• 제목/요약/키워드: 3D Short

검색결과 1,495건 처리시간 0.03초

Scour around spherical bodies due to long-crested and short-crested nonlinear random waves

  • Myrhaug, Dag;Ong, Muk Chen
    • Ocean Systems Engineering
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    • 제2권4호
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    • pp.257-269
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    • 2012
  • This paper provides a practical stochastic method by which the maximum equilibrium scour depth around spherical bodies exposed to long-crested (2D) and short-crested (3D) nonlinear random waves can be derived. The approach is based on assuming the waves to be a stationary narrow-band random process, adopting the Forristall (2000) wave crest height distribution representing both 2D and 3D nonlinear random waves, and using the regular wave formulas for scour and self-burial depths by Truelsen et al. (2005). An example calculation is provided.

단거리전용통신을 위한 5.8GHz대역 LNA MMIC 설계 및 구현 (The Design and implementation of a 5.8GHz band LNA MMIC for Dedicated Short Range Communication)

  • 문태정;황성범;김용규;송정근;홍창희
    • 대한전자공학회논문지SD
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    • 제40권8호
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    • pp.549-554
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    • 2003
  • 본 논문에서 단거리전용통신을 위한 차량탑재장치내의 수신단 전반부의 구성부품인 5.8GHz대역 LNA를 MMIC로 설계 및 구현하였다. 설계된 LNA는 두개의 능동소자와 매칭회로, 두개의 드레인 바이어스 회로로 구성되며, 3V의 단일공급전압에서 18mA의 소비전류로 동작한다. 중심주파수 5.8GHz에서 이득 13.4dB, NF 1.94dB, Input IP3-3dBm, S/sub 11/ - l8dB, S/sub 22/ - 13.3dB의 특성을 나타내며, 제작된 회로의 실제 크기는 1.2×0.7㎟ 이다.

The Characterizing Analysis of a Buried-Channel MOSFET based on the 3-D Numerical Simulation

  • Kim, Man-Ho;Kim, Jong-Soo
    • Journal of Electrical Engineering and Technology
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    • 제2권2호
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    • pp.267-273
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    • 2007
  • A depletion-mode MOSFET has been analyzed to evaluate its electrical behavior using a novel 3-D numerical simulation package. The characterizing analysis of the BC MOSFET was performed through short-channel narrow-channel and small-geometry effects that are investigated, in detail, in terms of the threshold voltage. The DIBL effect becomes significant for a short-channel device with a channel length of $<\;3({\mu}m)$. For narrow-channel devices the variation of the threshold voltage was sharp for $<4({\mu}m)$ due to the strong narrow-channel effect. In the case of small-geometry devices, the shift of the threshold voltage was less sensitive due to the combination of the DIBL and substrate bias effects, as compared with that observed from the short-channel and narrow-channel devices. The characterizing analysis of the narrow-channel and small-geometry devices, especially with channel width of $<\;4({\mu}m)$ and channel area of $<\;4{\times}4({\mu}m^2)$ respectively, can be accurately performed only from a 3-D numerical simulation due to their sharp variations in threshold voltages.

3D FACE RECONSTRUCTION FROM ROTATIONAL MOTION

  • Sugaya, Yoshiko;Ando, Shingo;Suzuki, Akira;Koike, Hideki
    • 한국방송∙미디어공학회:학술대회논문집
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    • 한국방송공학회 2009년도 IWAIT
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    • pp.714-718
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    • 2009
  • 3D reconstruction of a human face from an image sequence remains an important problem in computer vision. We propose a method, based on a factorization algorithm, that reconstructs a 3D face model from short image sequences exhibiting rotational motion. Factorization algorithms can recover structure and motion simultaneously from one image sequence, but they usually require that all feature points be well tracked. Under rotational motion, however, feature tracking often fails due to occlusion and frame out of features. Additionally, the paucity of images may make feature tracking more difficult or decrease reconstruction accuracy. The proposed 3D reconstruction approach can handle short image sequences exhibiting rotational motion wherein feature points are likely to be missing. We implement the proposal as a reconstruction method; it employs image sequence division and a feature tracking method that uses Active Appearance Models to avoid the failure of feature tracking. Experiments conducted on an image sequence of a human face demonstrate the effectiveness of the proposed method.

