• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.5
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• pp.691-699
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• 1997

The effects of concave hemispherical surface curvature on the local heat transfer from a turbulent round impinging jet were experimentally investigated. The liquid crystal transient method was used for these measurements. This method, which is a variation on the transient method, suddenly exposes a preheated wall to an impinging jet while video recording the response of liquid crystals for the measurement of the surface temperature. The Reynolds number ranges from Re=11,000 to 50,000, the nozzle-to- surface distance from L/d=2 to 10, and the surface curvature from D/d=6 to 12.The present results are also compared to those for the flat plate case. In the experiment, the local Nusselt numbers tend to increase in all regions with an increasing surface curvature. The maximum Nusselt number for all Reynolds numbers occurred at L/d .ident. 6 and a second maximum in the Nusselt number occurred at R/d .ident. 2 for both Re=23,000 and Re=50,000 in the case of L/d=2 and for Re=50,000 only in the case of L/d=4. Meanwhile, as the surface curvature increases, the value of the secondary maximum Nusselt number decreases. All the other cases exhibit monotonically decreasing values of the Nusselt number along the curved surface. The stagnation point Nusselt numbers are well correlated with Re, L/d, and D/d.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.16-21
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• 2001

Optical properties of $Ag_2CdSnSe_4$ and $Ag_2CdSnSe_4:Co^{+2}$ quaternary semiconductor single crystals grown by the chemical transport reaction method were investigated. The analysis of the X - ray powder diffraction measurements showed that these crystals have a wurtzite structure with lattice constants a = 4.357 $\AA$, c = 7.380 $\AA$, for $Ag_2CdSnSe_4$ and a = 4.885 $\AA$, c = 7.374 $\AA$, for $Ag_2CdSnSe_4:CO^{2+}$. The direct band gap at 298K, obtained from the optical absorption measurement, is found to be 1.21 eV for $Ag_2CdSnSe_4$ and 1.02 eV for $Ag_2CdSnSe_4:CO^{2+}$. The shrinkage of the band gap due to Co-doping is observed and is about 190 meV, We observed four absorption bands of $Co^{2+}$ ions in two near infrared regions of optical absorption spectra of $Ag_2CdSnSe_4$:$Co^{+2}$. These absorption bands were assigned as due to electronic transitions between the split energy levels of $Co^{2+}$ ions in $T_d$ crystal field under spin-orbit interactions.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.288-291
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• 2016

Recently, there has been a lot of researches related to two-dimensional (2D) materials due to their new properties and applications emerging upon 2D confinement. A new type of graphene like two-dimensional layer material, nitrogenated holey two-dimensional structure C2N-h2D, that is possession of evenly distributed holes and nitrogen atoms with proper bandgap has been synthesized. Previous calculation studies already have shown that the variance of the orbital interaction, band structure of few-layer C2N-h2D suggests that interlayer coupling does play an important role in its electronic properties. In this point, using first-principles density functional theory calculation, we here explore the effect of porous embedded iron atom and iron substrate on encapsulated few layer C2N-h2D. We show the atomic structures and the corresponding electronic structures of Fe@C2N to elucidate the effect of iron. Finally, this study demonstrates that embedded iron C2N has AA-stacking as most favorable stacked structure in contrast to pure C2N. In addition, iron substrate modifies its encapsulated C2N from semi-metallic states to metallic state.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.803-805
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• 1992

The InP single crystals were grown by Modified Synthesis Solute Diffusion (SSD) method and its properties were investigated. The crystal growth rate and lattice constant $a_{\circ}$ of the grown crystals were 1.8mm/day, 5.867${\AA}$ respectively. Etch pits density along growth direction of crystal had nearly uniformity' about (2-6)x10 $cm^{-2}$ from first freeze part to last freeze part. The carrier concentration, mobility and resistivity varied from 6.25 x $10^{15}cm^{-3}$, 4218 $cm^{2}$/V sec and 1.38 x $10^{-1}{\Omega}^{-cm}$ at the first freeze part to 8.8x$10^{-3}cm^{-3}$, 4012 $cm^{2}$/V.sec and 1.43 X $10^{-1}{\Omega}^{-cm}$ at the last freeze part. In the photoluminescence at 10K, the radiation transitions were observed by the near band edge recombination, D-A pair recombination and its phonon replica in the undoped InP.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.230-234
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• 1989

Pyroelectric TGS(triglycine sulfate) detectors, whose thicknesses are 0.1mm and 0.2 mm, are fabricated using the grown TGS crystals from aqueous solution. The outut power and noise from these detectors are measured as a function of chopping frequency in the range from 10Hz to 160Hz with the interval of 10Hz. Response time, responsivity and detectivity are derived from the measured output power and noise of the detectors. The results show that the response time is about 15ms, resposivity is 100V/W at 10Hz and the detectivity at the maximum spectral wavelength D{{{{ lambda }}P* is about 10 cmHz1/2w-1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.134-138
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• 1994

