• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.487-488
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• 2015

New inverter motor drive systems consume 30%~50% less energy compared to existing motor drive systems. For inverter motor drive systems, the development of a 1200V high side driver is critical. This paper presents an advanced 1200V high side driver with low power consumption and high ruggedness. This solution implements a high voltage level shifter which consumes low power by adding a clamped VGS LDMOS driver to the conventional short pulse generator. Moreover, this paper proposes a highly rugged 1200V LDMOS which improves SOA by limiting the hole current. This paper could be applied to smart power modules used for HVAC (heating, ventilation, and airconditioning) and industrial inverters. Consequently, this paper will provide design engineers with an understanding of how they can make a significant contribution to worldwide energy savings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.99-100
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• 2009

탄화규소를 이용한 1200V급 MOSFET 소자 제작을 위하여 특성 simulation을 수행하였다. 1200V 내압을 얻기 위해서 불순물 농도가 5E15/cm3이고 에피층의 두께가 12um인 상용 탄화규소 웨이퍼를 기준으로 하였으며 채널 저항을 줄이기 위해 채널길이를 $0.5{\mu}m$로 하였다. 게이트전압이 13V, 드레인 전압이 4V에서 specific on-resistance 값은 $12m\;{\Omega}cm^2$로 매우 우수한 특성을 보이고 있다. P-body의 표면 농도를 5E16/cm3 에서 1E18/cm3으로 변화시키면서 소자의 전기적 특성을 예측하였으며 실험 결과와 비교하여 특성 변수를 추출하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.212-213
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• 2008

This paper describes the analysis of the device characteristics of the NPT type 1200V Insulated gate Bipolar Transistor. In case of NPT type IGBT devices, optimized n-epi layer thickness and concentration is important to obtain low on-state voltage and breakdown voltage characteristics. In this paper, we analyzed on-state and off-state characteristics of NPT type IGBT. Breakdown voltage of designed IGBT was higher than 1200V when we optimized Field Limiting Ring structures. And also, on-state voltage characteristics was shown less then 2.5V at 25A of drain current.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.300-304
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• 2004

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.485-486
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• 2015

This paper introduces the new 1200V $SPM^{(R)}$ (Smart Power Module), which is fully optimized and intelligent integrated IGBT inverter modules for up to 6kW motor drive applications. It utilizes newly developed NPT trench IGBT with the advanced STEALTHTM freewheeling diode, and built-in bootstrap diode. HVICs, multi-function LVIC, and built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC(Direct Bonded Copper) substrate for the better thermal performance. This paper provides an overall description of the newly developed 1200V/35A $SPM^{(R)}$ 2 product.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.157-158
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• 2018

본 논문은 3상 AC 모터와 영구동기자석 모터제어를 위한 새로운 1200V, 5A/10A 지능형 전력반도체 모듈(Intelligent Power Module, IPM) 제품을 소개한다. 이 전력 모듈은 DIP(Dual in line)패키지의 DBC(Direct Bond Copper)로 구성되어 있으며 Silicon on Insulator, SOI type의 6 채널 게이트 드라이브와 6개의 IGBT, Diode로 구성되어 있다. 본 논문에서는 1200V, 5A/10A 의 새로운 전력반도체의 전기적 특성 및 드라이빙 퍼포먼스를 소개한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.63-63
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to observe static DC characteristics, such as a threshold voltage ($V_{TH}$) and a figure of merit ($V_B^2/R_{SP,ON}$). To optimize the static DC characteristics, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. Design parameters are optimized using 2D numerical simulations and the 4H-SiC DMOSFET structure results in high figure of merit ($V_B^2/R_{SP,ON}$>~$340MW/cm^2$) for a power MOSFET in $V_B{\sim}1200V$ range.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.249-252
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• 1993

On Concerning to the Bushing for the High Voltage Transformer and GCB & GIS which we have imported of all type owing to the insufficiency of internal production facilities and the want of technology, our research team succeeded in the development of the 72.5kV/1200A Gas Bushing for GCB & GIS. We carried out the dimensions & visual tests and the mechanical & electrical tests, and we have got the favorable test-results.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.367-371
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• 2010

본 논문에서는 1200V, 50A급의 컨버터 인버터 일체형 12-스위치 저 손실 지능형 전력모듈을 소개한다. 게이트 구동회로, 보호회로, IGBT 모듈을 통합한 이 전력모듈은 최적의 게이트 구동회로, 시스템 고밀도화 그리고 인피니언의 트렌치 필드스톱2 IGBT와 FRD를 사용한 높은 효율의 컨버터와 인버터 일체형으로 구현하였다. 본 논문을 통해 높은 파워가 요구되는 가전기기, 산업용 인버터의 애플리케이션에 적합하게 설계된 전력모듈에 대한 소개와 함께 그 특징 및 시스템 구성을 위한 고려사항에 대하여 기술하였다.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.218-224
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• 1998

2nO and $Al_{2}O_{3}$ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at $900^{\circ}C{\sim}1200^{\circ}C$ for 3 h in vacuum($3{\times}10^{-5}$ Torr). According to XRD, remnant ZnO and $Al_{2}O_{3}$ not converted to $ZnAl_{2}O_{4}$ were observed up to $1100^{\circ}C$, which were completely changed to$ZnAl_{2}O_{4}$ ternary compound at $1200^{\circ}C$. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at $1200^{\circ}C$.