Design and Fabrication of two-stage Low Noise Amplifier for 24㎓

24㎓ 2단 저잡음 증폭기의 설계 및 제작

  • 한석균 (목포해양대학교 해양전자ㆍ통신공학부)
  • Published : 2003.12.01

Abstract

In this paper, twoㆍstage low noise amplifier(LNA) for 24㎓ is designed and fabricated using NE450284C HJ-FET of NEC CO. In order to get noise figure and input VSWR to be wanted it is considered input VSWR and noise figure simultaneously in matching-circuit designing. The fabricated two-stage low noise mph u has the gai of 16.6㏈, input VSWR of 1.6, and output VSWR under 1.5.

Keywords

References

  1. 이재관, 이찬주, 김종헌, 'Design and Implementation of Low Noise Amplifier for L-Band', 秋季 마이크로波 및 電波 學術大會 論文集, vol. 21, No.2, pp.43-46, 1998.9
  2. G. Gonzalez, 'Microwave Transistor Amplifier Analysis and Designs', Prentice Hall, 1997
  3. M.L. Edwards, 'A New Criterion for Linear 2-port Stability Using a Single Geometrically Derrived Parameter' IEEE Trans. Vol. 40. No. 12., December 1992
  4. David M. Pozar, 'MICROWAVE ENGINEERING', JOHN WILEY & SONS, INC.
  5. Rajesh Mongia, Inder Bahl, Prakash Bhartia, 'RF AND MICROWAVE COUPLED-LINE CIRCUITS', Artech House Publishers, 1999
  6. 文相善, 'A study on the Graphic Design Method within limits of Input and Output VSWR for the Optimum LNA', 2001.12