• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2004.04a
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• pp.149-152
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• 2004

Generally the wafer is increased by 300mm. We are desired that the wafer is prevented from pollutions of metal contaminant on surface of wafer. We have to develop new wafer cleaning process of IC Manufacturing that can reduce DI water and chemical by removal of the wafer cleaning process step. Moreover, it is difficult to control temprature and density of chemical in spite of rapidly increasing automation of system. We design smart module controller for new generation of semiconductor wet station with intelligent algorithm using data that is taken by computer simulation for optimal system.

• Proceedings of the Korea Information Processing Society Conference
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• 2000.10a
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• pp.703-706
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• 2000

반도체 제조 공정의 효율적인 제어와 감시를 위한 모니터링 시스템을 구성하기 위해서는 장비가 가진 특성과 시스템 환경에서 요구되는 조건들과 동작 상태 둥을 사용자 인터페이스를 통하여 한 눈에 감시할 수 있는 화면 레이아웃이 요구된다. 본 논문에서는 차세대 반도체 장비인 300mm 웨이퍼 가공용 Spinner 의 MMI 개발을 목표로 하여 장비의 구성 요소들의 선택적 접속에 따라서 사용자 인터페이스용 레이아웃을 능동적으로 설계하는 방법에 대하여 기술하였다. 장비를 구성하는 기본 요소들간의 관계를 정의하고, 장비의 사양과 웨이퍼의 가공 목적에 따라 구성 요소들을 자동으로 유연성있게 배치하도록 하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.272-278
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• 2013

In this study, a c-axis displacement and an internal stress of the sapphire crystal of 300 mm length have been analyzed numerically and the crystal length having no sub-grain defects have been predicted. The hot zone structures were modified with the crucible geometry change and the additional insulation layer installed above the crucible. The simulation results show that the c-axis displacement difference between the original hot zone and others originated from the sub-grain defect formations in the sapphire ingot. When the crystal grown by CZ (Czochralski) grower using the modified hot zone, the crystal length having no sub-grain defects was increased about 57 mm maximum than the original one. When the simulation results compared with the experimental one, the predicted crystal length having no sub-grain defects were well corresponded with the experiment one in c-axis wafer of the 300 mm sapphire ingot. Therefore the sapphire crystal of 250 mm length having no sub-grain defects was successfully grown by CZ process.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.25 no.2
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• pp.202-210
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• 2015

Objectives: The purpose of this study was to examine clean room(C/R) structure, air conditioning and contamination control systems and to provide basic information for identifying a correlation between the semiconductor work environment and workers' disease. Methods: This study was conducted at 200 mm and 300 mm semiconductor wafer fabrication facilities. The C/R structure and air conditioning method were investigated using basic engineering data from documentation for C/R construction. Furthermore, contamination parameters such as airborne particles, temperature, humidity, acids, ammonia, organic compounds, and vibration in the C/R were based on the International Technology Roadmap for Semiconductors(ITRS). The properties of contamination control systems and the current status of monitoring of various contaminants in the C/R were investigated. Results: 200 mm and 300 mm wafer fabrication facilities were divided into fab(C/R) and sub fab(Plenum), and fab, clean sub fab and facility sub fab, respectively. Fresh air(FA) is supplied in the plenum or clean sub fab by the outdoor air handling unit system which purifies outdoor air. FA supply or contaminated indoor air ventilation rates in the 200 mm and 300 mm wafer fabrication facilities are approximately 10-25%. Furthermore, semiconductor clean rooms strictly controlled airborne particles(${\leq}1,000{\sharp}/ft^3$), temperature($23{\pm}0.5^{\circ}C$), humidity($45{\pm}5%$), air velocity(0.4 m/s), air change(60-80 cycles/hr), vibration(${\leq}1cm/s^2$), and differential pressure(atmospheric pressure$+1.0-2.5mmH_2O$) through air handling and contamination control systems. In addition, acids, alkali and ozone are managed at less than internal criteria by chemical filters. Conclusions: Semiconductor clean rooms can be a pleasant environment for workers as well as semiconductor devices. However, based on the precautionary principle, it may be necessary to continuously improve semiconductor processes and the work environment.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.15-21
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• 2011

