• Korean Journal of Computational Design and Engineering
• /
• v.11 no.6
• /
• pp.447-454
• /
• 2006

Although there are many needs to use 3D models in MEMS field, it is not easy to generate 3D models based on MEMS CAD. This is because MEMS CAD is based on 2D and their popular format-GDSII file format- has its own limits and problems. The differences between GDSII file format and 3D CAD system, such as (1) superposed modeling, (2) duplicated entity, (3) restricted of entity type, give rise to several problems in data exchange. These limits and problems in GDSII file format have prevented 3D CAD system from generating 3D models from the MEMS CAD. To remove these limits and solve problems, it is important to extract the silhouette of data in the MEMS CAD. The proposed method has two main processes to extract silhouette; one is to extract the pseudo-silhouette from the original 2D MEMS data and the other is to remove useless objects to complete the silhouette. The paper reports on the experience gained in data exchange between 2D MEMS data and 3D models by the proposed method and a case study is presented, which employs the proposed method using MEMS CAD IntelliMask and Solidworks.

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.12
• /
• pp.22-29
• /
• 2001

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1914-1917
• /
• 2001

3D Feed Horn Shape MEMS Antenna Array는 적외선 이미지 소자 또는 Tera hertz band 등에서 많은 응용을 할 수 있는 장점을 가진 MEMS 구조체 이다. 하지만 일반적인 MEMS 공정을 이용해서 3D Feed Horn Shape MEMS antenna array를 구현하기는 적합하지 않았다. 본 논문에서는 마스크와 웨이퍼가 일체 된 형태의 경사된 척이 초 저속으로 회전하면서 노광을 할 수 있는 새로운 방식과 미러 반사구조를 이용해서 평행광을 얻을수 있는 노광장치 (MRPBI : Mirror Reflected Parallel Beam Illuminator) System제작방법을 제안하였다. 3D Feed Horn Shape MEMS Antenna의 구조적인 high apect ratio의 특성에 의해서 SU-8과 PMER Negative Photo resist를 이용한 기본적인 실험을 통해 3D 구조체의 구현 가능성을 증명하였다. 또한 Microbolometer의 성능향상을 위한 이론적인 3D MEMS Antenna Model들을 HFSS(High Frequency Structure Simulator)을 이용해서 그 최적구조를 제안하고 3D MEMS Antenna Gain 값을 비교 분석하였다.

• 한국정보통신설비학회:학술대회논문집
• /
• 2004.08a
• /
• pp.226-229
• /
• 2004

본 논문은 초고주파 영역에서 개방 단말 동축선을 대신해서 복소 유전율을 측정할 수 있는 MEMS 프로브와 그 응용예로 MEMS 프로브 어레이를 제안한다. MEMS 프로브는 기존의 동축선 프로브와 달리 커넥터와의 연결이 간단하여 일회용으로 프로브를 사용할 수 있다는 점에서 의료용으로 사용할 수 있는 가능성이 있다. 샘플의 유전율 분포를 구하기 위해서 기존의 센서는 반복 접촉을 요구하고 이로 인한 번거로움과 측정 오차를 줄일 목적으로 MEMS 프로브 어레이를 개발 하였다. MEMS 프로브 어레이는 RF 스위치를 사용하여 다수의 측정 포인트를 한번의 센서 접촉으로 측정할 수 있는 새로운 개념의 프로브이다. 1GHz부터 40GHz까지의 광대역에서 0.9% 식염수의 유전율을 측정하여 MEMS 프로브의 성능을 검증하였다.

• Journal of Positioning, Navigation, and Timing
• /
• v.3 no.2
• /
• pp.53-62
• /
• 2014

In the guided missile and unmanned vehicle system, the navigation system is one of the most important components. Recently, low-cost effective smart projectiles and guided bomb are being developed using MEMS based navigation system which has high-G, low-cost and small size. In this paper, locally developed MEMS based GPS/INS integrated navigation system will be introduced in comparison with the state of the art of MEMS based navigation system. And technical design and development method is described to satisfy the required performance of GPS receiver, MEMS inertial sensor assembly, navigation computer and software.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.1
• /
• pp.49-55
• /
• 2002

This paper presents high performance MEMS passives using fully CMOS compatible, monolithically integrable 3-D RF MEMS processes for RF and microwave applications. The 3-D RF MEMS technology has been developed and investigated as a viable technological option, which can break the limit of the conventional IC technology. We have demonstrated the versatility of the technology by fabricating various 3-D thick-metal microstructures for RF and microwave applications, such as spiral/solenoid inductors, transformers, and transmission lines, with a vertical dimension of up to $100{\;}\mu\textrm{m}$. To the best of our knowledge, we report that we are the first to construct a fully integrated VCO with MEMS inductors, which has achieved a low phase noise of -124 dBc/Hz at 300 kHz offset from a center frequency of 1 GHz.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1969-1971
• /
• 2002

This paper presents the design and performance of low pull-in voltage MEMS switches for commercial cellular/PCS applications. The switches have all-metal (3 ${\mu}m$ thick Au) movable plates over CPW(Coplanar Waveguide) transmission line. The stress gradient in a movable plate is considered in mechanical design to obtain an accurate pull-in voltage. Series metal-to-metal contact switches are fabricated and evaluated. Those switches exhibit the low loss(<0.2 dB @1.9 GHz) with good isolation(55 dB @1.9 GHz).

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.2
• /
• pp.112-117
• /
• 2008

Vertical interconnection scheme using novel silicon-through-via for 3D MEMS devices or stacked package is proposed and fabricated to demonstrate its feasibility. The suggested silicon-through-via replaces electroplated copper, which is used as an interconnecting material in conventional through-via, with doped silicon. Adoption of doped silicon instead of metal eliminates thermal-mismatch-induced stress, which can make troubles in high temperature MEMS processes, such as wafer bonding and LP-CVD(low pressure chemical vapor deposition). Two silicon layers of $30{\mu}m$ thickness are stacked on the substrate. The through-via arrays with spacing $40{\mu}m$ and $50{\mu}m$ are fabricated successfully. Electrical characteristics of the through-via are measured and analyzed. The measured resistance of the silicon-through-via is $169.9\Omega$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.7 no.3
• /
• pp.177-182
• /
• 2007

This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

• Bulletin of the Korean Space Science Society
• /
• 2009.04a
• /
• pp.64.3-64.3
• /
• 2009