$LiTaO_3 (LT)$ single crystals (Y, X-axis) were grown from the congruent composition, 48.65 mole %, $Li_2O$ for SAW (Surface Acoustic Wave) applications. Basic SAW filters were fabricated on the RIST prepared LT wafers (Y-cut) using phtolithography. SAW filter performance was evaluated. The results were compared of the SAW characteristics between RIST prepared LT wafer (Y-cut) and commercial Yamaju wafer (Y-cut). The SAW filter prepared on the RIST grown LT wafer was shown better SAW performances than that of Yamaju wafer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.220-228
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• 1996

CdTe single crystals were grown by vertical Bridgman method using double furnace with two siliconit heating elements. When the peak temperature of the upper furnace was fixed at $1150^{\circ}C$ and that of the lower furnace was $800^{\circ}C$, the temperature gradient was about $22.5^{\circ}C$/cm. The lattice constant $a_0$ was $6.482\AA$ from the X-ray diffraction and the band gap energy obtained from the optical absorption experiment at room temperature was 1.478 eV. PL spectrum showed that the bound exciton emission peak was resolved into ($A^0,X$) (1.5902, 1.5887 eV), ($h\;D^0$) (1.5918 eV) and ($D^0,X$ (1.5928, 1.5932 eV), and we have also calculated binding energy and ionization energy of the neutral donor and acceptor.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.813-817
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• 2002

Magnetoelectric(ME) laminate composites of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3 (PMN-PT)$ and Terfenol-D were prepared by sandwiching single crystals of PMN-PT between Terfenol-D disks. The magnetoelectric voltage coefficient (dE/dH) of the composite was determined to be 10.30 V/cm${\cdot}$Oe, at 1 kHz and under a dc magnetic bias of 0.4 T. The value of dE/dH is ∼80 times higher than either that of naturally occurring magnetoelectrics or artificially-grown magnetoelectric composites. This superior magnetoelectric voltage coefficient is attributed to the high piezoelectric voltage constant as well as the high elastic compliance of PMN-PT single crystal and the large magnetostrictive response of Terfenol-D.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.85-85
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• 2000

The normal state of high-Tc superconducting materials has been believed to contain important clues to finding the correct mechanism of the high-Tc superconductivity. One example is the existence of pseudogap in the normal state even above Tc, as observed in various measurements such as photoemission spectroscopy and tunneling conductance. In this pseudogap regime the existence of preformed pairs only with local phase coherence has been debated. Recently Choi, Bang, and Campbell[1] have proposed the occurrence of the zero-bias conductance enhancement due to Andreev quasiparticle reflection from the preformed pairs even with the local phase coherence. In this study we examine the zero-bias enhancement of the differential conductance near or slightly above Tc, using c-axis tunneling in mesa structure of Bi2Sr20a0u208+d single crystals. In slightly overdoped samples zero-bias conductance enhancement (ZBCE) has been observed over a range of 2 K above Tc. In contrast, in underdoped samples with Tc${\sim}$72K the ZBCE appears over a range of 5-6 K above Tc, a much wider temperature range than in overdoped samples. This result may pose as positive signs of the existence of prefurmed pairs in the normal state of high- Tc superconducting materials.

• Journal of the Mineralogical Society of Korea
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• v.31 no.4
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• pp.235-248
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• 2018

The present work was performed in order to study the effect of competing cation of $Ca^{2+}$ ion on ion exchange of $Cs^+$ on zeolite Y (Si/Al = 1.56). Three single-crystals of fully dehydrated and partially $Cs^+$-exchanged zeolites Y (Si/Al = 1.56) were prepared by the flow method using mixed ion-exchange solutions. The $CsNO_3:Ca(NO_3)_2$ molar ratios of the ion exchange solution were 1 : 1 (crystal 1), 1 : 100 (crystal 2), and 1 : 250 (crystal 3) with a total concentration of 0.05 M. The single-crystals were then vacuum dehydrated at 723 K and $1{\times}10^{-4}Pa$ for 2 days. The structures of the crystals were determined by single-crystal synchrotron X-ray diffraction technique in the cubic space group $Fd{\bar{3}}m$, at 100(1) K. The unit-cell formulas of crystals 1, 2, and 3 were ${\mid}Cs_{21}Ca_{27}{\mid}[Si_{117}Al_{75}O_{384}]-FAU$, ${\mid}Cs_2Ca_{36.5}{\mid}[Si_{117}Al_{75}O_{384}]-FAU$, and ${\mid}Cs_1Ca_{37}{\mid}[Si_{117}Al_{75}O_{384}]-FAU$, respectively. In all three crystals, the $Ca^{2+}$ ions preferred to occupy site I in the D6Rs, with the remainder occupying sites I', II', and II. On the other hand, the significant differences in the fractional distribution of $Cs^+$ ions are observed depending on the intial $Cs^+$ concentrations in given ion exchange solution. In Crystal 1, $Cs^+$ ion are located at sites II', II, III, and III', and in crystal 2, at sites II, IIIa, and IIIb. In crystal 3, $Cs^+$ ions are only located at sites IIIa and IIIb. The degree of $Cs^+$ ion exchange decreased sharply from 28.0 to 2.7 to 1.3 % as the initial $Ca^{2+}$ concentration increases and the $Cs^+$ content decreases.