• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.831-836
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• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• 한국음향학회지
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• 제34권5호
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• pp.335-342
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• 2015

포노닉 크리스탈이란 기저물질 내에 주기적으로 배열된 산란체로 구성된 복합물질로서 포노닉 크리스탈에 입사된 음파가 특정 주파수 대역에서 차단되는 현상인 밴드 갭이라는 중요한 특성을 갖는다. 본 연구에서는 수중에서 산란체로서 1 mm의 직경을 갖는 원기둥 형태의 스테인리스 스틸 막대가 1.5 mm의 격자상수를 가지며 정방형으로 배열된 2차원 포노닉 크리스탈의 음향 밴드 구조를 이론 및 실험적으로 고찰하였다. 2차원 포노닉 크리스탈의 밴드 구조를 예측하기 위해 유한요소법을 이용하여 첫째 브릴루앙 영역의 ${\Gamma}X$ 방향에 대해 주파수와 파동벡터에 대한 분산관계를 계산하였다. 초음파가 입사되는 방향과 수직한 스테인리스 스틸 막대 층의 개수를 1, 3, 5, 7, 9개로 변화시켜가며 투과계수 및 반사계수를 측정하였다. 계산된 분산관계로부터 2 MHz 이하의 주파수 대역에서 5개의 밴드 갭이 존재하는 것으로 예측되었으며, 첫째 밴드 갭은 0.5 MHz를 중심으로 나타났다. 투과계수 및 반사계수로부터 실험적으로 확인된 밴드 갭은 분산관계로부터 예측된 밴드 갭과 잘 일치하는 것으로 나타났다.

• 한국음향학회지
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• 제23권2호
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• pp.103-108
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• 2004

본 연구에서는 고상단결정법으로 성장시킨 PMN-32%PT 단결정의 모든 물성을 공진법을 이용하여 측정하였다. tetragonal 결정구조의 PMN-PT는 독립적인 물성으로 6개의 탄성상수, 3개의 압전상수, 2개의 유전상수를 가진다. 이상의 값들을 서로 다른 형태를 가진 6종류의 시편을 만들어 임피던스 분석기를 이용하여 각각의 시편의 진동모드별 전기임피던스를 측정하여 구하였다. 측정결과 일반 압전세라믹 보다 큰 전기기계결합계수 k/sub 33/ (∼85%)과 압전계수 d/sub 33/ (∼1200pC/N)을 가짐을 확인하였다. 측정한 값의 타당성은 측정시편의 유한요소해석을 통한 임피던스 스펙트럼과 상용 d/sub 33/ -meter측정결과와의 비교를 통해 확인하였다.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.272-279
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• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.99-103
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• 2015

One-dimensional photonic crystals (1D PCs) were fabricated by RF sputtering technique on p-Si (100), and fused quartz substrates. The 1D PCs structures consisted of $TeO_x$ (x=1.42), and $SiO_2$ with the difference refractive index. In order to estimate the effect on a defect level within 1D PCs structures, samples were prepared with both normal, and defect mode. The structural and optical properties were confirmed by Scanning electron microscope (SEM), and Ultraviolet visible near-infrared spectrophotometer (UV-VIS-NIR) respectively. In the case of a 1D PC normal mode without defect layer, it had a photonic band gap (PBG) in the near infrared (NIR) region. In the case of a 1D PC defect mode with defect layer, it had a sharp transmission band owing to a defect level, and moved towards the longer wavelength after exposing He-Cd laser with a wavelength of 325 nm.

• 한국세라믹학회지
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• 제45권3호
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• pp.139-141
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• 2008

The piezoelectric properties of tetragonal 0.88Pb$(Zn_{1/3}Nb_{2/3)O_3-0.12PbTiO_3$ single crystals are characterized along the <111> direction, which composed the engineering domain configuration in the tetragonal phase. The <111>-oriented crystal possessed smaller $d_{33}$ values compared to the crystal along the <001> spontaneous polarization direction. Based on phenomenological theory, it is shown that the engineering domain configuration does not enhance the piezoelectric constant in tetragonal 0.88Pb$(Zn_{1/3}Nb_{2/3)O_3-0.12PbTiO_3$ single crystals. In addition, the electrostrictive coefficients of $Q_{12}=-0.03706m^4/C^2,\;Q_{11}=0.10765m^4/C^2,\;and\;Q_{44}=0.02020m^4/C^2$ of tetragonal 0.88PZN-0.12PT single crystals were calculated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.607-608
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• 2005

