• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.10-14
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• 2008

We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of $950^{\circ}C$. The Ar and $NH_3$ flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VLS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.

• Journal of the Korea Concrete Institute
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• v.15 no.3
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• pp.425-432
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• 2003

The joint treatment of concrete is one of the technical problems in concrete constructions. Joints created with concrete constructions result in serious weakness in the aspects of both structural and water-barrier function. The radar and the infrared thermography method have been used for the non-destructive inspection of several construction joints of concrete structures in this study. The advantages and limitations of these methods are investigated for non-destructive inspection on construction joints of concrete columns. It can be shown that the detecting precision of construction joints using these methods is improved if radar analysis is carried out with a simulation analysis. In case of the infrared thermography method, the shape of construction joints can be also detected when heating is performed before testing. As the result, it has been verified that the construction joints, difficult to be detected by visual inspection, could be inspected effectively in broad areas at short period of time when these two methods are applied.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.152-152
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• 1999

1Gb급 이상 기억소자의 캐패시터 재료로 주목받고 있는 (Ba,Sr)TiO3 [BST] 박막의 전극재료로는 Pt, Ru, Ir과 같은 금속전극과 RuO2, IrO2와 산화물 전도체가 유망한 것으로 알려져 있다. 그런데, DRAM의 집적도가 증가하게 되면, BST같은 고유전율 박막을 유전재료로 사용한다 하더라도, 3차원적인 구조가 불가피하게 때문에 기존의 sputtering 방법으로는 우수한 단차피복성을 얻기 힘들므로, MOCVD법이 필수적이다. 본 연구에서는 기존에 연구되었던 Pt에 비해 식각특성이 우수하고, 비교적 낮은 비저항을 갖는 Ru 박막증착에 대한 연구를 행하였다. 본 연구에서는 수직형의 반응기와 저항 가열 방식의 susceptor로 구성된 저압 유기금속 화학증착기를 사용하여 최대 6inch 직경을 갖는 기판 위에 Ru박막을 증착하였다. Precursor로는 기존에 연구된 적이 없는 bis-(ethyo-$\pi$-cyclopentadienyl)Ru (Ru(C5H4C2H5)2, [Ru(EtCp)2])를 사용하였으며, bubbler의 온도는 85$^{\circ}C$로 하였다. Si, SiO2/Si를 사용하였으며, 증착온도 25$0^{\circ}C$~40$0^{\circ}C$, 증착압력 3Torr의 조건에서 Ru 박막을 증착하였다. Presursor를 운반하는 수송기체로는 Ar을 사용하였으며, carbon과 같은 불순물의 제거를 위해 O2를 첨가하였다. 증착된 박막은 XRD, SEM, 4-point probe등을 통해 구조적, 전기적 특성을 평가하였으며, 열역학 계산을 위해서는 SOLGASMIX-PV프로그램을 사용하였다. Ru 박막의 증착에 있어서 산소의 첨가는 필수적이었으며, Ru 박막의 증착속도는 30$0^{\circ}C$~40$0^{\circ}C$의 온도 영역에서 200$\AA$/min으로 일정하였으며, 첨가된 산소의 양이 적을수록 더 치밀하고 평탄한 표면형상을 보였으며, 또한 더 낮은 전기 전도도를 보였다. 그리고 증착된 박막은 12~15$\mu$$\Omega$cm 정도의 낮은 비저항 값을 나타냈으며 이것은 기존의 sputtering 법에 의해 증착된 Ru 박막의 비저항 값들과 비교될만하다. 한편, 높은 온도, 높은 산소분압 조건에서 RuO2의 형성을 관찰하였으며, 이것은 열역학적인 계산을 통해서 잘 설명할 수 있었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.10
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• pp.21-26
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• 2016

This study evaluates the magnitudes and distributions of contact tangential forces with the swaging depth of punch acting at the contact surfaces between a rotor core slot and a Cu bar during a sequential rotor core swaging process. The effects of the core slot shape on the magnitudes and distributions of the total contact forces were investigated to improve the productivity of the rotor core swaging process. Parametric elastic-plastic numerical analyses were performed using simplified two-dimensional cyclic symmetric plane strain models to evaluate the contact force distributions at the contact surfaces. The numerical analysis results show that the total contact tangential forces increased by about 55% with the adjacent Cu bar swaging process. The length of the core slot is a dominant factor in the core slot design as result of the increased total contact tangential forces during the swaging process of the rotor core.

