• Title/Summary/Keyword: 폴라

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A novel TIGBT tructure with improved electrical characteristics (향상된 전기적 특성을 갖는 트렌치 게이트형 절연 게이트 바이폴라 트랜지스터에 관한 연구)

  • Koo, Yong-Seo;Son, Jung-Man
    • Journal of IKEEE
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    • v.11 no.4
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    • pp.158-164
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    • 2007
  • In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.

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A Comparison Study of Input ESD Protection schemes Utilizing Thyristor and Diode Devices (싸이리스터와 다이오드 소자를 이용하는 입력 ESD 보호방식의 비교 연구)

  • Choi, Jin-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.4
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    • pp.75-87
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    • 2010
  • For two input-protection schemes suitable for RF ICs utilizing the thyristor and diode protection devices, which can be fabricated in standard CMOS processes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit for an input HBM test environment of a CMOS chip equipped with the input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain the characteristic differences of two protection schemes as an input ESD protection circuit for RF ICs, and suggest valuable guidelines relating design of the protection devices and circuits.

Antioxidant activity and neuroprotective effects of ethanol extracts from the core of Diospyros kaki (감 심지 에탄올 추출물의 항산화 활성 및 신경세포 보호 효과)

  • Byun, Eui-Baek;Kim, Min-Jin;Kim, Soon-Jung;Oh, Nam-Soon;Park, Sang-Hyun;Kim, Woo Sik;Song, Ha-Yeon;Han, JeongMoo;Kim, Kwangwook;Byun, Eui-Hong
    • Korean Journal of Food Science and Technology
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    • v.52 no.1
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    • pp.60-66
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    • 2020
  • This study examined the antioxidant activity and neuroprotective effects of ethanol extracts obtained from Diospyros kaki core (DCE). The total polyphenol and flavonoid contents in DCE was 786.47±15.27 and 31.14±0.82 mg/g, respectively. In addition, DCE exhibited a dose-dependent induction of radical scavenging activity, determined by 1,1-diphenyl-picrylhydrazyl (DPPH), 2,2'-azino-bis-(3-ethylbenzothiazoline-6-sulfonicacid) (ABTS), ferric reducing antioxidant power (FRAP), and reducing power assays. The viability of HT22 hippocampal cells was examined to investigate the neuroprotective effect of DCE. DCE treatment did not induce cytotoxicity at concentrations below 1,000 ㎍/mL. Additionally, DCE treatment in the background of H2O2 induce oxidative stress revealed a significant increase in the survival rat, indicated by increased SOD activity and decreased levels of MDA, a lipid peroxidation product. Therefore, the results suggest that DCE can be used as a source of natural antioxidants source and a therapeutic agent for the treatment of brain disorders induced by oxidative stress and neuronal damage.

Single-Camera Micro-Stereo 4D-PTV (단일카메라 마이크로 스테레오 4D-PTV)

  • Doh, Deog-Hee;Cho, Young-Beom;Lee, Jae-Min;Kim, Dong-Hyuk;Jo, Hyo-Jae
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.34 no.12
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    • pp.1087-1092
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    • 2010
  • A micro 3D-PTV system has been constructed using a single camera system. Two viewing holes were created behind the object lens of the microscopic system to construct a stereoscopic viewing image. A hybrid recursive PTV algorithm was used. A concept of epipolar line was adopted to eliminate many spurious candidates. Three-dimensional velocity vector fields were obtained by calculating the three-dimensional displacements of particles that were identified as being identical. The system consists of a laser light source (Ar-ion, 500 mW), one high-definition camera ($1028{\times}1024$ pixels, 500 fps), a circular plate with two viewing holes, and a host computer. The performance of the developed algorithm was tested using artificial images. The characteristic of the vector recovery ratio was investigated for the particle numbers. A micro backward-facing step channel ($H{\times}h{\times}W:\;36{\mu}m{\times}70{\mu}m{\times}3000{\mu}m$) was measured using the developed measurement system. The results were in good qualitative agreement with other results.