In this paper, author describe the undoped and $Co^{2+}$(0.5mole%) doped $Cd_4SnSe_6$ single crystals were grown by the chemical transport reaction(CTR) method. The grown single crystals crystallize in the monoclinic structure of space group Cc and have the direct band gap structure. The energy gaps of them are 1.68 eV for $Cd_4SnSe_6$ and 1.50 eV for $Cd_4SnSe_6:Co^{2+}$ at 300K respectively.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.726-730
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• 2007

Two dimensional photonic crystals (2D PCs) have been fabricated by a double exposure holographic method using a He-Cd laser with a wavelength of 442nm. The arrays of the 2D PCs exhibit variable lattice structures from square to triangle according to a change of rotating angle $({\gamma})$ for double exposure beams. In addition, the period and filling factor of PCs as well as the forms (dot or antidot) could be controlled by experimental conditions. $A l.18-{\mu}m-thick$ resist was spin-coated on Si substrate and the 1st holographic exposure was carried out at incident angle $({\theta})$ of $11^{\circ}$. Then the sample was rotated to ${\gamma}=45^{\circ}{\sim}90^{\circ}$ and the 2nd holographic process was performed at ${\theta}=11^{\circ}$. The variation of diffraction efficiency during the exposure process was observed using a He-Ne laser in real time. The images of 2D PCs prepared were analyzed by SEM and AFM. We believe that the double holographic method is a tool suitable to realize the 2D PCs with a periodic array of large area.

• 한국표면공학회지
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• 제32권6호
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• pp.647-657
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• 1999

Due to the inherently poor adhesion strength of Cu-based leadframe/EMC (Epoxy Molding Compound) interface, popcorn cracking of thin plastic packages frequently occurs during the solder reflow process. In the present work, in order to enhance the adhesion strength of Cu-based leadframe/EMC interface, black-oxide layer was formed on the leadframe surface by chemical oxidation of leadframe, and then oxidized leadframe sheets were molded with EMC and machined to form SDCB (Sandwiched Double-Cantilever Beam) and SBN (Sandwiched Brazil-Nut) specimens. SDCB and SBN specimens were designed to measure the adhesion strength between leadframe and EMC in terms of critical energy-release rate under quasi-Mode I ($G_{IC}$ ) and mixed Mode loading ($G_{C}$ /) conditions, respectively. Results showed that black-oxide treatment of Cu-based leadframe initially introduced pebble-like X$C_2$O crystals with smooth facets on its surface, and after the full growth of $Cu_2$O layer, acicular CuO crystals were formed atop of the $Cu_2$O layer. According to the result of SDCB test, $Cu_2$O crystals on the leadframe surface did not increase ($G_{IC}$), however, acicular CuO crystals on the $Cu_2$O layer enhanced $G_{IC}$ considerably. The main reason for the adhesion improvement seems to be associated with the adhesion of CuO to EMC by mechanical interlocking mechanism. On the other hand, as the Mode II component increased, $G_{C}$ was increased, and when the phase angle was -34$^{\circ}$, crack Kinking into EMC was occured.d.

• 대한전자공학회논문지
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• 제21권2호
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• pp.36-46
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• 1984

Ga1-xlnxSe 단결정을 X=0.0∼0.1영역과 X=0.8-1.0영역에서 Bridgman방법으로 성장시켰다. 성장된 Ga1-xlnxSe 단결정은 X=0.0∼0.1영역에서는 hexagonal구조, X=0.8∼1.0영역에서는 rhombohedral 구조를 가지고 있었다. CaInSe 단결정은 간접천이형 energy gap을 가지고 있었으며, 15°K에서 250°K로 시편의 온도가 상승할 때 energy gap 은 감소되었고, 온도계수는 (-2.4∼-4.3)×10-4eV/K으로 주어졌다. Ga1-xlnxSe 단결정의, energy gap에 온도 의존성은 Schmid의 electron-phonon 상호작용의 이론으로 설명할 수 있었다.