• Journal of Convergence for Information Technology
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• v.12 no.2
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• pp.149-156
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• 2022

In this paper, it was attempted to form a titanium (Ti: Titanium) thin film using the atmospheric pressure plasma process technology for the conductor, which is the main component of the optical sensor. The atmospheric plasma equipment was remodeled. A 4-inch Ti target for sputter was etched using CF4 gas, and the by-product was coated on a glass sample. These by-products were formed up to about 2 cm, and could be divided into 15 areas according to color. Surface shape and constituent elements were analyzed using scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS), respectively. Electrical properties using 4-point probe equipment were also measured. If the process is performed by positioning the sample at about 4.5 mm to 5 mm from the target, a uniform Ti thin film will be deposited. However, it was found that the thin film contained a significant amount of fluorine, which greatly affects the electrical properties of the thin film. Therefore, additional experiments and studies should be performed to remove or minimize fluorine during deposition.

• Clinical and Experimental Pediatrics
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• v.51 no.1
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• pp.54-61
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• 2008

Purpose : This study was designed to clarify the mechanism of proteinuria in nephrotic syndrome patients by using puromycin aminonucleoside (PAN) nephrosis model. Methods : Following administration of various concentrations of PAN and antioxidants we observed the changes of podocyte cytoskeletons in cultured rat glomerular epithelial cells (GEpC) by method of scanning electron microscope, reactive oxyten species (ROS) analysis, permeability assay, confocal microscope, and Western blot assay. Results : PAN not only induced the ultrastructural changes of GEpC, such as shortening and fusion of microvilli, but also separated the intercellular gaps and linear ZO-1. PAN induced oxidative stresses in time and dose dependent manners and increases of intercellular permeability in anti-oxidants inhibitable manners. High concentration of PAN induced not only actin polymerization and disorganization, but also the conglomerulation and internal dislocation of ${\alpha}-actinin$ protein. The intensities of fluorescences of ZO-1 protein were diminished and internalized by PAN in a dose-dependent manner, which were inhibited by anti anti-oxidants. Conclusion : PAN induced the changes of podocytes cytoskeleton and junctional barriers by way of increasing ROS in GEpC that resulted in increasing their permeability in a antioxidatn-inhibitable manner. Glomerular hyperpermeability induced by PAN mediateing through oxidative stresses is thought to take part in the mechanism of proteinuria in nephrotic syndrome.

• 한국해양학회지
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• v.25 no.2
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• pp.62-73
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• 1990

An experimental study is performed in order to catch the characteristics of the flow field at arrested salt wedge, using a rectangular open channel. Arrested salt wedge is generally so stable that the observations are easy, but velocities and interfacial waves are measured with the aid of visualization method, by injection of fluorescent dyes. The density interface, which is defined as the zone of maximum density variation with depth, exists in about 0.5 cm below the visual interface, and vertical density profile is quite well satisfied with Homeborn model. Interfacial layer has high turbulent intensity and its thickness decreases as the overall Richardson number increases and has magnitude of roughly 17% of upper layer. Cross-sectional velocity distribution just shows the influence of a side-wall friction and in the upper layer vertical velocity profile also becomes uniformly as Reynolds number increases, but in the lower layer it shows nearly parabolic type. Supposes that we divide salt wedge into three domains, that is, river mouth, intermediate and tip zone, entertainment coefficient is small at the intermediate zone and large at the river mouth and the tip zone. River mouth or intermediate zone has comparatively stable interface and capillary wave therefore s produced and propagated downstream. On the other hand, tip zone is very unstable, cusping ripple or bursting ripple is then produced incessantly. Arrested salt wedge form is nearly linear and has no relation to densimetric Froude number and Reynolds number.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.406-406
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• 2010

