• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.12
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• pp.1-7
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• 2004

We have developed a 24GHz side-looking vehicle detection radar. A 24GHz front-end module and a novel signal processing algorithm have been developed for speed measurement and size classification of vehicles in multiple lanes. The system has a fixed antenna and FMCW processing module. This paper presents the background theory of operation and shows some measured data using the algorithm. The data shows that measured velocity of the passing vehicle is within the accuracy of 95% in single lane and the velocity of the vehicles in two lanes is within the accuracy of 90% by using variable threshold estimation. The classification of vehicle size as small, medium and large has been measured with 89% accuracy.

• Journal of the Korean Society of Industry Convergence
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• v.19 no.2
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• pp.62-68
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• 2016

Laser distance measuring systems are used in many fields with high precision. However, when measuring the reflector such as the mirror and the black color, a laser distance measuring system does not guarantee the measurement accuracy. In order to measure the shape of the cargo, this study proposes the radar distance measurement system. The radar distance measuring system is composed of a distance measuring unit with a 24 GHz antenna module, a signal processing and control board and the 1-axis tilting unit. And, this study developed a monitoring program to monitor the measured data. In order to evaluate performance of the developed system, the distance measurement tests are carried out. The distance error was about 6-15 cm. However, considering the size of the cargo, the precision is not a problem. And, cargo shape was measured by using the distance information measured by the 1-axis tilting unit. It could get a 2 dimension shape profile for the cargo stacked in a yard.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.1
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• pp.137-146
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• 2009

We present a micromechanical digital-to-analog (DA) variable capacitor using a parallel digital actuator array, capable of accomplishing high-Q tuning. The present DA variable capacitor uses a parallel interconnection of digital actuators, thus achieving a low resistive structure. Based on the criteria for capacitance range ($0.348{\sim}1.932$ pF) and the actuation voltage (25 V), the present parallel DA variable capacitor is estimated to have a quality factor 2.0 times higher than the previous serial-parallel DA variable capacitor. In the experimental study, the parallel DA variable capacitor changes the total capacitance from 2.268 to 3.973 pF (0.5 GHz), 2.384 to 4.197 pF (1.0 GHz), and 2.773 to 4.826 pF (2.5 GHz), thus achieving tuning ratios of 75.2%, 76.1%, and 74.0%, respectively. The capacitance precisions are measured to be $6.16{\pm}4.24$ fF (0.5 GHz), $7.42{\pm}5.48$ fF (1.0 GHz), and $9.56{\pm}5.63$ fF (2.5 GHz). The parallel DA variable capacitor shows the total resistance of $2.97{\pm}0.29\;{\Omega}$ (0.5 GHz), $3.01{\pm}0.42\;{\Omega}$ (1.0 GHz), and $4.32{\pm}0.66\;{\Omega}$ (2.5 GHz), resulting in high quality factors which are measured to be $33.7{\pm}7.8$ (0.5 GHz), $18.5{\pm}4.9$ (1.0 GHz), and $4.3{\pm}1.4$ (2.5 GHz) for large capacitance values ($2.268{\sim}4.826$ pF). We experimentally verify the high-Q tuning capability of the present parallel DA variable capacitor, while achieving high-precision capacitance adjustments.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1027-1033
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• 2013

In this work, a D-band imaging detector has been developed in a 65-nm CMOS technology for high frequency imaging application. The circuit was designed based on the resistive self-mixing of MOSFET devices. The fabricated detector exhibits a maximum responsivity of 400 V/W and minimum NEP of 100 $pW/Hz^{1/2}$ at 145 GHz. The chip size is $400{\mu}m{\times}450{\mu}m$ including the probing pads and a balun, while the core of the circuit occupies only $150{\mu}m{\times}100{\mu}m$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.919-930
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• 2001

This paper presents a wideband technique of impedance and axial-ratio bandwidth which uses the stacked planar array structure through optimum design of sub-polarization generating sections and parasitic patch. So, the effect of the dual-resonance characteristic can contribute to the bandwidth expansion of single fed planar array antenna using circular polarization which doesn\`t hire previous bandwidth expansion technique. The antenna can be used as a dual-band antenna by adjusting the resonance frequencies as well, and then the antenna is designed and fabricated in the frequency band of domestic satellite-TV service. This antenna has the performance of 9.7 % impedance bandwidth and 24 dBi of antenna gain. And it has also 2.8 % and 1.4 % of 3 dB Axial-ratio bandwidth at 11.4 GHz and 11.8 GHz respectively.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1509_1510
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• 2009

This paper presents the design and simulation results of ohmic contact RF MEMS silicon switch with a high isolation at high frequencies along with the position of a contact part, initial off-state and intermediate off-state including the state where a contact part is placed right over a signal line of coplanar waveguide (CPW). The ohmic contact part is connected with comb drives made of high resistivity single crystalline silicon. The released contact part is $30{\mu}m$ apart from the edge of signal line on the glass substrate along the lateral direction (x-direction) at initial off-state. The electrostatic force of the comb electrode creates the x-directional movement thus initial state is converted to the intermediate off-state. The initial off-state of the switch results in isolations of -31 dB, -24 dB and reflections of -0.45 dB, -0.67 dB at 50 GHz and 110 GHz, respectively. It shows the isolation degradation when the contact part moves right over the signal line of CPW like an initial off-state of a conventional MEMS switch. The isolations and reflections are -31 dB, -24 dB and -0.50 dB, -1.31 dB at 50 GHz and 110 GHz, respectively at the intermediate off-state.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.7A
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• pp.563-568
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• 2003

In this paper, a miniaturized parallel coupled bandpass filter using multi-layered LTCC(Low Temperature Co-fired Ceramics) substrate for SOP(System-On-Package) is proposed for applications to wireless communication systems. The fabricated BPF is composed of five 106${\mu}{\textrm}{m}$ thick LTCC layers and its size is 5.24mm x 4.3mm x 0.53 mm. The measured characteristics of the BPF show the center frequency of 5.8GHz, bandwidth of 200MHz, insertion loss of 2.326dB and return loss of 13.679dB. In addition, the attenuation is 28.052dB at 4.7GHz.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.4
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• pp.549-554
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• 2017

In this paper, we studied the design and fabrication of $2{\times}2$ microstrip array antenna at around 5 GHz band.. To improve of frequency properties of antenna, feed microstrip patch antenna was simulated by HFSS(High Frequency Structure Simulator). A $2{\times}2$ array antenna was designed and fabricated by photolithograph on an FR4 substrate (dielectric constant of 4.4 and thickness of 1.6 mm). The fabricated $2{\times}2$ array antenna showed a center frequency, the minimum return loss and bandwidth were 5.3 GHz, -24dB, and 390MHz, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.4
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• pp.381-386
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• 2014

In this paper, the effect of slot antenna's location in the radiation performance and impedance bandwidth was analyzed. The proposed antenna was designed to operate at Wi-Fi band(2.4~2.5 GHz) when the slot antenna is located at the center of the ground plane, the proposed antenna has a bandwidth of 340 MHz(2.24~2.58 GHz) under voltage standing wave ratio of = 2 and achieves average realized efficiency of 69 % over Wi-Fi bands.