• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.174-178
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• 2017

The reactions of thermal hydrogen atoms H(g) with the Ge(100) surface were examined with temperature-programmed desorption (TPD) mass spectrometry. Concomitant $H_2$ and $CH_4$ TPD spectra taken from the H(g)-irradiated Ge(100) surface were distinctly different for low and high H(g) doses/substrate temperatures. Reactions suggested by our data are: (1) adsorbed mono(${\beta}_1$)-/di-hydride(${\beta}_2$)-H(a) formation; (2) H(a)-by-H(g) abstraction; (3) $GeH_3$(a)-by-H(g) abstraction (Ge etching); and (4) hydrogenated amorphous germanium a-Ge:H formation. While all these reactions occur, albeit at higher temperatures, also on Si(100), H(g) absorption by Ge(100) was not detected. This is in contrast to Si(100) which absorbed H(g) readily once the surface roughened on the atomic scale. While this result is rather against expectation from its weaker and longer Ge-Ge bond as well as a larger lattice constant, we attribute the absence of direct H(g) absorption to insufficient atomic-scale surface roughening and to highly efficient subsurface hydrogenation at moderate (>300 K) and low (${\leq}300K$) temperatures, respectively.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.161-165
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• 1993

The geometrical and electronic structure of epitaxially grown Ge on Si(100) and Si(111) surfaces has been studied by scanning tunneling microscopy. Since Ge atoms could be distinguished from Si atoms by scanning tunneling spectroscopy and voltage dependent STM images, the growth mode of the added layer could be studied. On the (100) surface with a (2${\times}$1) reconstruction, Ge overlayer grow preferentially on the B type step edges at 720K. On the (111) surface, Ge overlayer also grow on the step edges with (7${\times}$7) and (5${\times}$5) structure depending on their coverage and annealing temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.153-157
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• 2011

We have investigated the effect of inductively coupled plasma (ICP) treatment on the early growth stage of heteroepitaxial Ge layers grown on Si(100) substrates using low pressure chemical vapor deposition (LPCVD), The Si(100) substrates were treated by ICP process with various source and bias powers, followed by the Ge deposition, The ICP treatment led to the enhancement in the coalescence of Ge islands, The growth rate of Ge on Si(100) with ICP surface treatment is about 5 times higher than that without ICP surface treatment. A missing dimer caused by the ICP surface treatment can act as a nucleation site for Ge adatoms, which could be responsible for the improvement in growth behavior of Ge on Si(100) substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.135-135
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• 2013

The electronic and adsorption structures of Mg and p-tert-butylcalix[4]arene (p-TBCA) adsorbed onto a Ge(100) surface under a variety of sample conditions were characterized using high-resolution photoemission spectroscopy (HRPES) and their corresponding DFT calculation results. Interestingly, after 0.10 ML p-TBCA molecules had been adsorbed onto a Ge(100) surface, subsequent adsorption of a small amount of metallic Mg (~0.10 ML) resulted in the formation of a capped structure inside the pre-adsorbed p-TBCA molecules. The adsorption structures resulting from further deposition of Mg (~0.50 ML) onto the Ge(100) surface were monitored based on the surface charge state and Mg 2s core level spectrum. Work function measurements clearly indicated the electronic structures of the Mg and p-TBCA adsorbed onto the Ge(100) surface. Moreover, we confirmed that three different adsorption structures are experimentally favorable at room temperature through DFT calculation results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.136-136
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• 2013

High-resolution photoemission spectroscopy (HRPES) measurements were collected and density functional theory (DFT) calculations were conducted to track the coverage dependent variation of the absorption structure of 2-thiophenecarboxaldehyde (C4H3SCHO: TPCA) on the Ge(100) surface at room temperature. In an effort to identify the most probably adsorption structures on the Ge(100) surface, we deposited TPCA molecules at a low coverage and at a high coverage and compared the differences between the electronic features measured using HRPES. The HRPES data provided three possible adsorption structures of TPCA on the Ge(100) surfaces, and DFT calculations were used to determine the plausibility of the structures. HRPES analysis, corroborated by DFT calculations, indicated that an S-dative bonded structure was the most probable adsorption structure at relatively lower coverage levels, the [4+2] cycloaddition structure was the second most probable structure, and the [2+2]-C=O cycloaddition structure was the last probable structure on the Ge(100) surfaces at relatively higher coverage levels.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.109.1-109.1
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• 2015

