• Proceedings of the IEEK Conference
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• 2000.06e
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• pp.191-194
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• 2000

A 2.4 GHz single ended two stage low noise amplifier(LNA) is designed for Bluetooth application. The circuit was implemented in a standard digital 0.25 $\mu\textrm{m}$ CMOS process with one poly and five metal layers. At 2.4 GHz, the LNA dissipates 34.5 mW from a 2.5V power supply voltage and provides 24.6 dB power gain, 2.85 dB minimum noise figure, -66.3 dB reverse isolation, and an output 1-dB compression level of 8.5 dBm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.117-122
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• 2006

A CMOS LNA based on a single-stage cascode configuration is designed for MB-OFDM ultra-wide band(UWB) systems. Wideband($3.1GHz\~4.9GHz$) input matching is performed using a simple bandpass filter to minimize the chip size and the noise figure degradation. The simulation results using $0.18{\mu}m$ CMOS process parameters show a power gain of 9.7dB, a 3dB band width of $2.1GHz\~7.1GHz$, a minimum NF of 2dB, an IIP3 of -2dBm. better than -11.8dB of input matching while occupying only $0.74mm^2$ of chip area. It consumes 25.8mW from a 1.8V supply.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.129-132
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• 2000

In this paper, a 1.8㎓ low noise amplifier was designed and simulated using 0.2$\mu\textrm{m}$ Si CMOS process. Noise characteristics and s parameters were extracted for the 300$\mu\textrm{m}$ gate width and 0.25$\mu\textrm{m}$ gate length NMOS transistors. For high available power gain, each stage was designed cascode type. It revealed available power gain of 23.5dB, noise figure of 2.0dB, power consumption of 15㎽ at 2.5V. It was shown that designed low noise amplifier had good RF performance. Designed Si CMOS LNA is expected to be used for RF front-end in transceiver.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1114-1122
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• 2005

In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1235-1240
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• 2008

In this paper, we presented an active RFID system in 2.45GHz range including LNA, Mixer and gain block. And in this work, a link budget model for RFID applications are proposed. We describe the detailed design and implementation of our system. Our components in RFID system has features such as low Noise Figure, reliable energy budget, and standard compliance with ISO 18000-4. Our receiver is effective for development and evaluation of prototype applications because of the flexibility of the design hardware. So, our platform will be suitable for versatile item management applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.4
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• pp.635-641
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• 1998

This paper presents development of a small size LNA operating at 824 ∼ 849 MHz used for a receiver of a CELLULAR CDMA Base station and a transponder. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA and is suitable for input stage matching. The LNA consists of low noise GaAs FET ATF-10136 and internally matched VNA-25. The LNA is fabricated with both the RF circuit and the self-bias circuits in aluminum housing. As a result, the characteristics of the LNA implemented here shows above 35dB in gain and below 0.9dB in noise figure, 18.6dBm P1dB power, a typical two tone IM3, -31.17dB with single carrier backed off 10dB from P1dB.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.1
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• pp.119-124
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• 2014

In this paper, A GSm/WCDMA band antenna which can be confirmed positioning information of a container by using the GPS/GLONASS bands on one board and can be sent the positioning information to the mobile communication network in real time is designed. A microstrip patch antennas which supports dual-band (GPS and GLONASS) was optimized. The antenna size is $25{\times}25{\times}5[mm]$. A chip monopole antennas which supports dual-band (GSM and WCDMA) was optimized. The antenna size is $27{\times}8{\times}3.2[mm]$. To amplify the Satellite reception signal level, two-stage low noise amplifier(LNA) was designed. The LNA gain is 27[dB]. The size of Jig for antennas measuring is $100{\times}30{\times}1[mm]$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.7
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• pp.1374-1379
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• 2003

In this paper, twoㆍstage low noise amplifier(LNA) for 24㎓ is designed and fabricated using NE450284C HJ-FET of NEC CO. In order to get noise figure and input VSWR to be wanted it is considered input VSWR and noise figure simultaneously in matching-circuit designing. The fabricated two-stage low noise mph u has the gai of 16.6㏈, input VSWR of 1.6, and output VSWR under 1.5.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.9-16
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• 1997

A 23GHz 1-stage LNA was designed by using new topology of coupled line type with EEsof softwares and modified by using MPIE numerical analysis. The parallel coupled filter-type matching sections give impedance matching and DC blocking simultaneously, and have small discontinuities. This matching scheme has simple structure in the design process and give small error. The EFT chip was directly attached to the ground metal. The designed LAN gives 6.2dB gain and 2.5dB noise figure without considering the loss of connectors. Through these results, it was verified that our design process, matching schemes and fabrication technologies was valied for developing 20GHz-band LNA.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.487-488
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• 1995

Broadband Microwave Low Noise Amplifier(LNA) is designed. The matching method using the broadband BPF(BandPass Filter) is introduced in this paper. This method is that the filter having the same reflection coefficient of Microwave GaAs FET in the desired bandwidth is located on the input stage of FET. The Simulated results is obtained that the $S_{21}$ and noise figure in 2.5GHz$\sim$9GHz, band are 8.5dB $\pm$ 1.5dB, 2.5dB $\pm$ 0.3dB respectively.