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진공 게이트 스페이서를 지니는 Bulk FinFET의 단채널효과 억제를 위한 소자구조 최적화 연구 (Device Optimization for Suppression of Short-Channel Effects in Bulk FinFET with Vacuum Gate Spacer)

  • 연지영;이광선;윤성수;연주원;배학열;박준영
    • 한국전기전자재료학회논문지
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    • 제35권6호
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    • pp.576-580
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    • 2022
  • Semiconductor devices have evolved from 2D planar FETs to 3D bulk FinFETs, with aggressive device scaling. Bulk FinFETs make it possible to suppress short-channel effects. In addition, the use of low-k dielectric materials as a vacuum gate spacer have been suggested to improve the AC characteristics of the bulk FinFET. However, although the vacuum gate spacer is effective, correlation between the vacuum gate spacer and the short-channel-effects have not yet been compared or discussed. Using a 3D TCAD simulator, this paper demonstrates how to optimize bulk FinFETs including a vacuum gate spacer and to suppress short-channel effects.

Ebb and Flow 저면관수 시스템에서 광강도와 양액농도에 따른 칼랑코에(Kalanchoe blossfeldiana 'Marlene') 생육 및 양분흡수 특성 (Growth Characteristics and Nutrient Uptake of Kalanchoe Plants (Kalanchoe blossfeldiana 'Marlene') at Different Light Intensities and Nutrient Strengths in Ebb and Flow Subirrigation Systems)

  • 노은희;전하준;손정익
    • 원예과학기술지
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    • 제29권3호
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    • pp.187-194
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    • 2011
  • 광강도와 배양액 농도에 따른 칼랑코에(Kalanchoe blossfeldiana 'Marlene')의 생육단계별 양수분 흡수율과 작물생육을 조사하였다. 광강도는 일적산 광합성유효광양자속(PPF)이 6.5, 10.3, $18.2mol{\cdot}m^{-2}{\cdot}d^{-1}$의 3수준으로, 배양액의 농도는 유묘기 EC 0.5, 1.0, 1.5, $2.0dS{\cdot}m^{-1}$의 4수준, 단일처리 후 EC 1.0, 1.5, 2.0, $3.0dS{\cdot}m^{-1}$의 4수준으로 처리하였다. 유묘기 초장은 저광 조건에서 가장 길었고, 엽면적과 건물중은 PPF $10.3mol{\cdot}m^{-2}{\cdot}d^{-1}$에서 가장 높았다. 유묘기 모든 광조건에서 EC $1.5dS{\cdot}m^{-1}$일 경우에 최대 건물중과 엽면적이 나타났다. 단일처리기 초장 역시 저광 조건에서 길었고, 엽면적, 건물 중, 분지수는 광강도가 증가함에 따라 현저하게 증가하였다. 모든 광조건에서 엽면적, 건물중, 분지수는 배양액농도가 EC 1.0-$2.0dS{\cdot}m^{-1}$까지 증가하다가 EC $3.0dS{\cdot}m^{-1}$에서 현저히 감소하였고, EC $2.0dS{\cdot}m^{-1}$에서 가장 높았다. 생육이 양호하였던 EC 처리구(유묘기 EC $1.5dS{\cdot}m^{-1}$, 단일처리기 EC $2.0dS{\cdot}m^{-1}$)의 $NO_3$-N, $H_2PO_4{^-}$, $K^+$, $Ca^{2+}$, $Mg^{2+}$ 이온간의 상호간 비율을 분석한 결과 육묘단계에서는 광강도에 따라 큰 차이가 없었지만, 단일처리기에서는 큰 차이가 확인되었다. 따라서 작물의 최적의 생장을 위해 유묘기에는 광도 별 EC 조절로 충분하지만, 단일처리기에는 광강도에 따른 배양액 조성과 EC조절이 필요하다.