A Euclidean Reconstruction of 3D Face Data Using a One-Shot Absolutely Coded Pattern (단일 투사 절대 코드 패턴을 이용한 3차원 얼굴 데이터의 유클리디안 복원)

  • Kim, Byoung-Woo;Yu, Sun-Jin;Lee, Sang-Youn
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.42 no.6
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    • pp.133-140
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    • 2005
  • This paper presents a rapid face shape acquisition system. The system is composed of two cameras and one projector. The technique works by projecting a pattern on the object and capturing two images with two cameras. We use a 'one shot' system which provides 3D data acquired by single image per camera. The system is good for rapid data acquisition as our purpose. We use the 'absolutely coded pattern' using the hue and saturation of pattern lines. In this 'absolutely coded pattern' all patterns have absolute identification numbers. We solve the correspondence problem between the two images by using epipolar geometry and absolute identification numbers. In comparison to the 'relatively coded pattern' which uses relative identification numbers, the 'absolutely coded pattern' helps obtain rapid 3D data by one to one point matching on an epipolar line. Because we use two cameras, we obtain two images which have similar hue and saturation. This enables us to have the same absolute identification numbers in both images, and we can use the absolutely coded pattern for solving the correspondence problem. The proposed technique is applied to face data and the total time for shape acquisition is estimated.

SiGe Alloys for Electronic Device Applications (실리콘-게르마늄 합금의 전자 소자 응용)

  • Lee, Seung-Yun
    • Journal of the Korean Vacuum Society
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    • v.20 no.2
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    • pp.77-85
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    • 2011
  • The silicon-germanium (SiGe) alloy, which is compatible with silicon semiconductor technology and has a smaller band gap and a lower thermal conductivity than silicon, has been used to fabricate electronic devices such as transistors, photodetectors, solar cells, and thermoelectric devices. This paper reviews the application of SiGe alloys to electronic devices and related technical issues. Since the SiGe alloy comprises germanium whose band gap is smaller than silicon, its band gap is also smaller than that of silicon irrespective of the ratio of silicon to germanium. This narrow band gap of SiGe enables the base thickness of bipolar transistors to decrease without a loss in current gain so that it is possible to improve the speed of bipolar transistors by adopting the SiGe-base. In addition, the conversion efficiency of solar cells is enhanced by the absorption of long-wavelength light in the SiGe absorption layer. Phonon scattering caused by the irregular distribution of alloying elements induces the lower thermal conductivity of SiGe than those of pure silicon and germanium. Because a thin film layer with a low thermal conductivity suppresses thermal conduction through a thermal sink, the SiGe alloy is considered to be a promising material for silicon-based thermoelectric systems.

Antioxidant Activity of Pyrus serotina Fruit in Different Cultivars and Parts (배 품종 및 부위별 항산화 활성)

  • Jin, Young-Ook;Song, Won-Seob
    • Korean Journal of Plant Resources
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    • v.25 no.4
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    • pp.498-503
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    • 2012
  • The aim of this study is to compare the total polyphenol, total flavonoid, and antioxidative activity among 5 cultivars of Korean pears cultivated in Korea. As a result of the analysis for the phenolic substance of 5 cultivars, such as Wonwhang, Sunwhang, Whangkeumbae, Chuwhang, and Shingo, the content of total polyphenol was higher in Shingo and Chuwhang, and the content of total flavonoid showed higher levels in Wonwhang and Sunwhang. In addition, this study found that DPPH radical-scavenging ability was the highest in Shingo and that the part of fruit skin showed more favorable reaction to radical ability than fruit flesh. It was also found that much better antioxidative activity was shown for the methanol solvent extraction than for the ethanol solvent extraction. The nitrite-scavenging ability showed the best for Wonwhang and Chuwhang of the cultivars and much better reaction for the methanol solvent extraction than for the ethanol solvent extraction just like the case of DPPH radical-scavenging ability. Further, nitrite-scavenging ability appeared much better reaction for the fruit skin than for the fruit flesh, and antioxidative activity dropped for the higher the range on the pH scale. From the results of this study, Korean pears are worthy of developing as a natural functional food and substance for beauty treatment through the research on bioactivity.

