• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.104-106
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• 2003

다층의 산화물 박막으로 이루어진 coated conductor의 제조를 위하여 각층의 증착조건이 최적화되어야 한다. 가공/열처리를 통하여 2축배향성을 가지는 Ni 금속 기판위에 $Y_2O_3$, YSZ, $CeO_2$ 등의 산화물 완충층을 증착한 후 초전도층인 YBCO를 증착하였다. 12도와 8도의 in-plane fwhm (full width at half maximum)과 out-of-plane fwhm을 가지는 Ni 기판을 이용하여 13도와 4.5도의 in-plane 및 out-of-plane fwhm을 가지는 YBCO coated conductor를 제조하였다. 임계온도 (Tc), 임계전류 (Ic), 및 임계전류밀도 (Jc) 는 각각 84K, 3.3A, 및 $310,000\;A/cm^2$ 이었다.

• Progress in Superconductivity
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• 제12권1호
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• pp.68-73
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• 2010

Y123 films have been deposited on $LaAlO_3$ (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around $710{\sim}750^{\circ}C$ and working pressures of 10~15 torr. Thick c-axis epitaxial film with the thickness of $0.3{\sim}0.6\;{\mu}m$ was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

• Progress in Superconductivity
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• 제10권1호
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

• Progress in Superconductivity
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• 제3권1호
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• pp.120-124
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• 2001

To establish the deposition condition of YBCO thin film on MgO single crystal substrates, processing parameters of deposition temperature, chemical composition and oxygen partial pressure were controlled. When using a Ba-deficient composition of YB $a_{1.8}$ $Cu_3$$O_{x}$, non-superconducting phase like CuO, $CuYO_2$ were formed, but BaCu02 was formed together with Yl23 phase when the starting composition was Ba-rich ($YBa_{2.3}$ $Cu_3$ $O_{x}$). The epitaxially grown Yl23 phase was formed at 760-$810^{\circ}C$ and $P_{O2}$=0.29-0.91 Torr.r.r.r.

• Progress in Superconductivity
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• 제7권2호
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• pp.158-161
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• 2006

Superconducting YBCO films were successfully fabricated by MOD process using chemically modified precursor solution. In this study, a chemically modified precursor solution for MOD processing was synthesized using metal-organic salts and organic additives. It was shown that crack-free and uniform precursor films were formed after calcination in humidified Oxygen atmosphere. Less than 3 hours are required to finish the calcination process. XRD measurement shows that $BaF_2,\;CuO,\;Y_2O_3$ are major constituent of precursor films. Furthermore, YBCO films without any secondary phases were successfully fabricated after annealing in wet $Ar/O_2$ atmosphere. The YBCO film prepared on a $LaAlO_3$ single crystal substrate ($10mm{\times}10mm$) gives transport $I_c$ of 10A at 77K. This chemical modification approach is a possible candidate for improving MOD-processing of YBCO coated conductor.

• Progress in Superconductivity
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• 제3권1호
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• pp.45-48
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• 2001

We have fabricated $MgB_2$thin films on (1 1 02)$ A1_2$$O_3$substrates by using a two-step method. Amorphous B thin films were deposited by a pulsed laser deposition technique and sintered in Mg vapor at various temperatures from 800 to $950^{\circ}C$. Superconducting properties of the thin films were investigated by temperature dependences of magnetization and critical current density. Structural studies were carried out by an x-ray diffraction and a scanning electron microscope. The films fabricated at $900^{\circ}C$ showed the highest transition temperature of 39 K and critical current density of ~$10^{7}$ A/$\textrm{cm}^2$ at 15 K.

• Progress in Superconductivity
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• 제9권2호
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• pp.173-176
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• 2008

[ $MgB_2$ ] films grown by hybrid physical chemical vapor deposition under appropriate growth conditions commonly exhibit columnar grain structure. The grain boundaries between adjacent columnar grains have been reported to be good flux pinning centers. In this work, we measured the angular dependence of critical current density ($J_c$) and observed the enhanced flux pinning when an external magnetic field was aligned parallel to the columnar direction. This $J_c$ was almost comparable to the $J_c$ for intrinsic pinning case up to 1 T at low temperatures, indicating that grain boundary pinning is very effective. At high fields, however, $J_c$ decreased rapidly resulting from the fact that the density of flux pinning centers provided by grain boundaries was outnumbered by the flux density.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1488-1490
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• 1997

$(Pb_{1-x}La_x)Ti_{1-x/4}O_3$ (x=0, 0.02, 0.04, 0.06, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb,La)$TiO_3$ with excess Pb 10mol% was made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate at 4000rpm for 30 seconds. Coated specimens were dried on the hot-plate at $350^{\circ}C$ for 10 min and sintered at $500{\sim}750^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6 at.%) thin films sintered at $650^{\circ}C$ were 884, $13.95{\mu}C/cm^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were $3.2{\times}10^{-8}\;C/cm^2K$, $1.02{\times}10^{-8}\;C{\cdot}cm/J$, $2.9{\times}10^{-11}\;C{\cdot}cm/J$, $0.29{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3304-3306
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• 1999

In this study, we used the sputtering method with single target to obtain the thick and uniform PZT($PbZrTiO_3$) films for micromached IR sensor application. Then, we investigated the etching characteristics and conditions which is necessary process to fabricate the IR sensor. We tested the C-axis orientation and P-E loop of the deposited PZT films with the XRD and RT66A, respectively. Also we investigated the surface of the films by the AFM and SEM analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.366-367
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• 2006

Different orientated SBN thin films were deposited by Ion Beam Sputtering, and electric properties were measured on each orientation. Ferroelectric $Sr_xBa_{1-x}Nb_2O_6$(SBN) has excellent electro-optic, photo-refractive, piezoelectric, pyroelectric properties. SBN thin film has been deposited by various method, of sol-gel, PLD, CVD, sputtering, etc.. To avoid lead pollution of Pb-system perovskite ferroelectric materials. SBN thin films were fabricated for pyroelectric IR sensor. Using the ceramic target of the same composition and Pt(100)/$TiO_2/SiO-2$/Si(100) substrate, crystallization and orientation behavior as well as electric properties of the films were examined. Seed layer and thin films thickness was controlled to observe the effect on preferred orientation. We measured I-V, C-V, P-E hysteresis to characterize electric-properties on each orientations.