• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.6
• /
• pp.501-506
• /
• 2006

Carbon nanotubes (CNTs) were grown with a microwave plasma enhanced chemical vapor deposition (MPECVD) method, which has been regarded as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. MPECVD used methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 10 nm thick Ni catalytic layer were deposited on the Ti coated Si substrate by RF magnetron sputtering method. In this work, the pretreatment was that the Ni catalytic layer in different microwave power (600, 700, and 800 W). After that, CNTs deposited on different pressures (8, 12, 16, and 24 Torr) and grown same microwave power (800 W). SEM (Scanning electron microscopy) images showed Ni catalytic layer diameter and density variations were dependent with their pretreatment conditions. Raman spectroscopy of CNTs shows that $I_D/I_G$ ratios and G-peak positions vary with pretreatment conditions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.163-163
• /
• 2010

중적외선 영역 ($3{\sim}5\;{\mu}m$)은 공기 중에 존재하는 이산화탄소나 수증기에 의해 흡수가 일어나지 않기 때문에 군사적으로 중요한 파장 영역이며, 야간에 적을 탐지하는데 응용되고 있다. InSb는 77 K에서 중적외선 파장 흡수에 적합한 밴드갭 에너지 (0.228 eV)를 갖고 있으며, 다른 화합물 반도체와 달리 전하 수송자 이동도 (전자: $10^6\;cm^2/Vs$, 정공: $10^4\;cm^2/Vs$)가 매우 빠르기 때문에 적외선 화상 감지기 재료로 매우 적합하다. 또한 현재 중적외선 영역대에서 널리 사용되는 HgCdTe (MCT)와 대등한 소자 성능을 나타냄과 동시에 낮은 기판 가격, 소자의 제작 용이성 때문에 MCT를 대체할 물질로 주목 받고 있다. 하지만, 기판과 절연막의 계면에 존재하는 결함 때문에 에너지 밴드갭 내에 에너지 준위를 형성하여 높은 누설 전류 특성을 보인다. 따라서 InSb 적외선 소자의 구현을 위하여 고품질의 절연막의 연구가 필수적이라고 할 수 있겠다. 절연막의 특성을 알아보기 위해, n형 InSb 기판에 플라즈마 화학 기상 증착법 (PECVD)을 이용하여 $SiO_2$, $Si_3N_4$를 증착하였으며, 증착 온도를 $120^{\circ}C$에서 $240^{\circ}C$까지 $40^{\circ}C$ 간격으로 변화하여 증착온도가 미치는 영향에 대하여 알아보았다. 절연막과 기판의 계면 특성을 분석하기 위하여 77 K에서 커패시턴스-전압 (C-V) 분석을 하였으며, 계면 트랩 밀도는 Terman method를 이용하여 계산하였다 [1]. $Si_3N_4$를 증착하였을 경우, $120{\sim}240^{\circ}C$의 증착 온도에서 $2.4{\sim}4.9{\times}10^{12}\;cm^{-2}eV^{-1}$의 계면 트랩 밀도를 가졌으며, 증착 온도가 증가할수록 계면 트랩 밀도가 증가하는 경향을 보였다. 또한 모든 증착 온도에서 flat band voltage가 음의 전압으로 이동하였다. $SiO_2$의 경우 $120{\sim}200^{\circ}C$의 증착온도에서 $7.1{\sim}7.3{\times}10^{11}\;cm^{-2}eV^{-1}$의 계면 트랩 밀도 값을 보였으나, $240^{\circ}C$ 이상에서 계면 트랩밀도가 $12{\times}10^{11}\;cm^{-2}eV^{-1}$로 크게 증가하였다. $SiO_2$ 절연막을 사용함으로써, $Si_3N_4$ 대비 약 25% 정도 낮은 계면 트랩 밀도를 얻을 수 있었으며, 모든 증착 온도에서 양의 전압으로 flat band voltage가 이동하였다. 두 절연막에 대한 계면 트랩의 원인을 분석하기 위하여 XPS 측정을 진행하였으며, 깊이에 따른 조성 분석을 하였다. 본 실험에서 최적화된 $SiO_2$ 절연막을 이용하여 InSb 소자의 pn 접합 연구를 진행하였다. Be+ 이온 주입을 진행하고, 급속열처리(RTA) 공정을 통하여 p층을 형성하였다. -0.1 V에서 16 nA의 누설 전류 값을 보였으며, $2.6{\times}10^3\;{\Omega}\;cm^2$의 RoA (zero bias resistance area)를 얻을 수 있었다.