3D FEM해석을 통한 배선용 차단기의 가동자 거동해석 (Dynamic Motion Analysis of a Moving Contact by Electromagnetic Repulsion Force in MCCB)

  • 송중천;김용기;유만종;서정민
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 B
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    • pp.786-789
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    • 2002
  • The behaviour of contactors protected by arcs under short-circuit currents is analysed using a simple model to represent the electric circuit and the contactor. In most cases, the protection of contactors against short-circuit currents is entrusted to fuses. Fuses are suitable for preventing excessive damage to the contactor, or parts of the contactor, under short-circuit conditions. In particular, they are capable of limiting the thermal and electrodynamic stresses which can lead to arcing or welding together of the contacts of a contactor. This paper is the Dynamic Motion Analysis of a Moving Contact by Electromagnetic Repulsion Force in Molded Case Circuit Breaker(MCCB)

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Fit and Pressure Analysis of Cycling Short Sleeve Tops Using a 3D Virtual Garment System

  • Park, Hyunjeong;Do, Wolhee
    • 한국의류산업학회지
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    • 제23권2호
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    • pp.237-246
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    • 2021
  • This study aims to analyze short sleeve cycling tops from three brands for a change in garment fit and pressure depending on the static and cycling postures. To this end, it used a 3D virtual garment system to virtualize the garments. Further, a cross-section of the 3D virtual garment data was obtained, and the space length was measured in the design-X program to prove the objectivity of the 3D virtual garment. The results indicated that three brands had a large space length at the front than the back because of the bent posture in cycling. Therefore, appropriate ease was required for the waist and abdomen. Although there were various cutting lines of the bodice panel by brand, the design of the cutting lines should consider the changes in the surface to reflect the bent posture in cycling. The results of this experiment confirmed that the wrinkles present in the 3D virtual garment were reflected in the cross-section and that the space length was small in the high-stress area, as shown in red. Therefore, it was proven the stress of the 3D virtual garment could be used for 3D virtual garment evaluation.

Short channel 비휘발성 SNOSFET 기억소자의 제작과 특성 (Fabrication and characteristics of short channel nonvolatile SNOSFET memory devices)

  • 강창수
    • E2M - 전기 전자와 첨단 소재
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    • 제4권3호
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    • pp.259-266
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    • 1991
  • 1.5.mu.m의 찬넬길이를 갖는 short channel 비휘발성 SNOSFET 기억소자를 기존의 CMOS 1 Mbit 공정기술을 이용하여 제작하고 I$_{d}$-V$_{d}$ 및 I$_{d}$- V$_{g}$특성과 스윗칭 및 기억유지특성을 조사하였다. 그 결과 제작한 소자는 논리회로 설계에 적절한 전도특성을 가졌으며 스윗칭시간은 인가전압의 크기에 의존함을 보였다. 그리고 3V의 memory window 크기를 얻기 위해서 V$_{w}$ =+34V, t$_{w}$ =50.mu.sec 및 V$_{e}$=-34V, t$_{e}$=500.mu.sec의 펄스전압으로 각각 write-in과 erase할 수 있었다. 또한 기억상태는 10년이상 유지할 수 있음을 알 수 있었다.

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단주기 광섬유 격자(Fiber Grating)와 장주기 광섬유 격자의 온도 의존성 비교 (Comparison of temperature dependance between short and long period fiber gratings)

  • 최보훈
    • 한국정보통신학회논문지
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    • 제15권8호
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    • pp.1791-1796
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    • 2011
  • 가우스 광분포를 가지는 KrF 엑시머 레이저와 위상마스크를 이용해 3dB 파장 선폭이 0.7 nm인 단주기 광섬유 격자(Fiber Bragg Grating)가 제작되었고, 이 격자의 파장에 따른 삽입 손실이 단일파장 광원과 cutback방식을 이용해 측정되었다. 이 격자의 온도 의존성을 확인하기 위해 -10 $^{\circ}C$ ~ 70 $^{\circ}C$ 범위에서 중심 파장의 변화를 측정하였는데 0.01 nm/$^{\circ}C$을 얻었으며 이 값은 온도 변화 방향과 무관하였다. 진폭마스크를 이용해 3 dB 선폭이 14.22 nm인 장주기 격자도 제작되었으며 이 경우는 같은 온도 범위에서 0.044 nm/$^{\circ}C$로 단주기 격자에 비해 온도 의존성이 4배 이상 컸다. 장주기 격자는 광섬유 코팅의 존재 여부도 온도 변화에 큰 영향을 미쳤다.