• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.20 no.4
• /
• pp.7-11
• /
• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Korean Journal of Materials Research
• /
• v.9 no.9
• /
• pp.943-947
• /
• 1999

The crystal structure and the microwave dielectric properties of $La(Mg_{1/2}Ti_{1/2})O_3$ ceramics have been investigated. $La(Mg_{1/2}Ti_{1/2})O_3$ has the 1:1 ordered monoclinic structure with the lattice parameters of $a = 5.5467(3){\AA}, b = 5.5616(3){\AA}, c = 7.8426(5) {\AA} and \beta = 89.9589 (2)^{\circ}$ The spacegroup of LMT is $P2_1/n$. Monoclinic LMT has the in­phase and anti-phase tilting of octahedra with the $a^_a^_c^_$ tilting system. Anti-parallel shift of A-site cations was also found in LMT. The relative density of the specimens sintered above $1600^{\circ}C$ was ranged between 95 % and 96 % of the theoretical density and the dielectric constant of specimens was about 28. The highest $Q\timesf$ achieved in this investigation was 63,100 for the specimen sintered at $1630^{\circ}C$ for 5 hr. Temperature coefficient of resonance frequency ranged from $>-74 ppm/^{\circ}C ~ -79 ppm/^{\circ}C$.

• Proceedings of the Korean Society for Emotion and Sensibility Conference
• /
• 1999.11a
• /
• pp.233-237
• /
• 1999

Aromatherapy는 향을 이용하여 생리적 및 심리적 효과를 나타내는 치료법이다. 향의 종류에 따라 여러 효과들이 나타나고 있는데 본 연구에서는 이완 유도향 제품을 개발하기 위해 자율신경계로부터의 신호인 Galvanic skin resistance(GSR), 피부온도, 심박수 등과 뇌파에서의 변화를 측정하여 이완의 정도를 측정하고자 하였다. 실험방법은 4 종류의 aromatherapy용으로 조제된 복합향(#2033, #2026, #11, #13)을 이용하고 피검자는 후각기능이 정상이며 물리적 및 심리적 stress가 없고, 음주, 담배를 3일전까지 경험이 없는 군을 택하였다. 향을 주는 시간은 1분으로 하였으며 순서에 의한 효과를 없애기 위해 4 종류를 random order에 의해 실시하였다. 대조군으로는 증류수를 이용하여 실험 전, 실험 중, 실험 후에서 각각 측정하였으며 또한 각성효과가 좋은 jasmine과 이완 효과를 보이는 lavender를 같은 protocol로 시행하여 이완의 효과를 비교하였다. 뇌파는 FFT분석에 따라 각 주파수 영역 즉 beta, alpha, theta, delta로 나누어 분석하였다. Jasmine과 lavender의 이완 효과에서는 GSR의 변화와 HRV의 변화를 보고한 바 있다(백,1998). 또한 심리불안 효과와 향 이미지 검사를 동시에 시행하여 주관적지표로 삼았다. 실험 결과에서는 이러한 4 종류의 향은 모두 GSR의 현저한 감소 효과를 보였으며, 심박수와 피부온도의 감소경향을 나타내었다. 자율신경계 반응에 따라 4 종류 향의 이완 효과의 순서를 결정할 수 있었다. 주관적 검사와의 상관관계도 잘 나타났으며 이미지는 이완 정도와 섬세하다 항목이 잘 반영되었다. 뇌파의 변화에서는 의미 있는 변화는 보이지 않았다. 결론적으로 relaxation 효과는 GSR를 비롯한 자율신경계지표에서 잘 반영되었다.^2$=.792가 되었다. 설명되는 누적분산값은 67.18%였다.주관적 평가의 결과와 객관적 평가 결과를 이용해 마직물의 태를 평가하는 산출식을 제시하였다. 태 평가치의 경우 16가지 특성치를 모두 넣는 방법과 stepwise 방법, 또 Kawabatark 사용한 순차적 군 회귀법의 세가지 방법의 회귀식 중 16가지 특성치를 모두 넣는 방법의 결정계수가 가장 높았다.tosterone농도는 107.7$\pm$12.0 pmol／l이었고, 남성의 타액내 농도는 274.2$\pm$22.1 pmol／l이었다. 이상의 결과로 보아 본 연구에서 정립된 EIA 방법은 RIA를 대신하여 소규모의 실험실에서도 활용할 수 있을 것으로 사려된다.또한 상실기 이후 배아에서 합성되며, 발생시기에 따라 그 영향이 다르고 팽창과 부화에 관여하는 것으로 사료된다. 더욱이, 조선의 ${\ulcorner}$구성교육${\lrcorner}$이 조선총독부의 관리하에서 실행되었다는 것을, 당시의 사범학교를 중심으로 한 교육조직을 기술한 문헌에 의해 규명시켰다.nd of letter design which represents -natural objects and was popular at the time of Yukjo Dynasty, and there are some documents of that period left both in Japan and Korea. "Hyojedo" in Korea is supposed to have been influenced by the letter design. Asite- is also considered to have been "Japanese Letter Jobcheso." Therefore, the purpose of this study is to look in

• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.4
• /
• pp.11-18
• /
• 2021

A novel microwave dielectric composite material for ultra-low temperature co-fired ceramics (ULTCC) with (1-x)BaWO₄-xBaV₂O₆ (x=0.54~0.85) composition was prepared by firing a mixture of BaWO₄ and BaV₂O₆. Shrinkage tests showed that the ceramic composite begins to densify at a temperature as low as 550℃ and can be sintered at 650℃ with 98% of relative density under the influence of BaV₂O₆. X-ray diffraction analysis showed that BaWO₄ and BaV₂O₆ coexisted and no secondary phase was detected in the sintered bodies, implying good chemical compatibility between the two phases. Near-zero temperature coefficients of the resonant frequency (𝛕_f) could be achieved by controlling the relative content of the two phases, due to their positive and negative 𝛕_f values, respectively. With increasing BaV₂O₆ (x from 0.53 to 0.85), the 𝛕_f value of the composites increased from -7.54 to 14.49 ppm/℃, ε_r increased from 10.08 to 11.17 and the quality factor (Q×f value) decreased from 47,661 to 37,131 GHz. The best microwave dielectric properties were obtained for x=0.6 samples with ε_r=10.4, Q×f=44,090 GHz, and 𝛕_f=-2.38 ppm/℃. Chemical compatibility experiments showed the developed composites are compatible with aluminum electrode during co-firing process.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.3
• /
• pp.75-85
• /
• 2009

This work proposes a 13b 100MS/s 0.13um CMOS ADC for 3G communication systems such as two-carrier W-CDMA applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs a four-step pipeline architecture to optimize power consumption and chip area at the target resolution and sampling rate. Area-efficient high-speed high-resolution gate-bootstrapping circuits are implemented at the sampling switches of the input SHA to maintain signal linearity over the Nyquist rate even at a 1.0V supply operation. The cascode compensation technique on a low-impedance path implemented in the two-stage amplifiers of the SHA and MDAC simultaneously achieves the required operation speed and phase margin with more reduced power consumption than the Miller compensation technique. Low-glitch dynamic latches in sub-ranging flash ADCs reduce kickback-noise referred to the differential input stage of the comparator by isolating the input stage from output nodes to improve system accuracy. The proposed low-noise current and voltage references based on triple negative T.C. circuits are employed on chip with optional off-chip reference voltages. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.70LSB and 1.79LSB, respectively. The ADC shows a maximum SNDR of 64.5dB and a maximum SFDR of 78.0dB at 100MS/s, respectively. The ABC with an active die area of $1.22mm^2$ consumes 42.0mW at 100MS/s and a 1.2V supply, corresponding to a FOM of 0.31pJ/conv-step.

• Journal of the Korean Magnetics Society
• /
• v.13 no.3
• /
• pp.109-114
• /
• 2003

The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt％ $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt％ $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

• Journal of the Korean Ceramic Society
• /
• v.38 no.2
• /
• pp.117-121
• /
• 2001

본 연구에서는 Zr $O_2$첨가가 Ba(Zn$_{1}$3/Ta$_{2}$3/) $O_3$(BZT)세라믹의 구조와 고주파 유전특성에 미치는 영향을 조사하였다. 모든 시료에서 $Ba_{5}$Ta$_4$ $O_{15}$ 이차상이 발견되었으며 Zr $O_2$의 첨가량이 증가하면 $Ba_{5}$Ta$_4$ $O_{15}$ 상의 양은 감소하였다. 반면에 Zr $O_2$의 첨가량이 1.5 mol% 이상인 시료에서는 $Ba_{0.5}$Ta $O_3$상이 발견되었다. BZT의 입자 크기는 약 1$mu extrm{m}$ 정도였지만, Zr $O_2$를 첨가하면 입자 크기가 증가하였다. SEM 및 TEM 분석에 의하여 Zr $O_2$가 첨가되면 액상이 존재하는 것을 알 수 있었으며, 이로 인하여 입자가 성장되는 것이 발견되었다. 시편의 밀도는 소량의 Zr $O_2$를 첨가하면 증가하지만 Zr $O_2$첨가량이 증가하면 감소하였다. 유전율은 모든 시료가 27에서 30 사이의 값을 가지고 있었다. 공진주파수 온도계수는 소량의 Zr $O_2$을 첨가하였을 때는 변화하지 않았지만 첨가량이 2.5 mol% 이상에서는 증가하였다. Q$\times$f 값은 Zr $O_2$을 첨가하면 증가하였고, 입자 성장이 완료되는 조성에서 최대 값을 보였다. 본 연구에서는 Zr $O_2$를 2.0 mol% 첨가하고 15$50^{\circ}C$에서 10시간 소결한 시료에서 최대의 Q$\times$f 값(164,000)을 얻을 수 있었다.다.다.

