layer and the morphology of the brazement. Sn caused the segregation of Zr was decreased b Al the $ZrO_2$ layer formed at the Ag-Cu-Zr-Al alloy was thinner than that of $ZrO_2$ formed at the Ag-Cu-Zr-An alloy. The fracture shear strength was strongly dependent on the microstructure of the brazement. Brazing with Ag-Cu-Zr-Sn alloy resulted in a better bond strength than with Ag-Cu-Zr or Ag-Cu-Zr-Al alloy.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.586-591
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• 2012

$Zr_2WP_2O_{12}$ powder, which has a negative thermal expansion coefficient, was synthesized by a solid-state reaction with $ZrO_2$, $WO_3$ and $NH_4H_2PO_4$ as the starting materials. The synthesis behavior was dependent on the solvent media used in the wet mixing process. The $Zr_2WP_2O_{12}$ powder prepared with a solvent consisting of D. I. water was fully crystallized at $1200^{\circ}C$, showing a sub-micron particle size. According to the results obtained from a thermal analysis, a $ZrP_2O_7$ was synthesized at a low temperature of $310^{\circ}C$, after which it was reacted with $WO_3$ at $1200^{\circ}C$. A new sintering additive, $Al(OH)_3$, was applied for the densification of the $Zr_2WP_2O_{12}$ powders. The cold isostatically pressed samples were densified with 1 wt% $Al(OH)_3$ additive or more at $1200^{\circ}C$ for 4 h. The main densification mechanism was liquid-phase sintering due to the liquid which resulted from the reaction with amorphous or unstable $Al_2O_3$ and $WO_3$. The densified $Zr_2WP_2O_{12}$ ceramics showed a relative density of 90% and a negative thermal expansion coefficient of $-3.4{\times}10^{-6}/^{\circ}C$. When using ${\alpha}-Al_2O_3$ as the sintering agent, densification was not observed at $1200^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.338-339
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• 2005

본 연구에서는 $Fe_2O_3$를 첨가한 $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi_{1-x})O_3$ 세라믹스에서 Zr/Ti 비 변화에 따른 소결 및 압전, 유전특성을 조사하였다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$+0.25Wt% $Fe_2O_3$ 계에서 Zr/(Ti+Zr)비(x)를 0.39에서 0.42까지 변화시킨 조성을 1100 - $1250^{\circ}C$ 온도에서 2시간 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성 및 RAINBOW 액츄에이터로의 응용을 조사하였다. $1150^{\circ}C$에서 소결한 0.405 조성(x)에서 유전상수(${\varepsilon}r$) = 4669, 전기기계결합계수(kp) = 0.75, 압전상수($d_{33}$) = 810 pC/N의 우수한 특성 값을 나타내었으며, 닥터블레이드법에 의해 RAINBOW 액츄에이터를 제작하여 변위특성을 조사하였다.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.259-265
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• 2014

$ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.368-375
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• 2000

Fracture toughness of particulate composites of Al2O3/SiC, Al2O3/ZrO2 and Al2O3/ZrO2/SiC was analysed theoretically. According to the suggested particle bridging model for obtaining the R-curve height, the crack extension resistance for the long crack was linearly proportional to the residual calmping stress at the interface between the second phase and the matrix. It was also a function of the particle size and the content. It was confirmed that the rising R-curve behavior of Al2O3 containing 30 vol% SiC particles of 3${\mu}{\textrm}{m}$ was owing to the strong crack bridging by SiC particles. For Al2O3/ZrO2/SiC composites, the tensional stress from the 3${\mu}{\textrm}{m}$ SiC particles was large enough to activate the spontaneous transformation of the ZrO2. The crack extension resistance due to the particle bridging mechanism did not seem to be affected much by the coupled toughening, but its resultant toughness increase could be significantly smaller due to the dependency on the matrix toughness.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.27-32
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• 2008

Novel long persistent phosphors of $CaZrO_3:Er^{3+}$ have been synthesized by traditional solid state reaction method. The long persistent phosphor crystalline particles were characterized by the X-ray diffraction (XRD), photoluminescence spectrophotometer, thermoluminescence (TL) and luminance meter. The results reveal that the samples are composed of single $CaZrO_3$ phase. The broadband emission spectra of 446 nm peak and 550 nm peak was revealed by synthesized at high temperature in $N_2$ gas. Green long persistent phosphors have been observed in the sys_em for over 6 h after UV irradiation (254 nm). The main emission peak was ascribed to $Er^{3+}$ ions transition from $^5D_{5/2}{\rightarrow}^4F_{9/2},\;^2H_{12/2},\;^4S_{3/2}{\rightarrow}^4I_{13/2}\;and\;^2G_{9/2}{\rightarrow}^4I_{13/2}$, and the afterglow may be ascribed to the suitable trap centers in the $CaZrO_3$ host lattice.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.853-855
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• 1998

The electrical resistivity and mechanical properties of the hot-pressed and annealed ${\beta}$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_{3}$(6:4wt%). In this microstructures. no reactions were observed between $\beta$-SiC and $ZrB_2$, and the relative density is over 97.6% of the theoretical density. Phase analysis of composites by XRD revealed mostly of a $\alpha$-SiC(6H, 4H), $ZrB_2$ and weakly $\beta$-SiC(15R) phase. The fracture toughness decreased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents and showed the highest for composite added with 4wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives. The electrical resistivity increased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation according to amount of liquid forming additives $Al_{2}O_{3}+Y_{2}O_{3}$. The electrical resistivity of composites is all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.