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Development and Animal Tests of Prototype Oxygen Concentrator (국산 산소 농축기의 개발 및 동물실험)

  • 변정욱;성숙환;이태수
    • Journal of Chest Surgery
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    • v.31 no.7
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    • pp.643-649
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    • 1998
  • Background: For the patient with chronic obstructive pulmonary disease requiring long-term oxygen therapy, oxygen concentrator machines are already widely available for use in home. In this study, we used mongrel dogs as test subjects to compare the functional efficiency and safety of the oxygen concentrator developed by our own research team with those of the imported FORLIFE(TM) machine made by AIRSEP Corp. Method and method: To test mechanical reliability, the concentrations of oxygen delivered were measured after 4 hours of continuous operation. Sixteen mongrel dogs were divided into two equal groups. Mongrel dogs in group A were given oxygen using the imported oxygen concentrator, and those in group B using the machine developed. 5 l/min of oxygen were given, after which vital signs were analyzed, arterial blood gases measured, and blood chemistry tests carried out. Results: After 4 hours of continuous operation, the imported model performed better, giving 98${\pm}$3% oxygen, compared to our model, which gave 91${\pm}$1%. In the animal experiments, oxygen concentrations were measured at the inlet of face mask 1, 2, 3, and 4 hours after continuous administration, and there was no statistically significant difference(repeated measures of analysis of variance p=0.70) between the values of 70.6${\pm}$2.5%, 67.1${\pm}$2.9%, 68.2${\pm}$2.6%, and 64.9${\pm}$3.9% that were measured from group A, and the values of 65.1${\pm}$4.8%, 65.2${\pm}$3.6%, 68.7${\pm}$4.3%, and 66.0${\pm}$5.0% measured from group B. Before oxygen administration, and at 1, 2, 3, and 4 hours after oxygen administration, arterial blood partial pressure of oxygen 87.2${\pm}$2.5 mmHg, 347.4${\pm}$29.3 mmHg, 353.4${\pm}$21.2 mmHg, 343.0${\pm}$28.8 mmHg, and 321.6${\pm}$24.4 mmHg, respectively, were read from group A, which were not statistically different (p=0.24) to the values of 102.5${\pm}$9.6 mmHg, 300.3${\pm}$17.1 mmHg, 321.6${\pm}$23.7 mmHg, 303.4${\pm}$27.4 mmHg, and 273.5${\pm}$25.9 mmHg read from group B. Nonetheless, the arterial blood partial pressure of oxygen values appear to be somewhat higher in dogs that were given oxygen using the imported oxygen concentrator. Conclusions: From these results the prototype oxygen concentrator developed appears to function relatively satisfactorily compared to the imported, established model, but may be criticized for the excessive noise generated and poor long-term endurance or consistency, which need improvement.

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Effects of Surface Finishes on the Low Cycle Fatigue Characteristics of Sn-based Pb-free Solder Joints (금속패드가 Sn계 무연솔더의 저주기 피로저항성에 미치는 영향)

  • Lee, Kyu-O;Yoo, Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.3
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    • pp.19-27
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    • 2003
  • Surface finishes of PCB laminates are important in the solder joint reliability of flip chip package because the types and thicknesses of intermetallic compound(IMC), and compositions and hardness of solders are affected by them. In this study, effects of surface finishes of PCB on the low cycle fatigue resistance of Sn-based lead-free solders; Sn-3.5Ag, Sn-3.5Ag-XCu(X=0.75, 1.5), Sn-3.5Ag-XBi(X=2.5, 7.5) and Sn-0.7Cu were investigated for the Cu and Au/Ni surface finish treatments. Displacement controlled room temperature lap shear fatigue tests showed that fatigue resistance of Sn-3.5Ag-XCu(X=0.75, 1.5), Sn-3.5Ag and Sn-0.7Cu alloys were more or less the same each other but much better than that of Bi containing alloys regardless of the surface finish layer used. In general, solder joints on the Au/Ni finish showed better fatigue resistance than those on the Cu finish. Cross-sectional fractography revealed microcracks nucleation inside of the interfacial IMC near the solder mask edge, more frequently on the Cu than the Au/Ni surface finish. Macro cracks followed the solder/IMC interface in the Bi containing alloys, while they propagated in the solder matrix in other alloys. It was ascribed to the Bi segregation at the solder/IMC interface and the solid solution hardening effect of Bi in the $\beta-Sn$ matrix.