In this study, flexural strength and fracture behavior of silicon die from single crystalline silicon wafer were investigated as a function of thickness. Silicon wafers with various thickness of 300, 200, 180, 160, 150, and 100 ${\mu}m$ were prepared by mechanical grinding and polishing of as-saw wafers. Flexural strength of 40 silicon dies (size: 62.5 mm${\times}$4 mm) from each wafer was measured by four point bending test, respectively. For statistical analysis of flexural strength, shape factor(i.e., Weibull modulus) and scale factor were determined from Weibull plot. Flexural strength reflecting both statistical fracture probability and size (thickness) effect of brittle silicon die was obtained as a linear function of die thickness. Fracture appearance was discussed in relation with measured fracture strength.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.33 no.3
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• pp.184-191
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• 2010

In the environment of 450mm wafers production known as the next-generation semiconductor production process, one of the most significant features is the full automation over the whole manufacturing processes involved. The full automation system for 450mm wafer production will minimize the human workers' involvement in the manufacturing process as much as possible. In addition, since the importance of an individual wafer processing increases noticeably, it is necessary to develop more robust scheduling systems in the whole manufacturing process than so ever. The scheduling systems for the next-generation semiconductor production processes also should be capable of monitoring individual wafers and collecting useful data on them in real time. Based on the information gathered from these processes, the system should finally have a real-time scheduling functions controlling whole the semiconductor manufacturing processes. In this study, preliminary investigations on the requirements and needed functions for constructing the real time scheduling system and transforming manufacturing environments for 300mm wafers to those of 400mm are conducted and through which the next generation semiconductor processes for efficient scheduling in a clustered production system architecture of the scheduler is proposed. Our scheduling architecture is composed of the modules for real-time scheduling, the clustered production type supporting, the optimal scheduling and so on. The specifications of modules to define the major required functions, capabilities, and the relationship between them are presented.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.708-714
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• 2016

In today's semiconductor industry, manufacturing technology is being developed for the purpose of processing large amounts of data and improving the speed of data processing. The packaging process in semiconductor manufacturing is utilized for the purpose of protecting the chips from the external environment and supplying electric power between the terminals. Nowadays, the WLP (Wafer-Level Packaging) process is mainly used in semiconductor manufacturing because of its high productivity. All of the silicon dies on the wafer are subjected to a high pressure and temperature during the molding process, so that die shift and warpage inevitably occur. This phenomenon deteriorates the positioning accuracy in the subsequent re-distribution layer (RDL) process. In this study, in order to minimize the die shift, a vision inspection system is developed to collect the die shift measurement data.

• Journal of the Korean institute of surface engineering
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• v.46 no.6
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• pp.283-289
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• 2013

The experimental study for the temperature uniformity on the wafer using liquid-vapor phase heat transfer mechanism is performed. For the experiment, the heater plate which is consist of stainless steel container, working fluid and electrical heater is designed, manufactured and tested at the range of 600 to $850^{\circ}C$. The results showed that the phase change type heater plate was much more uniform and stable temperature on the heater plate surface and wafer than the uniform heat flux type heater plate at the atmospheric condition. Also, the results of 300 mm outer diameter of heater plate showed that the same temperature uniformity compared with 230 mm.

• International Journal of Precision Engineering and Manufacturing
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• v.9 no.1
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• pp.25-29
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• 2008

We introduce a new fabrication process for antireflective structured surfaces. A 4-inch silicon wafer was dipped in a suspension of 300-nm-diameter silica particles dispersed in a toluene solution. When the wafer was drawn out of the suspension, a hexagonally packed monolayer structure of particles self-assembled on almost the complete wafer surface. Due to the simple process, this could be applied to micro- and nano-patterning. The self-assembled silica particles worked as a mask for the subsequent reactive ion etching. An array of nanometer-sized pits could be fabricated since the regions that correspond to the small gaps between particles were selectively etched off. As etching progressed, the pits became deeper and combined with neighboring pits due to side-etching to produce an array of cone-like structures. We investigated the effect of etching conditions on antireflection properties, and the optimum shape was a nano-cone with height and spacing of 500 nm and 300 nm, respectively. This nano-structured surface was prepared on a $30\;{\times}\;10-mm$ area. The reflectivity of the surface was reduced 97% for wavelengths in the range 400-700 nm.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.174-178
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• 2007

The cleaning process to remove small particles, ions, and other polluted sources is one of the major parts in the recent semiconductor industry because it can cause fatal errors on the quality of the final products. According to the other reports, the major factors of bath's fluid motion are the cleaning method, nozzle, the geometry (of bath, guide and wafer), and the position (of guide and wafer). So to enhance cleaning efficiency in the bath, these factors must be controlled. The purpose of this study is to analyze and visualize fluid motion in the cleaning bath as basic data for designing the nozzle system and finding the process control parameters. For that, we used the general CFD code FLUENT.