• Title/Summary/Keyword: 3D-stacked

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A Scheme to Control Laser Power and Exposure Time for Fabricating Precise Threedimensional Microstructures in Nano-stereolithography (nSL) Process (3 차원 나노 스테레오리소그래피의 정밀화를 위한 펨토초 레이저 출력-조사시간 제어방법)

  • 박상후;임태우;양동열
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.1365-1368
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    • 2004
  • A scheme to control the laser power and the exposure time was studied to fabricate precise microstructures using the nanostereolithography (nSL) process. Some recent works have shown that a three-dimensional (3D) microstructure can be fabricated by the photopolymerizing process which is induced by two-photon absorption (TPA) with a femtosecond pulse laser. TPA provides the ability to confine photochemical and physical reactions within the order of laser wavelength, so neardiffraction limit features can be produced. In the nSL process, voxels are continuously generated to form a layer and then another layer is stacked in the normal direction of a plane to construct a 3D structure. Thus, fabrication of a voxel with low aspect ratio and small diameter is one of the most important parameters for fabricating precise 3D microstructures. In this work, the mechanism of a voxel formation is studied and a scheme on the control of laser power and exposure for minimizing aspect ratio of a voxel is proposed.

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Impulse Noise Removal of LRF for 3D Map Building Using a Hybrid Median Filter (3D 맵 빌딩을 위한 하이브리드 미디언 필터를 이용한 LRF의 임펄스 잡음 제거)

  • Hwang, Yo-Seop;Kim, Hyun-Woo;Kim, Tae-Jun;Lee, Jang-Myung
    • Journal of Institute of Control, Robotics and Systems
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    • v.18 no.10
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    • pp.970-976
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    • 2012
  • In this paper, a single LRF has been used to produce a 3D map for the mobile robot navigation. The 2D laser scanners are used for mobile robots navigation, where the laser scanner is applied to detect a certain level of area by the straight beam. Therefore it is limited to the usages of 2D obstacle detection and avoidance. In this research, it is designed to complement a mobile robot system to move up and down a single LRF along the yaw axis. During the up and down motion, the 2D data are stacked and manipulated to build a 3D map. Often a single LRF data are mixed with Gaussian and impulse noises. The impulse noises are removed out by the hybrid median filter designed in this research. The 2D data which are improved by deleting the impulse noises are layered to build the 3D map. Removing impulse noises while preserving the boundary is a main advantages of the hybrid median filter which has been used widely to improve the quality of images. The effectiveness of this hybrid median filter for rejecting the impulse noises has been verified through the real experiments. The performance of the hybrid median filter is evaluated in terms of PSNR (Peak Signal to Noise Ratio) and the processing time.

A Differential Voltage-controlled Oscillator as a Single-balanced Mixer

  • Oh, Nam-Jin
    • International journal of advanced smart convergence
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    • v.10 no.1
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    • pp.12-23
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    • 2021
  • This paper proposes a low power radio frequency receiver front-end where, in a single stage, single-balanced mixer and voltage-controlled oscillator are stacked on top of low noise amplifier and re-use the dc current to reduce the power consumption. In the proposed topology, the voltage-controlled oscillator itself plays the dual role of oscillator and mixer by exploiting a series inductor-capacitor network. Using a 65 nm complementary metal oxide semiconductor technology, the proposed radio frequency front-end is designed and simulated. Oscillating at around 2.4 GHz frequency band, the voltage-controlled oscillator of the proposed radio frequency front-end achieves the phase noise of -72 dBc/Hz, -93 dBc/Hz, and -113 dBc/Hz at 10KHz, 100KHz, and 1 MHz offset frequency, respectively. The simulated voltage conversion gain is about 25 dB. The double-side band noise figure is -14.2 dB, -8.8 dB, and -7.3 dB at 100 KHz, 1 MHz and 10 MHz offset. The radio frequency front-end consumes only 96 ㎼ dc power from a 1-V supply.

Target Altitude Extraction for Multibeam Surveillance Radar in Normal Environmental Condition (정상 환경 상태에서 다중 빔 탐색 레이다의 표적 고도 추출)

  • Chung, Myung-Soo;Park, Dong-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.9
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    • pp.1090-1097
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    • 2007
  • The multibeam surveillance radar is a state-of art of 3D radar technology. It applies the stacked beam-on-received realized by a digital beamformer. In this paper, a design concept of beamformer and a method of target altitude extraction for multibeam surveillance radar in the normal environmental condition considering no multipath situations are proposed and investigated. The extraction algorithm based on antenna sine space coordinated system in a FFT digital beamformer is described. The proposed algorithm is simulated by 1 look-up table data and confirmed to have consistent results in accordance with a variety of target altitudes and a full radar frequency range.

An Evaluation Technique of Surface Roughness of Corroded Reinforcing Bar-in-Coils (코일철근의 표면 거칠기 물리량 평가 기술)

  • Roh, Young-Sook;Cho, Kang Woo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.10
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    • pp.6551-6557
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    • 2015
  • This paper discusses the surface roughness of corroded reinforcement rebar-in-coil focusing on the quantitative measurement technique using 3D scanner. Reinforcement rebar-in-coil was stacked in site for 0 day, 3 days, 7 days, 14 days and 21 days. And rebar-in-coil was corroded 0.04%, 0.3367%, 0.6157%, 0.7898%, and 1.1965% respectively. Using 3-dimensional scanner, each surface profile of reinforcement rebar-in-coil was established, and surface roughness was measured. Through the tests and analyses of corroded rebar-in-coil, the increase of fractal dimension for each rebar-in-coil was measured as 0.0216, 0.0235, 0.028, 0.0319, and 0.0455 for different stacked periods. Therefore, surface assessment technique using fractal dimension showed similar results with the actual corrosion rate.