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A Study on Estimating Rice Yield in DPRK Using MODIS NDVI and Rainfall Data (MODIS NDVI와 강수량 자료를 이용한 북한의 벼 수량 추정 연구)

  • Hong, Suk Young;Na, Sang-Il;Lee, Kyung-Do;Kim, Yong-Seok;Baek, Shin-Chul
    • Korean Journal of Remote Sensing
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    • v.31 no.5
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    • pp.441-448
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    • 2015
  • Lack of agricultural information for food supply and demand in Democratic People's republic Korea(DPRK) make people sometimes confused for right and timely decision for policy support. We carried out a study to estimate paddy rice yield in DPRK using MODIS NDVI reflecting rice growth and climate data. Mean of MODIS $NDVI_{max}$ in paddy rice over the country acquired and processed from 2002 to 2014 and accumulated rainfall collected from 27 weather stations in September from 2002 to 2014 were used to estimated paddy rice yield in DPRK. Coefficient of determination of the multiple regression model was 0.44 and Root Mean Square Error(RMSE) was 0.27 ton/ha. Two-way analysis of variance resulted in 3.0983 of F ratio and 0.1008 of p value. Estimated milled rice yield showed the lowest value as 2.71 ton/ha in 2007, which was consistent with RDA rice yield statistics and the highest value as 3.54 ton/ha in 2006, which was not consistent with the statistics. Scatter plot of estimated rice yield and the rice yield statistics implied that estimated rice yield was higher when the rice yield statistics was less than 3.3 ton/ha and lower when the rice yield statistics was greater than 3.3 ton/ha. Limitation of rice yield model was due to lower quality of climate and statistics data, possible cloud contamination of time-series NDVI data, and crop mask for rice paddy, and coarse spatial resolution of MODIS satellite data. Selection of representative areas for paddy rice consisting of homogeneous pixels and utilization of satellite-based weather information can improve the input parameters for rice yield model in DPRK in the future.

No-reference objective quality assessment of image using blur and blocking metric (블러링과 블록킹 수치를 이용한 영상의 무기준법 객관적 화질 평가)

  • Jeong, Tae-Uk;Kim, Young-Hie;Lee, Chul-Hee
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.46 no.3
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    • pp.96-104
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    • 2009
  • In this paper, we propose a no-reference objective Quality assessment metrics of image. The blockiness and blurring of edge areas which are sensitive to the human visual system are modeled as step functions. Blocking and blur metrics are obtained by estimating local visibility of blockiness and edge width, For the blocking metric, horizontal and vertical blocking lines are first determined by accumulating weighted differences of adjacent pixels and then the local visibility of blockiness at the intersection of blocking lines is obtained from the total difference of amplitudes of the 2-D step function which is modelled as a blocking region. The blurred input image is first re-blurred by a Gaussian blur kernel and an edge mask image is generated. In edge blocks, the local edge width is calculated from four directional projections (horizontal, vertical and two diagonal directions) using local extrema positions. In addition, the kurtosis and SSIM are used to compute the blur metric. The final no-reference objective metric is computed after those values are combined using an appropriate function. Experimental results show that the proposed objective metrics are highly correlated to the subjective data.

Selective growth of GaN nanorods on the top of GaN stripes (GaN stripe 꼭지점 위의 GaN 나노로드의 선택적 성장)

  • Yu, Yeonsu;Lee, Junhyeong;Ahn, Hyungsoo;Shin, Kisam;He, Yincheng;Yang, Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.4
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    • pp.145-150
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    • 2014
  • GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. $SiO_2$ mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selective growth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods was followed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorods depend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shape which have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocations were rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faults which might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorods were observed in the center area of the GaN nanorods.

