• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.493-496
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• 1997

We have made disperse diazo black D(DB-D) ultrathin films using Langmur-Blodgett(LB) and vacuum-evaporation technique. Physical and electrical properties of the films were investigated. Solution was made with a concentration of 10$^{-3}$ mol/$\ell$ using chloroform. Moving wall apparatus (NL-LB140 S-MWC) was employed to make the LB films. X,Y and Z-type LB films were manufactured and studied by UV/visible absorbance spectra and morphology of surface using atomic force microscopy. Vacuum-evaporated DB-D think films were made at a pressure of 10$^{-5}$ torrr. The absorption peaks appear at 200 and 40nm in the LB films and vacuum-deposited films. And we have studied photoluminescence spectrum of the DB-D films. Also TGA and DSC properties of the DB-D have been observed and current -voltage characteristics of the DB-D LB films have been measured along the perpendicular direction.

• 한국콘텐츠학회논문지
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• 제12권3호
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• pp.17-24
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• 2012

앙드레 바쟁은 영화의 프레임을 두고 '세상을 향해 열린 창'이라고 표현하였는데 3D 입체 영화를 통해 이 말은 더 현실로 다가왔다. 2009년 아바타(Avatar) 의 개봉을 기점으로 입체 영화는 새로운 전환점을 맞이했다. 이제 입체 영화에 대한 이론과 정보는 넘쳐난다. 지금 우리에게 필요한 것은 제작 현장에 맞는 작업 방식을 찾아내고, 필요한 데이터를 축적하는 것이다. 완성도 있는 영화를 위한 작업 방식에도 여러 가지가 있다. 어떤 방식이든 안정감 있는 영화를 만들기 위해서는 먼저 점검해야 할 사항들이 있다. 이 논문은 '놀이동산에 또 놀러 와요, 엄마'를 중심으로 제작 과정에서 고려해야 할 사항들을 살펴보고, 작품을 통해 취득한 기술적인 문제들을 공유하고자 한다. 입체 영화에 대한 노하우가 부족한 시점에서 본 연구의 기초 자료들이 제작기술을 축적하는데 좋은 참고가 되길 바란다.

• 한국콘텐츠학회논문지
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• 제11권2호
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• pp.229-237
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• 2011

3D 입체영화의 성공사례가 지속되면서 전세계적으로 관련 기술과 산업적 가치에 대한 관심이 급증하고 있다. 그러나 <아바타>의 성공 이후 많은 영화들 이 무분별하게 3D 입체영화로 제작되면서, 미흡한 스토리텔링과 연출로 인해 영화의 완성도가 떨어졌다는 비판을 받았다. 3D 입체영화는 기존의 영화와는 다른 제작상의 특징들을 기획 단계부터 철저히 고려하여 제작하여야 한다. 본고에서는 3D 입체영화에 적합한 연출에 중점을 두고 크게 시간적 요소, 공간감을 살리는 화면연출, 시점으로 나누어 적합한 연출방법에 대해 분석하였다. 향후 전세계적으로 3D 입체콘텐츠의 수요가 늘어날 것이며, 우리나라 역시 이러한 시장의 변화에 주목하여, 양질의 콘텐츠를 제작하여 3D 입체영상 콘텐츠시장에서 우위를 점할 수 있는 계기를 만들어야할 것이다.