일반적으로, 나노스케일의 MOS 소자에서는 게이트 절연체 두께가 감소함에 따라 tunneling effect의 증가로 인해 PID (plasma induced damage)로 인한 소자 특성 저하 현상을 감소하는 추세로 알려져 있다. 하지만 요즘 많이 사용되고 있는 high-k 게이트 절연체의 경우에는 오히려 더 많은 charge들이 trapping 되면서 PID가 오히려 더 심각해지는 현상이 나타나고 있다. 이러한 high-k 게이트 식각 시 현재는 주로 Hf-based wet etch나 dry etch가 사용되고 있지만 gate edge 영역에서 high-k 게이트 절연체의 undercut 현상이나 PID에 의한 소자특성 저하가 보고되고 있다. 본 연구에서는 이에 차세대 MOS 소자의 gate stack 구조중 issue화 되고 있는 metal gate 층과 gate dielectric 층의 식각공정에 각각 중성빔 식각과 중성빔 원자층 식각을 적용하여 전기적 손상 없이 원자레벨의 정확한 식각 조절을 해줄 수 있는 새로운 two step 식각 공정에 대한 연구를 진행하였다. 먼저 TiN metal gate 층의 식각을 위해 HBr과 $Cl_2$ 혼합가스를 사용한 중성빔 식각기술을 적용하여 100 eV 이하의 에너지 조건에서 하부층인 $HfO_2$와 거의 무한대의 식각 선택비를 얻었다. 하지만 100 eV 조건에서는 낮은 에너지에 의한 빔 스케터링으로 실제 패턴 식각시 etch foot이 발생되는 현상이 관찰되었으며, 이를 해결하기 위하여 먼저 높은 에너지로 식각을 진행하고 $HfO_2$와의 계면 근처에서 100 eV로 식각을 해주는 two step 방법을 사용하였다. 그 결과 anistropic 하고 하부층에 etch stop된 식각 형상을 관찰할 수 있었다. 다음으로 3.5nm의 매우 얇은 $HfO_2$ gate dielectric 층의 정확한 식각 깊이 조절을 위해 $BCl_3$와 Ar 가스를 이용한 중성빔 원자층 식각기술을 적용하여 $1.2\;{\AA}$/cycle의 단일막 식각 조건을 확립하고 약 30 cycle 공정시 3.5nm 두께의 $HfO_2$ 층이 완벽히 제거됨을 관찰할 수 있었다. 뿐만 아니라, vertical 한 식각 형상 및 향상된 표면 roughness를 transmission electron microscope(TEM)과 atomic force microscope (AFM)으로 관찰할 수 있었다. 이러한 중성빔 식각과 중성빔 원자층 식각기술이 결합된 새로운 gate recess 공정을 실제 MOSFET 소자에 적용하여 기존 식각 방법으로 제작된 소자 결과를 비교해 본 결과 gate leakage current가 약 one order 정도 개선되었음을 확인할 수 있었다.

• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.327-333
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• 2008

In general, a lens with large NA makes image quality better. There are many kinds of cheap concave mirrors with large aperture and NA. This paper presents a method that uses a large aperture projection imaging system to enhance the image used for 3D shape measurement. This method makes it possible to enhance reflection uniformity on the object surface and increases SNR (Signal to Noise Ratio). Using a large aperture lens, it is possible to obtain a brighter image, reducing the shading nature in the image boundary, and enhancing the reflection uniformity even on woven surfaces. Because of the exorbitant cost of a large aperture projection lens larger than 150 mm in diameter, a refractive lens was exchanged with a concave mirror resulting in the same optical effect. In experiment, changing NA $0.15{\sim}0.8$, image contrast was enhanced from 46 to 1.33. Incidentally, the effect of the concave mirror was tested successfully through the experiment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.135-139
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• 2014

The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.