Understanding the reaction mechanisms and structures underlying the adsorption of biomolecules on semiconductors is important for functionalizing semiconductor surfaces for various bioapplications. Herein, we describe the characteristic behavior of a primary nucleobase adsorbed on the semiconductor Ge(100). The adsorption configuration of guanine, a primary nucleobase found in DNA and RNA, on the semiconductor Ge(100) at an atomic level was investigated using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. When adsorbed on Ge(100) at room temperature, guanine appears dark in STM images, indicating that the adsorption of guanine on Ge(100) occurs through N-H dissociation. In addition, DFT calculations revealed that "N(1)-H dissociation through an O dative bonded structure" is the most favorable adsorption configuration of all the possible ones. We anticipate that the characterization of guanine adsorbed on Ge(100) will contribute to the development of semiconductor-based biodevices.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3217-3220
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• 2010

The electronic structures and bonding configuration of histidine on Ge(100) have been investigated with various sample treatments using core-level photoemission spectroscopy (CLPES). Interpretation of the Ge 3d, C 1s, N 1s, and O 1s core level spectra being included in these systems revealed that both the imino nitrogen in the imidazole ring and the carboxyl group in the glycine moiety concurrently participate in the adsorption of histidine on a Ge(100) surface at 380 K. Moreover, we could clearly confirm that the imino nitrogen with a free lone pair in the imidazole group adsorbs on Ge(100) more strongly than the carboxyl group in the glycine moiety by examining systems annealed at various temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.78-78
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• 2010

The Adsorption structures of phenylalanine on Ge(100) surface have been investigated as a function of coverage using high-resolution photoemission spectroscopy (HRPES) and density functional (DFT) calculation. To converge these experimental and theoretical conclusion, we systematically performed HRCLPES measurements and DFT calculation for various coverage in the adsorption structures of phenylalanine molecules on the Ge(100) surface. In this study, we found two different adsorption structure as a function of coverage in phenylalanine on Ge(100), monitoring three core level spectra (Ge 3d, C 1s, N 1s, and O 1s) using HRPES Through analysis of the binding energies, we confirmed that O-H dissociated and N dative-bonded structure emerges at low coverage (0.10 ML), which is the same to the result of glycine and alanine on Ge(100) system, whereas O-H dissociation structure also appears at higher coverage. Moreover, we observed the shape of phenyl group being included in phenylalanine is changed from flat to tilting structure at final state using DFT calculation. Through the spectral analysis for phenylalanine, we will demonstrate variation of coverage dependent structural change for phenylalanine on Ge(100) surface using experimental (HRPES) and theoretical studies (DFT calculation).

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.124-127
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• 2005

Rewritable optical memory devices such as an CD-RW and DVD+RW are data storage media, which take advantage of the different optical properties in the amorphous and crystalline states of phase change materials. The switching property, structural transformation, transformation kinetics and chemical bindings of $Ge_xSb_{100-x}$($6{\le}x{\le}$34) were studied to investigate the feasibility of applying $Ge_xSb_{100-x}$ alloys in optical memory. The $Ge_xSb_{100-x}$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, inductively coupled plasma atomic emission spectrometer (ICP-AES) and atomic force microscopy (AEM). Optimum fiim composition of $Ge_xSb_{100-x}$ was studied and its minimum time fur laser induced crystallization and optical contrast fur phase transition was performed. These results might be correlated with the binding energies between Ge and Sb, and indicate that $Ge_xSb_{100-x}$ have an potential far optical memory applications.

• Korean Journal of Medicinal Crop Science
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• v.3 no.3
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• pp.251-258
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• 1995

This study was carried out to find optimum concentration of germanium compounds and pH of medium on the induction and growth of callus from A. keiskei and P. ginseng and to intend to increase Ge. absorption by calli while those calli were subculturing on MS medium. Callus from a. keiskei was rarely induced under light condition. Under dark condition, callus in­duction from A. keiskei was good up to 5ppm, retarded at 50ppm of $GeO_2$, or C. E. Ge. O., and rarely done at 100 ppm of $GeO_2$ but was somewhat well at 100 ppm of C. E. Ge. O. The induction and growth of callus was good in order of pH 5. 7 > pH 5. 4 > pH 6. 0 Under light condition, the growth of callus induced from P. ginseng was poor at $1{\sim}10\;ppm$ of $GeO_2$, or C. E. Ge. O., but shooting from callus occurred frequently. Under dark condtion, the growth of callus from A. keiskei was good up to 5 ppm of $GeO_2$, or C. E. Ge. O. and was rarely done at 50 ppm of $GeO_2$, but was somewhat well even at 100 ppm of C. E. Ge. O. Shooting from callus occurred frequently in a. keiskei, especially at pH 5.7. The growth of callus from P. ginseng was poor at 10 ppm of $GeO_2$, or 50 ppm of C. E. Ge. O. Under dark condition, the amount of Ge absorption by callus induced from A. keiskei was much high­er than that from P. ginseng. The amount of Ge. absorption by callus treated with $GeO_2$, was higher than that treated with C. E. Ge. O.