• The Korean Journal of Applied Statistics
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• v.8 no.2
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• pp.147-161
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• 1995

The primary objective of this paper is to review parametric models and test statistics related to overdspersion of count data. Poisson or binomial assumption often fails to explain overdispersion. We reviewed real examples of overdispersion in count data that occurred in toxicological or teratological experiments. We also reviewed several models that were suggested for implementing experiments. We also reviewed several models that were suggested for implementing the extra-binomial variation or hyper-Poisson variability, and we noted how these models were generalized and further developed. The approaches that have been suggested for the overdispersion fall into two broad categories. The one is to develop a parametric model for it, and the other is to assume a particular relationship between the variance and the mean of the response variable and to derive a score test staistics for detecting the overdispersion. Recently, Dean(1992) derived a general score test statistics for detecting overdispersion from the exponential family.

• Journal of the Korean Data and Information Science Society
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• v.21 no.4
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• pp.681-688
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• 2010

In statistical process control, the primary method used to monitor the number of nonconformities is the c-chart. The conventional c-chart is based on the assumption that the occurrence of nonconformities in samples is well modeled by a Poisson distribution. When the Poisson assumption is not met, the X-chart is often used as an alternative charting scheme in practice. And EWMA control chart is used when it is desirable to detect out-of-control situations very quickly because of sensitive to a small or gradual drift in the process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.863-865
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도분포에 대한 드레인유도장벽감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자한다. DIBL은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑농도의 분포함수변화에 대하여 DIBL을 관찰하였다. 채널길이, 채널두께, 상하단 게이트 산화막 두께, 하단 게이트 전압 등을 파라미터로 하여 DIBL을 관찰하였다. 결과적으로 DIBL은 채널도핑농도분포함수의 변수인 이온주입범위 및 분포편차에 변화를 나타냈다. 특히 두 변수에 대한 DIBL의 변화는 최대채널도핑농도가 $10^{18}/cm^3$ 정도로 고도핑 되었을 경우 더욱 현저히 나타나고 있었다. 채널길이가 감소할수록 그리고 채널두께가 증가할수록 DIBL은 증가하였으며 하단 게이트 전압과 상하단 게이트 산화막 두께가 증가할수록 DIBL은 증가하였다.

• Journal of Korean Tunnelling and Underground Space Association
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• v.25 no.5
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• pp.373-386
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• 2023

To analyze the prediction of geological conditions and water-bearing zones, TSP was performed in the collapse zone of the fault zone. The results of the TSP were verified by comparing them to the face mapping results of the prediction zone. The rock quality prediction result of the TSP had an error of about 3 to 10 meters compared to the face mapping result, but the overall rock quality change and ground condition were analyzed to be relatively similar. In the water-bearing zones of the face mapping results, the Vp/Vs ratio ranges from 1.79 to 2.37 and the Poisson's ratio ranges from 0.27 to 0.39. In the sections other than the water-bearing zones, the Vp/Vs ratio ranges from 1.61 to 1.89, and the Poisson's ratio ranges from 0.19 to 0.3. As a result of analyzing the Vp/Vs ratio and Poisson's ratio in the water-bearing zones, it is analyzed that the sections with a Vp/Vs ratio of 2.0 or more and a Poisson's ratio of 0.3 or more have a high possibility of being water-bearing zones.

• The Korean Journal of Applied Statistics
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• v.10 no.1
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• pp.105-119
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• 1997

Barnwal and Paul(1988) derived the likelihood ratio statistic and $C(\alpha)$ statistic for testing the equality of the means of several groups of count data in the presence of a common dispersion parameter. These tests are generalized to be applicable without the restriction of a common dispersion parameter. And the assumed model of data is also extended from negative binomial to double exponential Poisson model. Monte Carlo simulations show the superiority of $C(\alpha)$ statistic based on the double exponential Poisson family which has a very simple form and requires estimates of the parameters only under the null hypothesis.

• 도로교통
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• s.94
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• pp.51-64
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• 2003

본 연구는 사고요인과 사고모형의 문헌고찰을 통해 고속도로를 주행하는 버스와 화물차의 사고모형을 개발하고 그 적용방안에 대해 고찰하고자 수행되었다. 고속도로 사고 중 대형차로 인한 차량당 사고율은 승용차보다 월등히 높아 사고의 심각성을 나타내고 있으며, 따라서 이에 대한 별도의 검토가 필요한 시점에 와 있다. 특히 본 연구에 활용된 자료는 비집계된 사상자수로 구간자료를 집합화함으로써 발생하는 문제점을 해소할 수 있다. 모형의 분석기법으로 국내의 경우, 대부분 단순회귀식으로 사고모형을 개발, 적용하여 왔으나 사고수와 사상자수의 특성상 이산적 확률변수로 해석하여 포아송분포와 음이항분포로 적용하는 것이 바람직하다. 따라서 본 연구에서는 버스와 화물차의 사고유형별로 적합한 사고 모형을 개발하여 이로 인한 인사사고 요인에 대한 영향을 분석하고 그 적용방안을 제시하였다. 이러한 연구는 도로설계, 운영, 교통법규, 교통행정 등의 분야에서 거시적인 정책적 방향성을 제시하리라 판단된다. 특히 본 연구는 고속도로 운영주체인 한국도로공사의 고속도로사고조서를 바탕으로 사고유형별 사고모형을 개발, 적용한 것으로 고속도로의 안정성 향상을 위한 제반 정책 수립에 기초자료로 활용될 것으로 기대된다.

• The Korean Journal of Applied Statistics
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• v.7 no.2
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• pp.131-143
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• 1994

Under the asymmetric losses (entropy loss and Stein loss), we find the classes of Bayes and empiricla Bayes estimates for estimating the Poisson means when the distributin of means are believed a priori. Following the idea of Efron and Morris (1973), we have a computer simulation to compute a relative savings loss of proposed estimates as compared to the classical estimates.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.7-14
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• 2006

The finite failure NHPP models proposed in the literature exhibit either constant, monotonic increasing or monotonic decreasing failure occurrence rates per fault. In this paper, we propose the Erlang reliability model, which can capture the increasing nature of the failure occurrence rate per fault. Equations to estimate the parameters of the Erlang finite failure NHPP model based on failure data collected in the form of inter-failure times are developed. For the sake of proposing shape parameter of the Erlang distribution, we used to the goodness-of-fit test of distribution. Data set, where the underlying failure process could not be adequately described by the existing models, which motivated the development of the Erlang model. Analysis of the failure data set which led us to the Erlang model, using arithmetic and Laplace trend tests, goodness-of-fit test, bias tests is presented.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1260-1265
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• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.