• Journal of Magnetics
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• 제17권4호
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• pp.265-270
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• 2012

We report improved low-field magnetoresistance (LFMR) effects of the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3-Mn_3O_4$ composite films with the nominal composition of $La_{0.7}Sr_{0.3}MnO_3$(LSMO)-50 mol% $Mn_3O_4$. The composite films were fabricated by ex-situ solid phase crystallization (SPC) of amorphous films at the annealing temperature region of $900-1100^{\circ}C$ for 2 h in a pure oxygen atmosphere. The amorphous films were deposited on polycrystalline $BaZrO_3$ (poly-BZO) substrates by dc-magnetron sputtering at room temperature. The Curie temperatures ($T_C$) of all composite films were insignificantly altered in the range of 368-372 K. The highest LFMR value of 1.29 % in 0.5 kOe with the maximum dMR/dH value of $37.4%kOe^{-1}$ at 300 K was obtained from 900 nm-thick composite film annealed at $1100^{\circ}C$. The improved LFMR properties of the composite films are attributed to effective spin-dependent scattering at the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3$ grain boundaries sharpened by adjacent chemically compatible $Mn_3O_4$ grains.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1333-1335
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• 1997

We have made disperse diazo black D(DBD) thin films using Langmuir-Blodgett(LB) and vacuum-evaporation technique. Physical and optical properties of the films were investigated. Solution was made with a concentration of $10^{-3}mol/{\ell}$ using chloroform. Moving wall apparatus, (NL-LB140S-MWC) was employed to make the LB films. X,Y and Z-type LB films were manufactured and studied UV/visible absorbance spectra and morphology of surface using atomic force microscopy(AFM). Vacuum-evaporated DB D thin films were made at a pressure of $10^{-5}$ torr. The absorption peaks were observed at 200 and 400 nm in the LB films and vacuum-deposited films. We have also studied photoluminescence spectrum of the DBD films.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.112-117
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• 2004

$Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$(x=0.0, 0.3, 0.6, 1.0, 1.4) luminescent thin films have been grown on Si (100) substrates using pulsed laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, the surface morphology and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ films grown under optimized conditions have indicated that Si (100) is one of promised substrates for the growth of high quality $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ thin film red phosphor. In particular, the incorporation of Gd into $Y_2$ $O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with $Y_{1.35}$G $d_{0.60}$ $O_3$: $E^{3+}$, whose brightness was increased by a factor of 1.95 in comparison with that of $Y_2$ $O_3$:E $u^{3+}$ films.3+/ films.films.lms.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.916-919
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• 2000

A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement of both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$3l/, of ferroelectric thin films and also thick films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been designed to acquire the piezoelectric coefficients. These results have beer calibrated for both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$31/, of thin films. In the first stage of the experiments, we have obtained d$\sub$33/ of 108pC/N and d$\sub$31/ of 57pC/N for the PZT thin films.

• 한국표면공학회지
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• 제25권5호
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• pp.235-252
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.

• 한국세라믹학회지
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• 제37권7호
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• pp.686-692
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• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.

• 한국진공학회지
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• 제5권4호
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• pp.359-364
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• 1996

Pt/Ti/$SiO_2$/Si 기판 위에 r.f. 마그네트론 스퍼터링 방법으로 $300^{\circ}C$이하의 저온에서 SrTiO3 박막을 증착하였다. XRD, RBS, TEM, EPMA로 증착된 박막의 재료적 특성을 분석하였고, Al/$SrTiO_3$/Pt의 구조로 커패시터를 제작하여 전기적 특성을 분석하였다. 기판온도가 증가함에 따라 박막의 결정성과 유전율이 향상되었으나, $200^{\circ}C$이하의 기판온도에서는 Sr이 결핍된 조성을 갖게 되어 증착된 박막이 반도성을 나타내었다. 증착중에 기판에 양의 d.c. 전압을 10~30V 인가함으로써 박막의 결정성이 크게 향상되었고, 유전특성도 개선되었다. $300^{\circ}C$의 기판온도에서 20V의 d.c. bias를 인가하여 증착한 400nm 두께의 $SrTiO_3$ 박막은 <211> 우선방향성을 갖는 주상정 구조와 화학양론적인 조성을 나타내었고, 본 연구에서 가장 우수한 전기적 특성을 보였다. 100 kHz에서 유전율이 98, 유전손실이 3.4%였으며, 3V에서 누설전류는 $10^{-5}A/\textrm{cm}^2$였다.