• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.3
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• pp.451-460
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• 1989

This paper dealt with the effect of the ratios N2 to H2 gas on the corrosion fatigue failure behavior of ion-nitrided SM45C steel specimens. The specimens were water cooled after ion-nitriding at 500.deg. C for 3hrs in 5 Torr, 0.8N$_{2}$ and 0.5N$_{2}$ atmospheres. As the nitrogen concentration increases, the higher compressive residual stresses developed in the surface layer and the depth of nitrided layer increased, which in turn gave rise to increases in fatigue strength and corrosion fatigue life. In the region less than 1.5 * 10$^{5}$ cycles, fatigue failure initiated at the brittle nitrided case, whereas in the region higher than 1.5 * 10$^{5}$ cycles crack initiated from the non-metallic inclusions in the subsurface. The initiation of corrosion fatigue failure was mainly attributed to pitting of case hardened surface layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.299.1-299.1
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• 2013

넓은 표면적을 갖는 탄소나노튜브(CNT)는 기체 분자의 흡착 성능이 기존의 다른 흡착제에 비해 우수한 것으로 알려져 있으나, CNT의 물리/화학적 성질은 튜브의 직경과 기하 구조에 의해 큰 차이를 나타내며 정제가 매우 까다롭다는 단점을 가지고 있다. CNT와 외형적으로 매우 흡사한 질화붕소 나노튜브(BNNT)의 경우, 구조와 직경에 상관없이 열적, 화학적 안정성이 우수하여 $CO_2$를 비롯한 다른 공해 물질들의 제거제나 흡착제로서 응용 가능성이 매우 높다. 본 연구진은, BN-결함을 도입한 BNNT 벽면에서의 $CO_2$ 흡착 반응과 $CO_2$를 에너지 물질인 HCOOH와 $H_2CO_3$로 전환하는 반응에 대한 양자화학 이론 계산 연구를 수행하였다. 그 결과, $CO_2$에 대한 $B_N$-BNNT 흡착 성능이 튜브의 직경에 상관없이 매우 우수하였고, $B_N$-BNNT 벽면상에 흡착된 $CO_2$가 물 분자와 반응할 경우 HCOOH와 $H_2CO_3$로의 전환반응이 효과적으로 진행되었다. 이러한 이론 계산 연구 결과는 BN-BNNT가 $CO_2$ 흡착제 및 에너지 전환 촉매로의 응용 가능성을 훌륭히 제시하고 있다.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.551-557
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with the without the presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor plume plasma expending into th ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The nitrogen content of the films was found to increase drastically with an increase of nitrogen pressure. The surface morphology of the films was studied using a scanning electron microscopy. Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtained films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.165-169
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• 2001

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with and without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increase of a crystallite size in the films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. Many crystalline grains were observed in the morphology of the deposited films by scanning electron microscopy. In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.835-844
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• 2001

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.303-308
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• 2003

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.240-243
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of Powder Materials
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• v.13 no.6 s.59
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• pp.432-438
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• 2006

Aluminum nitride (AlN) nanopowders with low degree of agglomeration and uniform particle size were synthesized by carbothermal reduction of alumina and subsequent direct nitridization. Boehmite powder was homogeneously admixed with carbon black nanopowders by ball milling. The powder mixture was treated under ammonia atmosphere to synthesize AlN powder at lour temperature. The effect of process variables such as boehmite/carbon black powder ratio, reaction temperature and reaction time on the synthesis of AlN nanopowder was investigated.