Flexible Optical Waveguide Film with Embedded Mirrors for Short-distance Optical Interconnection (근거리 광연결용 미러 내장형 연성 광도파로 필름)

  • An, Jong Bae;Lee, Woo-Jin;Hwang, Sung Hwan;Kim, Gye Won;Kim, Myoung Jin;Jung, Eun Joo;Rho, Byung Sup
    • Korean Journal of Optics and Photonics
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    • v.23 no.1
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    • pp.12-16
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    • 2012
  • In the paper, we fabricated a Ni master with $45^{\circ}$-mirror structures for flexible waveguide fabrication. The flexible waveguide films with embedded $45^{\circ}$-angled mirrors at the waveguide ends were successfully fabricated using a UV-imprint process. Next, in order to enhance the reflectivity of the mirrors, Ni(3 nm)-Au(200 nm) bilayers were evaporated on the $45^{\circ}$-angled facets through a locally opened thin mask using an electron beam evaporator. We measured propagation loss, bending loss, mirror loss and bending reliability of the fabricated waveguide.

InGaZnO active layer 두께에 따른 thin-film transistor 전기적인 영향

  • U, Chang-Ho;Kim, Yeong-Lee;An, Cheol-Hyeon;Kim, Dong-Chan;Gong, Bo-Hyeon;Bae, Yeong-Suk;Seo, Dong-Gyu;Jo, Hyeong-Gyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.5-5
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    • 2009
  • Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

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Effects of thickness of GIZO active layer on device performance in oxide thin-film-transistors

  • Woo, C.H.;Jang, G.J.;Kim, Y.H.;Kong, B.H.;Cho, H.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.137-137
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    • 2009
  • Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

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The Relative Effects of Individual vs. Group Monetary Incentive Systems with and without Feedback on Work Performance (상이한 성과급 분배 방식과 피드백 제공 여부가 근로자의 수행에 미치는 상대적 효과 비교)

  • Cho, Hang-Soo;Lee, Kye-Hoon;Moon, Kwang-Su;Oah, She-Zeen
    • The Journal of the Korea Contents Association
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    • v.17 no.3
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    • pp.359-369
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    • 2017
  • The purpose of this study was to examine whether the effect of feedback would mask the performance differences that would result from different incentive pay distribution. Five critical service behaviors were identified and measured daily at a gas station located in Seoul. Participants were 5 employees working at the gas station. Independent variables were the types of incentive distribution and feedback. After baseline (A), equally-distributed group incentive condition (B) was introduced, and individual incentive condition (C) was introduced in the next phase. Then, after the withdrawal condition (A'), equally-distributed group incentive with feedback condition (B') was introduced and finally, the individual incentive with feedback condition (C') was introduced. The results suggested that all employees showed higher work performance under individual incentive than equally-distributed group incentive system when feedback were not delivered. However, there was no difference in work performance between two incentive conditions in the phases in which feedback were delivered. These findings suggest that feedback can reduce performance differences between equally-distributed group incentives and individual incentives.

The spatial-effect profile of visual attention in perception and memory (지각과 단기 기억 수준에 발현되는 주의 효과의 공간적 연장 패턴 비교)

  • Hyun, Joo-Seok
    • Korean Journal of Cognitive Science
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    • v.19 no.3
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    • pp.311-330
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    • 2008
  • The effect of spatial attention gradually decreases as a function of the distance between the locus of attention and a target. According to this hypothesis, we tested the spatial-effect profile of visual attention when it operates on perception and memory. Experiment 1 measured accuracy of discriminating the color of a simultaneously masked target after presenting a pre-cue to either at the target location or away from the target (perception-intensive task). Experiment 2 measured accuracy of recognizing the color of several items at and around the pre-cued location (memory-intensive task). In the perception-intensive condition, the accuracy gradually dropped as the distance between the cue and target location increases. However, in the memory-intensive condition, subjects remembered only the item at the cued location. This suggests spatial attention in a memory-intensive process would operate on object-based representations. Experiment 2 showed the object-based effect observed in Experiment 1 can be also present in perception under a special circumstance. The results indicate that spatial attention can operate on object-based representations in a memory-intensive process whereas it flexibly can operate either on location-based or object-based representations in a perception-intensive process.

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