• Korean Chemical Engineering Research
• /
• v.46 no.3
• /
• pp.619-625
• /
• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.14 no.5
• /
• pp.887-892
• /
• 2019

In this study, after 20nm-thick $SiO_2$ thin film was deposited by PECVD method on the PES substrate, which is known to have the highest heat resistance among plastic substrates, as a buffer layer, ITZO thin films were deposited by RF magnetron sputtering method to investigate the electrical and optical properties according to the working pressure. The ITZO thin film deposited at the working pressure of 3mTorr showed the best electrical properties with a resistivity of $8.02{\times}10^{-4}{\Omega}-cm$ and a sheet resistance of $50.13{\Omega}/sq.$. The average transmittance in the visible region (400-800nm) of all ITZO films was over 80% regardless of working pressure. The Figure of merit showed the largest value of $23.90{\times}10^{-4}{\Omega}^{-1}$ in the ITZO thin film deposited at 3mTorr. This study found that ITZO thin films are very promising materials to replace ITO thin films in next-generation flexible display devices.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.16 no.3
• /
• pp.443-450
• /
• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• Korean Chemical Engineering Research
• /
• v.46 no.2
• /
• pp.389-396
• /
• 2008

The effect of thermal cycling on bond strength and residual stress at the interface between benzocyclobutene (BCB) and plasma enhanced chemical vapor deposited (PECVD) silicon dioxide ($SiO_2$) coated silicon wafers were evaluated by four point bending and wafer curvature techniques. Wafers were bonded using a pre-established baseline process. Thermal cycling was done between room temperature and a maximum peak temperature. In thermal cycling performed with 350 and $400^{\circ}C$ peak temperature, the bond strength increased substantially during the first thermal cycle. The increase in bond strength is attributed to the relaxation in residual stress by the condensation reaction of the PECVD $SiO_2$: this relaxation leads to increases in deformation energy due to residual stress and bond strength.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.3
• /
• pp.77-81
• /
• 2020

Commercialization of flexible OLED displays, such as rollable and foldable displays, has attracted tremendous interest in next-generation display markets. However, during bending deformation, cracking and delamination of thin films in the flexible display panels are the critical bottleneck for the commercialization. Therefore, measuring mechanical properties of the fragile thin films in the flexible display panels is essential to prevent mechanical failures of the devices. In this study, tensile properties of the metal and ceramic nano-thin films were quantitatively measured by using a direct tensile testing method on the water surface. Elastic modulus, tensile strength, and elongation of the sputtered Mo, MoTi thin films, and PECVD deposited SiN_x thin films were successfully measured. As a result, the tensile properties were varied depending on the deposition conditions and the film thickness. The measured tensile property values can be applied to stress analysis modeling for mechanically robust flexible displays.

• Journal of Korean Society of Environmental Engineers
• /
• v.34 no.10
• /
• pp.702-708
• /
• 2012

Tetrafluoromethane ($CF_4$) has been used as etching and Chemical Vapor Deposition (CVD) gases for semiconductor manufacturing processes. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetimes which cause the global warming effect. Also, the wastewater including the fluorine is caused by of the ground water pollution. Long-term consumption of water containing excessive fluoride can lead to fluorosis of the teeth and bones. The wastewater including the fluorine among the by-product which is generated by using the waterjet plasma after destroying $CF_4$ by HF is generated. The system which can remove the hydrogen fluoride among the wastewater by using the electrocoagulation using this wastewater the aluminum electrode was developed. The operating condition such as initial pH, electrocoagulation time, wastewater flow rate, current density were investigated experimentally using a electrocoagulation. Through the parametric studies, the highest hydrogen fluoride destruction of 85% was achieved at 3.5 initial pH, 10 min electrocoagulation time, 10 mL/min wastewater flow rate and $159A/m^2$ current density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.333-334
• /
• 2007

Diamond-like carbon (DLC)박막은 높은 경도, 화학적 안정성, 높은 광 투과성을 가지고 있어, 공구강, 광학렌즈 및 플라스틱의 보호 코팅을 위해 응용되어진다. 본 연구에는 DLC 박막은 Silicon을 기반으로 하는 태양전지 반사 반지막으로 응용을 위해, 13.56 MHz RF 플라즈마 화학기상 증착 (RF-PECVD)법을 통해 합성되었다. DLC 합성 시 RF power는 150 W, 메탄 (CH4)가스의 유량은 6%~10% 조절되었다. 합성되어진 DLC 박막의 광학적 특성은 UV spectrometry, Ellipsometry를 사용하여 분석되었고, 경도는 Nano-indenter를 사용하여 측정되었다. 측정 결과 투과도와 굴절률 등의 광학적 특성은 탄소 조성비가 6%정도에서 가장 좋은 결과 값을 얻었으나, 물리적 특성인 경도는 탄소 조성비가 높을수록 증가하는 경향을 보였으며, Si기판과의 접착력은 32N 이상의 높은 값을 나타내었다. 결과로써, DLC 박막은 합성시 적절한 탄소 조성비를 통해 silicon을 기반으로 하는 태양전지 반사방지막으로 응용할 수 있다.

• Journal of the Korean Ceramic Society
• /
• v.39 no.2
• /
• pp.171-177
• /
• 2002

In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.