• Journal of Magnetics
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• 제7권3호
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• pp.94-97
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• 2002

The dependence on nickel oxide thickness and a ferromagnetic layer thickness in unidirectional and isotropic exchange-coupled NiO/NiFe(Fe) bilayer films was investigated by magnetic force microscopy to better understand the relation between magnetic domain structure and exchange biasing at microscopic length scales. As the NiO thickness increased, the domain structure of unidirectional biased films formed smaller and more complex in-plane domains. By contrast, for the isotropically coupled films, large domains generally formed with increasing NiO thickness including a cross type domain with out-of plane magnetization orientation. The density of the cross domain is proportional to exchange biasing field, and the fact that the domain mainly originated from the strongest exchange coupled region was confirmed by imaging in an applied external field during a magnetization cycle.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• 열처리공학회지
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• 제24권6호
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• pp.307-310
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• 2011

We have investigated the structural, electrical and optical properties of $In_2O_3$ thin films deposited by RF magnetron sputtering and then annealed at $150^{\circ}C$ and $300^{\circ}C$ in vacuum. The structural and electrical properties are strongly related to annealing temperature. All the annealed $In_2O_3$ films are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at $300^{\circ}C$. The sheet resistance decreases with a increase in annealing temperature and $In_2O_3$ film annealed at $300^{\circ}C$ shows the lowest sheet resistance of $174{\Omega}/{\Box}$. The optical transmittance of $In_2O_3$ films in a visible wavelength region also depends on the annealing temperature. The films annealed at $300^{\circ}C$ show higher transmittance of 76% than those of the films prepared in this study.

• 한국콘텐츠학회논문지
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• 제11권3호
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• pp.167-178
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• 2011

본 연구는 3D 입체 영화의 만족에 영향을 미치는 요인들에 대한 탐색적 연구이다. 본 연구 방법은 기존 선행연구를 바탕으로 3D 입체 영화에 영향을 미치는 요인들로 인물, 스토리, 대사, 음악, 3D 기술적 요인을 도출하고 이러한 요인들이 3D 입체 영화의 만족에 어떠한 영향을 미치는 지에 대하여 분석해보고자 하였다. 또한 영화에 대한 관여도에 따라 3D 입체 영화의 만족에 어떠한 요인이 영향을 미치는지에 대하여 연구해 보고자 하였다. 이에 본 연구의 결과는 크게 다음과 같이 요약된다. 첫째, 3D 입체 영화의 만족에 높은 영향을 주는 영화의 속성은 스토리와 3D 기술적 요인으로 나타났다. 둘째, 영화의 관여도에 따라 3D 입체 영화의 만족에 영향을 주는 요인을 분석해 본 결과 저관여 집단에게서 3D 입체 기술적 요인이 높은 상관관계를 나타냈다. 반면 고관여 집단에서는 3D 입체 기술적 요인과 스토리가 영화의 만족도에 높은 영향을 나타냈다. 이러한 연구결과는 향후 3D 입체 영화에 대한 연구에 있어 변수의 선정에 유용한 시사점을 제공해 줄 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• 한국재료학회지
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• 제14권10호
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• pp.707-712
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• 2004

$BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for hetero-epitaxially grown $BiFeO_3$ thin films comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

• Progress in Superconductivity
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• 제11권1호
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• pp.62-66
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• 2009

