• 한국세라믹학회지
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• 제31권3호
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• pp.249-256
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• 1994

By surface structure and X-ray topographic observation, growth mechanism of NAB single crystal grown by TSSG technique using a BaB4O7 flux was studied. Surface structure of grown crystals were investigated by optical microscope. Growth history and crystal defects included within grown crystal were investigated using X-ray topography. The {001} faces were grown by 2-D nucleation growth. As decreasing cooling rate, growth mechanism of {111} and {11} was changed from 2-D nucleation growth to the growth by screw dislocation. Only surface striations developed parallel to a-axis were observed on {010} faces. Growth sector of NAB crystals were divided into {001}, {111}, {010}, {021}, {11}. The inclusion which was usually trapped between {001} faces was investigated.

• Journal of the Optical Society of Korea
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• 제19권1호
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• pp.63-68
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• 2015

A one-step fabrication of a photonic crystal (PC) with functional defects is demonstrated. Using multi-beam phase-controlled holographic lithography with a diffracting optical element, large area one dimensional (1D) and two dimensional (2D) PCs with periodic defects were fabricated. The uniform area is up to $2mm^2$, and tens of defect channels have been introduced in the 1D and 2D PC structure. This technique gives rise to substantial reduction in the fabrication complexity and significant improvement in the spatial accuracy of introducing functional defects in photonic crystals. This method can also be used to design and fabricate three dimensional (3D) PCs with periodic defects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.126-129
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• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

• 한국세라믹학회지
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• 제52권1호
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• pp.77-82
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• 2015

The effect of the electrode type on the dielectric and piezoelectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ (PMN-PZT) single crystals was investigated in an effort to improve their properties for various piezoelectric applications. First, three different types of PMN-PZT single crystals [PMN-PZT-A (piezoelectrically soft type; dielectric constant ~ 10,000), PMN-PZT-B (piezoelectrically soft type; phase-transition temperature between the rhombohedral and tetragonal phases ($T_{RT}$) ~ $145^{\circ}C$), PMN-PZT-C (piezoelectrically hard type; high mechanical quality factor ($Q_m$) ~ 1,000)] were fabricated using the solid-state single crystal growth (SSCG) method. Then, four different types of electrodes [sputtered Au, sputtered Cr/Au, sputtered Ti/Au, and fired Ag] were formed on the single crystals, and their dielectric and piezoelectric properties were measured. The single crystals with a sputtered Ti/Au electrode showed the highest dielectric and piezoelectric constants but the lowest coercive electric field ($E_C$). The single crystals with a fired Ag electrode showed the lowest dielectric and piezoelectric constants but the highest coercive electric field ($E_C$). This dependence on the type of electrode was most significant in the piezoelectrically hard PMN-PZT-C single crystals. However, the effects of the electrode type on the phase transition temperatures ($T_C$, $T_{RT}$) and dielectric loss were negligible. These results clearly demonstrate that it is important to select an appropriate electrode so as to maximize the dielectric and piezoelectric properties of single crystals in each type of piezoelectric application.

• 한국세라믹학회지
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• 제54권2호
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• pp.150-157
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• 2017

Three types of piezoelectric single crystals [PMN-PT (Generation I $[Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3]$), PMN-PZT (Generation II $[Pb(Mg_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3]$), PMN-PZT-Mn (Generation III)] were grown by the solid-state single crystal growth (SSCG) method, and their dielectric and piezoelectric properties were measured and compared. Compared to (001) PMN-PT and PMN-PZT single crystals, the (001) PMN-PZT-Mn single crystals exhibited a higher transition temperature between the rhombohedral and tetragonal phases ($T_{RT}=144^{\circ}C$), as well as a higher coercive electric field ($E_C=6.3kV/cm$) and internal bias field ($E_I=1.6kV/cm$). The (011) PMN-PZT-Mn single crystals showed the highest coercive electric field ($E_C=7.0kV/cm$), and the highest stability of $E_C$ and $E_I$ during 60 cycles of polarization measurement. These results demonstrate that both Mn doping (for higher electromechanical quality factor ($Q_m$)) and a (011) crystallographic orientation (for higher coercive electric field and stability) are necessary for high power transducer applications of these piezoelectric single crystals. Specifically, the (011) PMN-PZT-Mn single crystal (Gen. III) had the highest potential for application in the fields of SONAR transducers, high intensity focused ultrasound (HIFU), ultrasonic motors, and others.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.61-66
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• 2009

Characteristics of the photonic bandgaps (PEGs) in two-dimensional photonic crystals (2D PCs) with a square lattice have theoretically studied using a finite difference time domain (FDTD) simulation. In this paper, we propose a concept of optical coverage ratio (OCR) as a new structural parameter to determine the PEGs for E-polarized light. The OCR is an optically compensated filling factor. It is possible to normalize the PEGs of 2D PCs by introducing the OCR.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.63.1-63.1
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• 2015

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.123-127
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• 1997

Various recrystallization techniques has been applied to control morphology and size of NTO(3-nitro-1, 2, 4-triazole-5-one) crystals. With cooling method, it was found that the size of NTO at aqueous solution was controlled in the range of 5 to 500 $\mu\textrm{m}$. The spherical or cubic shapes of particles were obtained by adjusting operating conditions. Hexagonal and cubic shaped crystals of NTO were also obtained by sonication and evaporative method using aqueous solution of NTO. Their particle sizes were ranged 20 to 30 $\mu\textrm{m}$. In gas anti-solvent method with NTO/DMF and NTO/DMSO solutions, cubic type of NTO was obtained and the range of their sizes was 0.5-2$\mu\textrm{m}$.

• 한국결정학회지
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• 제7권2호
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• pp.120-125
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• 1996

Salmonella typhimurium LT2에서 deoxy-thymidine diphosphate-D-gluxose-4,6-dehydratase의 유전자를 재조합한 Escherichia coli BL21 clone으로부터 dTDP-D-glucose dehydratase를 분리 정제한 후, 이 효소의 단결정을 상온에서 sitting drop 기체확산법으로 성장시켰다. 결정은 효소에 기질이 포함되어 있는 것과 포함되어 있지 않는 것 모두가 얻어지며, 이 때 침전제는 1.6-2.0 M Na, K 인산 완충용액(pH 8.0)을 사용하였다. 이 단결정은 최소 2.5Å의 분해능으로 회절하였으며, 공간군은 hexagonal한 P61이고, 격자의 크기는 a=b=168.54Å, c=81.08Å이었다. Asymmetric unit에는 이량체 한분자를 포함하고 있으며 단백질 질량당 결정의 부피는 VM=2.4Å3/Da, 용매의 함유율은 부피를 기준으로 64%였다.

• 한국세라믹학회지
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• 제55권3호
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• pp.290-298
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• 2018

In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.