Manufacturing yield challenges for wafer-to-wafer integration (Wafer-to-Wafer Integration을 위한 생산수율 챌린지에 대한 연구)

  • Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.1
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    • pp.1-5
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    • 2013
  • Wafer-to-Wafer (W2W) integration technology is an emerging technology promising many benefits, such as reduced size, improved performance, reduced power, lower cost, and divergent integration. As the maturity of W2W technology progresses, new applications will become more viable. However, at present the cost for W2W integration is still very high and both manufacturing yield and reliability issues have not been resolved yet for high volume manufacturing (HVM). Especially for WTW integration resolving compound yield issue can be a key factor for HVM. To have the full benefits of WTW integration technology more than simple wafer stacking technologies are necessary. In this paper, the manufacturing yield for W2W integration is described and the challenges of WTW integration will be discussed.

Dual Polarized Array Antenna for S/X Band Active Phased Array Radar Application

  • Han, Min-Seok;Kim, Ju-Man;Park, Dae-Sung;Kim, Hyoung-Joo;Choi, Jae-Hoon
    • Journal of electromagnetic engineering and science
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    • v.10 no.4
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    • pp.309-315
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    • 2010
  • A dual-band dual-polarized microstrip antenna array for an advanced multi-function radio function concept (AMRFC) radar application operating at S and X-bands is proposed. Two stacked planar arrays with three different thin substrates (RT/Duroid 5880 substrates with $\varepsilon_r$=2.2 and three different thicknesses of 0.253 mm, 0.508 mm and 0.762 mm) are integrated to provide simultaneous operation at S band (3~3.3 GHz) and X band (9~11 GHz). To allow similar scan ranges for both bands, the S-band elements are selected as perforated patches to enable the placement of the X-band elements within them. Square patches are used as the radiating elements for the X-band. Good agreement exists between the simulated and the measured results. The measured impedance bandwidth (VSWR$\leq$2) of the prototype array reaches 9.5 % and 25 % for the S- and X-bands, respectively. The measured isolation between the two orthogonal polarizations for both bands is better than 15 dB. The measured cross-polarization level is ${\leq}-21$ dB for the S-band and ${\leq}-20$ dB for the X-band.

FE-SEM Image Analysis of Junction Interface of Cu Direct Bonding for Semiconductor 3D Chip Stacking

  • Byun, Jaeduk;Hyun, June Won
    • Journal of the Korean institute of surface engineering
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    • v.54 no.5
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    • pp.207-212
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    • 2021
  • The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm2 and 3087 N/cm2. At 2303 N/cm2, the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm2, the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm2 and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

Ultimate Heterogeneous Integration Technology for Super-Chip (슈퍼 칩 구현을 위한 헤테로집적화 기술)

  • Lee, Kang-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.4
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    • pp.1-9
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    • 2010
  • Three-dimensional (3-D) integration is an emerging technology, which vertically stacks and interconnects multiple materials, technologies, and functional components such as processor, memory, sensors, logic, analog, and power ICs into one stacked chip to form highly integrated micro-nano systems. Since CMOS device scaling has stalled, 3D integration technology allows extending Moore's law to ever high density, higher functionality, higher performance, and more diversed materials and devices to be integrated with lower cost. The potential benefits of 3D integration can vary depending on approach; increased multifunctionality, increased performance, increased data bandwidth, reduced power, small form factor, reduced packaging volume, increased yield and reliability, flexible heterogeneous integration, and reduced overall costs. It is expected that the semiconductor industry's paradiam will be shift to a new industry-fusing technology era that will offer tremendous global opportunities for expanded use of 3D based technologies in highly integrated systems. Anticipated applications start with memory, handheld devices, and high-performance computers and extend to high-density multifunctional heterogeneous integration of IT-NT-BT systems. This paper attempts to introduce new 3D integration technologies of the chip self-assembling stacking and 3D heterogeneous opto-electronics integration for realizng the super-chip.

Characteristics of 'ㄷ' type MSA Antenna for Frequency Shift (주파수 시프트용 'ㄷ'자형 MSA 안테나 특성)

  • Park, Sung-Il
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.13 no.5
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    • pp.235-238
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    • 2013
  • In this paper, ㄷ-type MSA for the QMSA structure is proposed. Transformed ㄷ-type MSA is stacked three dielectrics. ㄷ-type MSA structure was load upper & lower surface of the dielectric radiating patch and the ground turn-up left right capacity between parallel plates and radiating patch. Between the dielectric permittivity of the dielectric insert by 2.55 by varing the frequency was shifted. Designed ㄷ-type MSA sturcture of L1 was varied up to 1mm~22mm and frequency was shifted from 3.65GHz~3.84GHz. Also Designed ㄷ-type MSA was measured 1.95dBi maximum gain and bandwidth of 1.61 to 3.64%.