• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.604-610
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• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• 전기학회논문지
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• 제62권1호
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• pp.90-94
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• 2013

A low loss power dividing switch in a indoor microwave power distribution system is proposed and designed with a various power dividing ratio. Switching characteristics are analyzed by use of the S-parameter of the switch. Newly proposed switch showed a very low return loss less than -30dB at the operating frequency of 2.45GHz. Three kinds of the switch in which we take out individually 1/2, 1/3 and 1/4 of the input power were fabricated, and measured the delivered, transmitted, and return loss power ratio. Simulated results showed that the lower power ratio is, the better accurate operating performance shows. This switch can switch the input power from 4.5% to 58% with the variance of 5% output power. The experimental results are in good agreement with the simulation within the return loss of 1%.

• 한국산학기술학회논문지
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• 제13권4호
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• pp.1789-1796
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• 2012

본 논문에서는 RFID 태그 칩 구동을 위한 새로운 고효율 CMOS 브리지 정류기를 설계하고 해석하였다. 동작 주파수가 높아짐에 따라 증가하는 게이트 누설전류의 주 통로가 되는 게이트 커패시턴스를 회로적인 방법으로 감소시키기 위해 제안한 정류기의 입력단을 두 개의 NMOS로 종속접속형으로 연결하여 설계하였으며, 이러한 종속접속형 입력단을 이용한 게이트 커패시턴스 감소 기법을 이론적으로 제시하였다. 또한 제안한 정류기의 출력특성은 고주파 소신호 등가회로를 이용하여 해석적으로 유도하였다. 일반적인 경우의 $50K{\Omega}$ 부하저항에 대해, 제안한 정류기는 915MHz의 UHF(for ISO 18000-6)에서는 28.9%, 2.45GHz의 마이크로파 대역 (for ISO 18000-4)에서는 15.3%의 전력변환효율을 보여, 915MHz에서 26.3%와 26.8%, 2.45GHz에서 13.2%와 12.6%의 전력변환효율을 보인 비교된 기존의 두 정류기에 비해 보다 개선된 전력변환효율을 보였다. 따라서 제안한 정류기는 다양한 종류의 RFID 시스템의 태그 칩 구동을 위한 범용 정류기로 사용될 수 있을 것이다.

• 한국안전학회지
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• 제22권5호
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• pp.27-32
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• 2007

We investigated the damage of the TTL ICs which manufactured five different technologies by artificial microwave. The artificial microwave was rated at a microwave output from 0 to 1000W, at a frequency of 2.45GHz. The microwave power was extracted into a standard rectangular waveguide(WR-340) and TTL ICs were located into the waveguide. TTL ICs were damaged two types. One is breakdown which means no physical damage is done to the system and after a reset the system is going back into function. The other is destruction which means a physical damage of the system so that the system will not recover without a hardware repair. TTL SN74S08N and SN74ALS08N devices get a breakdown and destruction occurred but TTL SN74LS08N, SN74AS08N and 74F08N devices get a destruction occurred. Also destructed TTL ICs were removed their surface and a chip conditions were analyzed by SEM. The SEM analysis of the damaged devices showed onchipwire and bondwire destruction like melting due to thermal effect. The tested results expect to be applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial microwave environment.

• 한국표면공학회지
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• 제42권3호
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• pp.139-144
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• 2009

A microwave plasma torch at the atmospheric pressure by making use of magnetrons operated at the 2.45 GHz and used in a home microwave oven has been developed. This electrodeless torch can be used to various areas, including industrial, environmental and military applications. Although the microwave plasma torch has many applications, we in the present work focused on the microwave plasma torch operated in pure steam and several applications, which may be used in future and right now. For example, a high-temperature steam microwave plasma torch may have a potential application of the hydrocarbon fuel reforming at one atmospheric pressure. Moreover, the radicals including hydrogen, oxygen and hydroxide molecules are abundantly available in the steam torch, dramatically enhancing the reaction speed. Also, the microwave plasma torch can be used as a high-temperature, large-volume plasma burner by injecting hydrocarbon fuels in gas, liquid, and solid into the plasma flame. Finally, we briefly report treatment of soils contaminated with oils, volatile organic compounds, heavy metals, etc., which is an underway research in our group.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.435-438
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• 2004

