• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.5
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• pp.418-426
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• 2019

Recently, many studies on vital sign detection using a radar sensor related to Internet of Things(IoT) smart home systems have been conducted. Because vital signs such as respiration and cardiac rates generally cause micro-motions in the chest or back, the phase of the received echo signal from a target fluctuates according to the micro-motion. Therefore, vital signs are usually detected via spectral analysis of the phase. However, the probability of false alarms in cardiac rate detection increases as a result of various problems in the measurement environment, such as very weak phase fluctuations caused by the cardiac rate. Therefore, this study analyzes the difficulties of vital sign detection and proposes an efficient vital sign detection algorithm consisting of four main stages: 1) phase decomposition, 2) phase differentiation and filtering, 3) vital sign detection, and 4) reduction of the probability of false alarm. Experimental results using impulse-radio ultra-wideband radar show that the proposed algorithm is very efficient in terms of computation and accuracy.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Korean Architects
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• no.11 s.427
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• pp.70-71
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• 2004

• Electrical & Electronic Materials
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• v.32 no.5
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• pp.8-17
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• 2019

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.2
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• pp.3-9
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• 2019

• The Optical Journal
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• s.177
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• pp.35-39
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• 2020

• Information Display
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• v.22 no.6
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• pp.50-74
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• 2021

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.345-351
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• 1999

The structures, the energetics, and the spectra of K+(H2O)3 have been studied at HF and MP2 levels with the basis set of triple-zeta plus two sets of polarization functions (TZ2P) for water molecules. Two structures considered are 3+0 (D3), and 2+1 (C2v). The 2+1 (C2v) has two hydrogen bonds between the primary hydration and the secondary hydration shell water molecules. They have similar binding energy and enthalpy. The most stable conformation of K+(H2O)3 is entropy driven as shown in Na+(H2O)5 and in Na+(H2O)6 cases. The 3+0 (D3) conformation is the most stable at 298 K and at 1 atm, based on Gibbs free energy changes (ΔGr). The thermal contributions to the enthalpy and the Gibbs free energy are corrected for the low frequency modes. The corrected ΔGr is in good agreement with the experimental value. Vibrational frequencies of two conformations are revealed as their characteristics.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.8
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• pp.128-138
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• 1996

Based on the virtual stiffness model, the stiffness of a grasped object is characterized. Differing from the previous investigations, the effect of grasp force on the stiffness of a grasp is formulated in terms of additional stiffness, which is called additional stiffness in this paper, and it is addressed how this term affects the stability of a grasp. In addition, a method of controlling the stiffness of a grasp is proposed and validated by experiments using a two-fingered robot hand.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.14 no.4
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• pp.135-140
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• 2004

The ID-based cryptosystem and Power Analysis Attack are attracting many researchers and have been developed aggressively to date. Especially, DPA (Differential Power Analysis) attack has been considered to be the most powerful attack against low power devices, such as smart cards. However, these two leading topics are researched independently and have little hewn relations with each other. In this paper, we investigate the effect of power analysis attack against ID based cryptosystem. As a result, we insist that ID-based cryptosystem is secure against DPA and we only need to defend against SPA (Simple Power Analysis).