Identification and Chemical Control of Gray Snow Molds Caused by Typhula spp. on Golf Course in Korea (우리나라의 골프코스에서 Typhula spp.에 의해 발생하는 설부병의 동정 및 방제)

  • Kim, Jeong-Ho;Shim, Gyu-Yul;Lee, Hye-Min;Moon, Hyo-Sun;Kim, Young-Ho
    • Asian Journal of Turfgrass Science
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    • v.21 no.2
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    • pp.147-154
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    • 2007
  • In March of 2004, gray snow mold (Typhula blight) caused by Typhula spp. occurred on perennial ryegrass (Lolium perenne L.) and Kentucky bluegrass (Poo pratensis L.) at MuJu golf courses in Jeonbuk Province. Leaves in the affected areas were matted together and frequently covered with white to grayish mycelia. Sclerotia were formed on the leaf blade, leaf sheath, or crown regions. The fungus isolated from the diseased leaf formed whitish mycelium, clamp connections, and light pink to brown, irregular-shaped small sclerotia of less than 1.4 mm in diameter, which are characteristic to Typhula incarnata. Optimum temperature ranges for mycelial growth were $5^{\circ}C$ to $15^{\circ}C$. The causal organism was confirmed to be T. incarnata as the partial sequence of its ribosomal RNA ITS1 (internal transcribed spacer) region was 91% homologous to those of T. incarnata in GenBank database. Out of the 14 fungicides tested fur antifungal activity in vitro, 10 fungicides including iprodione, tebuconazole, polyoxin D, flutolanil, hexaconazole, tolclofos-methyl, fosetyl-Al, mepronil, pencycuron+tebuconazole, and fenarimol completely inhibited fungal growth at their recommended concentrations. In the field test, these fungicides and others such as thifluzamide and thiram effectively controlled the gray snow mold of turfgrass with some variable degrees of control efficacies.

Obstacle Avoidance of Unmanned Surface Vehicle based on 3D Lidar for VFH Algorithm (무인수상정의 장애물 회피를 위한 3차원 라이다 기반 VFH 알고리즘 연구)

  • Weon, Ihn-Sik;Lee, Soon-Geul;Ryu, Jae-Kwan
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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    • v.8 no.3
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    • pp.945-953
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    • 2018
  • In this paper, we use 3-D LIDAR for obstacle detection and avoidance maneuver for autonomous unmanned operation. It is aimed to avoid obstacle avoidance in unmanned water under marine condition using only single sensor. 3D lidar uses Quanergy's M8 sensor to collect surrounding obstacle data and includes layer information and intensity information in obstacle information. The collected data is converted into a three-dimensional Cartesian coordinate system, which is then mapped to a two-dimensional coordinate system. The data including the obstacle information converted into the two-dimensional coordinate system includes noise data on the water surface. So, basically, the noise data generated regularly is defined by defining a hypothetical region of interest based on the assumption of unmanned water. The noise data generated thereafter are set to a threshold value in the histogram data calculated by the Vector Field Histogram, And the noise data is removed in proportion to the amount of noise. Using the removed data, the relative object was searched according to the unmanned averaging motion, and the density map of the data was made while keeping one cell on the virtual grid map. A polar histogram was generated for the generated obstacle map, and the avoidance direction was selected using the boundary value.

Growth of hexagonal Si epilayer on 4H-SiC substrate by mixed-source HVPE method (혼합 소스 HVPE 방법에 의한 4H-SiC 기판 위의 육각형 Si 에피층 성장)

  • Kyoung Hwa Kim;Seonwoo Park;Suhyun Mun;Hyung Soo Ahn;Jae Hak Lee;Min Yang;Young Tea Chun;Sam Nyung Yi;Won Jae Lee;Sang-Mo Koo;Suck-Whan Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.2
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    • pp.45-53
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    • 2023
  • The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.