The effects sintering additives such as $xwt%(0.242Bi_2O_3-0.782V_2O_5)$ on the microwave dielectric and sintering properties of $MgCo_2(VO_4)_2$ ceramics were investigated. Highly dense samples were obtained for $MgCo_2(VO_4)_2$ at the sintering temperature of $950^{\circ}C$ with $0.242Bi_2O_3-0.758V_2O_5$ additions of $0.5{\sim}5wt%$. The microwave dielectric properties of $MgCo_2(VO_4)_2$ with $0.5wt%(0.242Bi_2O_3-0.758V_2O_5)$ sintered at $950^{\circ}C$ were as follows : $Q{\times}f_0\;=\;45,375GHz,\;\epsilon_r\;=\;9.7\;and\;\tau_f\;=\;-23.2ppm/^{\circ}C$.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• 한국전자파학회논문지
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• 제20권3호
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• pp.303-312
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• 2009

본 연구에서는 초고주파를 사용하여 플라즈마 가시광을 발생시키기 위한 전계 집속형 도파관 시스템을 제안하였다. 이 시스템은 초고주파 전력 공급기인 마그네트론, 전력 전송을 위한 도파관부 및 메쉬형 공동으로 이루어진 반응기로 구성된다. 소량의 황 분말과 버퍼 가스인 Ar이 봉입된 석영 벌브를 반응기 내에 위치시키고, 강한 전계를 집속시킴으로써 황 플라즈마가 생성 및 여기되도록 하였다. 즉, 도파관과 반응기의 내벽에 각각 도체팁을 장착시키고, 그 사이에 플라즈마 벌브를 위치시킴으로써 벌브에 강한 전계가 집중되도록 하였다. 또한 플라즈마 생성 과도기에서, 플라즈마의 전기적 도전성 변화에 따른 정합 특성의 열화를 최소화할 수 있는 도파관부를 설계하여 안정적으로 동작되도록 하였다. 최종적으로 2.45 GHz 알루미늄 도파관 시스템을 제작하고, 400W급 마그네트론을 사용한 가시광 방출 실험을 통해 설계된 시스템의 타당성을 검증하였다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2018년도 춘계학술대회
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• pp.441-444
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• 2018

본 논문에서는 초광대역 통신을 위한 LTE/WiMAX용 마이크로스트립 안테나를 설계하였다. 제안된 안테나의 기판은 FR-4(er=4.3)이고 크기는 29[mm] x 45[mm]이며 LTE 주파수대역인 1.82[GHz]와 WiMAX 주파수의 대역인 3.5[GHz]의 대역에서 사용할 수 있는 특성을 갖도록 설계하였다 시뮬레이션은 CST Microwave Studio 2014을 사용하였으며 시뮬레이션 결과 이득은 1.82[GHz]일 때 1.785[dB], 3.5[GHz]일 때 1.720[dB]이다. S-Parameter 또한 원하는 주파수 대역에서 -10dB(WSWR2:1) 이하의 결과를 볼 수 있었고, 광대역성, 소형화, 저가격화, 저손실화 등을 구현하기 위하여 각 단계마다 이론적 근거에 의한 수식을 이용하였고 슬롯의 폭, 길이, 전송선로의 폭 등을 계산하였다. 그러므로 원하는 조건을 만족하여 해당 안테나의 적용이 가능할 것으로 사료된다.

• 한국세라믹학회지
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• 제44권3호
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• pp.182-187
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• 2007

10 mol% $Gd_{2}O_{3}-CeO_{2}$ powder was sintered by microwave in a 2.45 GHz multimode cavity to develop a dense electrolyte layer for intermediate temperature solid oxide fuel cells (IT-SOFCs). Samples were sintered from $1100^{\circ}C$ upto $1500^{\circ}C$ by $50^{\circ}C$ difference and kept for 10 min and 30 min at the maximum temperature respectively. Theoretical density of the sample sintered at $1200^{\circ}C$ for 10 min was 95.4% and increased gradually upto 99% in the sample sintered at $1500^{\circ}C$ for 30 min. All of sintered samples showed very fine microstructures and the maximum average grain size of the sintered sample at $1500^{\circ}C$ for 30 min was $(0.87{\pm}0.42){\mu}m$. Ionic conductvity of the samples were measured by DC 4 probe method.