• Applied Microscopy
• /
• v.34 no.1
• /
• pp.61-69
• /
• 2004

The microwave dielectric properties and microstructures of the Complex Perovskite (1-x)$(Li_{1/2}Sm_{1/2})TiO_3-x (Na_{1/2}Sm_{1/2})TiO_3$(LNST) system were investigated using the X-ray diffraction (XRD) and scanning electron microscopy (SEM). LNST had not only the antiphase tilting of oxygen octahedron but also the inphase tilting of oxygen octahedron and the antiparallel shift of cations. Also, when $0.0{\leq}x{\leq}0.4$, LNST had the vacancy ordering of A-sites because of the evaporation of Li ions. From the observation of the microstructure, abnormal grain growth phenomena were observed over the whole range of x. The temperature coefficient of resonant frequency ($T_{cf}$) of the $({Li_{1/2}}^{+1}{Sm_{1/2}}^{+3})TiO_3$(LST) system has a large negative value ($-220ppm/^{\circ}C$) but the $({Na_{1/2}}^{+1}{Sm_{1/2}}^{+3})TiO_3$(NST) system which substituted $Na^{+1}$ has a large positive value ($+173ppm/^{\circ}C$). The dielectric properties of ${\varepsilon}_r=103,\;Q*f_{0}=3,700GHz$ and $T_{cf}=+50ppm/^{\circ}C$ at 4GHz were obtained when x =0.4.

• Korean Journal of Optics and Photonics
• /
• v.21 no.3
• /
• pp.123-128
• /
• 2010

Sum frequency generation was utilized to obtain a yellow laser with the wavelength of 578.4 nm for a probe laser of an Yb lattice clock. The output of an Nd:YAG laser with wavelength of 1319 nm and that of an Yb-fiber laser with wavelength of 1030 nm were passed through a waveguided periodically-poled lithium niobate (WG-PPLN) for sum frequency generation. It is required that the probe laser has a linewidth of the order of 1 Hz to fully resolve the Yb lattice clock transition. Thus, the linewidth of the probe laser was reduced by stabilizing the frequency to a super-cavity. This was made of ULE with a low thermal expansion coefficient, and was mounted on an active vibration-isolation table at the optimal point for the reduced sensitivity to vibration. Also, this was installed in a vacuum chamber, and the temperature was stabilized to 1 mK level. This system was installed in an acoustic enclosure to block acoustic noise. The finesse of the super-cavity was measured to be 380 000 from the photon life time of the cavity.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.3
• /
• pp.478-486
• /
• 1998

$CaTiO_3-x(La_{1/3}Nd_{1/3}TiO_3\;(0\le \textrm x\le0.8)$ system was prepared by reaction of $CaCO_3,\;LaO_3,\;Nd_2CO_3$ and ,TEX>$TiO_2$ mixture at 1673 K, which can be applied for microwave dielectric ceramic materials. The lattice parameters of(1-x))$CaTiO_3-x(La_{1/3}Nd_{1/3}TiO_3\;(0\le \textrm x\le0.8)$ system increased with the increase of x. Its structure was investigated by Rietveld profile-analysis of XRD in detail. Cations $ La^{3+}$ and Nd^{3+}$ were located at the $Ca^{2+}$ site in the range of $0\le \textrm x\le0.8$. crystal structure in $;(0\le \textrm x\le0.6)$ maintained space group Pnma with CaTiO_3 structure. The tiled and distorted $TiO_6$ was gradually released with the increase of x in $0\le \textrm x\le0.6$ .The structure was changed to a new space group of $Pmn2_1$ at the x value of 0.8. The relative dielectric constant $(\epsilon_r)$ of $(1-x)CaTiO_3-x(La_{1/3} Nd_{1/3})TiO_3$ ($(0\le \textrm x\le0.8)$) system was exponentially decreased by with the increased of x. The temperature coefficient of resonant frequency $(\tau_f)$ decreased with the increase of x in $0\le \textrm x\le0.6$ and then increased again at x=0.8 due to the change of crystal structure. The value of Q$\cdot f_o$ was 13800 (GHz) at x=0.2 and was very low under 2000 (GHz) in 0.4$\leq$x$\leq$0.8.