Introduction of proper impurity into $YBa_2Cu_3O_{7-x}$ (YBCO) thin films is an effective way to enhance its flux-pinning properties. We investigate effect of $Y_2O_3$ nanoparticles on the critical current density $J_c$ of the YBCO thin films. The $Y_2O_3$ nanoparticles were created perpendicular to the film surface (parallel with the c-axis) either between YBCO and substrate or on top of YBCO, YBCO/$Y_2O_3$/LAO or $Y_2O_3$/YBCO/STO, by pulsed laser deposition. The deposition temperature of the YBCO films were varied ($780^{\circ}C$ and $800^{\circ}C$) to modify surface morphology of the YBCO films. Surface morphology characterization revealed that the lower deposition temperature of $780^{\circ}C$ created nano-sized holes on the YBCO film surface which may behave as intrinsic pinning centers, while the higher deposition temperature produced much denser and smoother surface. $J_c$ values of the YBCO films with $Y_2O_3$ particles were either remained nearly the same or decreased for the samples in which YBCO is grown at $780^{\circ}C$. On the other hand, $J_c$ values were enhanced for the samples in which YBCO is grown at higher temperature of $800^{\circ}C$. The difference in the effect of $Y_2O_3$ can be explained by the fact that the higher deposition temperature of $800^{\circ}C$ reduces intrinsic pinning centers and $J_c$ is enhanced by introduction of artificial pinning centers in the form of $Y_2O_3$ nanoparticles.

• 한국표면공학회지
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• 제56권3호
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• pp.201-207
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• 2023

Eu³⁺-doped SnO² (SnO²:Eu³⁺) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO₂ and Eu₂Sn₂O₇. The 880 nmthick SnO²:Eu³⁺ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO²:Eu³⁺ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O^2--Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO²:Eu³⁺ thin films showed a main emission peak at 592 nm arising from the ⁵D₀→⁷F₁ transition and a weak 615 nm red band originating from the ⁵D₀→⁷F₂ transition of Eu³⁺. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500-1100 nm. These results indicate that the luminescent intensity of SnO²:Eu³⁺ thin films can be controlled by changing the deposition temperature.

• 한국정보통신학회논문지
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• 제21권5호
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• pp.991-1002
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• 2017

현재 극장이나 TV에서 상영되고 있는 애니메이션은 대부분 3D 애니메이션이다. 국내의 애니메이션 또한 많은 수가 3D로 제작되고 있으며, 이러한 3D 애니메이션 제작 업체 수는 매년 증가하고 있다. 또한 많은 애니메이션 관련 인력들이 국내 제작업체에서 다양한 국내외 애니메이션을 제작하고 있다. 이러한 애니메이션 산업에서 제작 인력의 중요성은 날로 높아지고 있다. 그 결과 국내 많은 대학에서는 3D 애니메이션 제작 전문 인력 양성에 노력하고 있다. 본 논문은 국내 3D 애니메이션 교육과정에 대하여 다룬다. 특히 현재 국내 3D 애니메이션 제작자들이 참여한 설문지를 바탕으로 이를 분석한 뒤, 대학에서 창의적인 3D 애니메이션 제작 인력양성에 대하여 논의하고자 한다. 이는 대학에서의 3D 애니메이션 교육이 올바른 3D 애니메이션 제작 인력을 양성하고 이러한 인력이 향후 국내의 3D 애니메이션 산업 발전에 기여하는 방향을 제시하는데 그 목적을 둔다.

• Applied Science and Convergence Technology
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• 제26권2호
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• pp.26-29
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• 2017

Thin films of europium-doped yttrium oxide ($Y_2O_3$:Eu) were prepared on Si (100) substrates by using a radio frequency (RF) magnetron sputtering. After the deposition, the films were annealed at $1000^{\circ}C$ in an air ambient for 1 hour. X-ray diffraction analysis revealed that the $Y_2O_3$:Eu films had a polycrystalline cubic ${\alpha}-Y_2O_3$ structure. The as-deposited films showed no photoluminescence (PL), which was due to poor crystalline quality of the films. The crystallinity of the $Y_2O_3$:Eu films was significantly improved by annealing. The strong red PL emission was observed from the annealed $Y_2O_3$:Eu films and the highest intensity peak was centered at around 613 nm. This emission peak originated from the $^5D_0{\rightarrow}^7F_2$ transition of the trivalent Eu ions occupying the $C_2$ sites in the cubic ${\alpha}-Y_2O_3$ lattice. The broad PL excitation band was observed at wavelengths below 280 nm, which was attributed to the charge transfer transition of the trivalent Eu ion.