• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.339-344
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• 2011

The Ohmic contact of Ti/Au metals on n-type ZnO thin film deposited on c-plane sapphire substrates by pulsed laser deposition was investigated by TLM (transfer length method) patterns. The Ti/Au metal films with thickness of 35 nm and 90 nm were deposited by electron-beam evaporator and thermal evaporator, respectively. By using the photo-lithography method, the $100{\times}100{\mu}m^2$ TLM patterns with $6{\sim}61{\mu}m$ gaps were formed. To improve the electrical properties as well as to decrease an interface states and stress between metal and semiconductor, the post-annelaing process was done in oxygen ambient by rapid thermal annealing system at temperature of $100{\sim}500^{\circ}C$ for 1 min. In this study, it appeared that the minimum specific contact resistivity shows about $1.1{\times}10^{-4}{\Omega}{\cdot}cm^2$ in $300^{\circ}C$ annealed sample, which may be originated from formation of oxygen vacancies of ZnO during an oxidation of Ti metal at the interface of Ohmic contacts.

• Journal of Korean Society of Steel Construction
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• v.29 no.4
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• pp.269-280
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• 2017

In this study, seismic performance was evaluated for the exposed column-base plate weak-axis connections of small size steel structures through cyclic loading tests. The primary test parameters are the thickness of base plate, the presence of rib plates, the number of anchor bolts and embedment length of anchor bolts. To investigate the effect of bond performance of anchor bolts on the seismic performance of column-base plate connections, L-shaped round bars and thread bars were used as the hooked anchor bolts in the test specimens. Test results showed that bond performance of anchor bolts and the thickness of base plate significantly affect the structural performance and energy dissipation capacity. In particular, it was found that even if the requirements for minimum thickness of the base plate that is satisfied, the base plate can yield before the capacity of steel column reaches the plastic moment resulting in decreasing the structural performance of the connections. However, the proposed details of the connections might be considered as the partially restrained, that is semi-rigid connections. Consequently, the L-shaped thread anchor bolts is applicable in the exposed column-base plate weak-axis connections of small-size steel structures.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.187-196
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• 2005

MEMS devices such as a vibratory gyroscope often suffer from a lower yield rate due to fabrication errors and the external stress. In the decoupled vibratory gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, fabricated with SOI (Silicon-On-Insulator) wafer and packaged using the anodic bonding, has a large wafer bowing caused by thermal expansion mismatch as well as non-uniform surfaces of the structures caused by the notching effect. These effects result in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) technology. It uses a silicon wafer and two glass wafers to minimize the wafer bowing and a metallic membrane to avoid the notching. In the packaged SiOG gyroscope, the notching effect is eliminated and the warpage of the wafer is greatly reduced. Consequently the frequency difference is more uniformly distributed and its variation is greatly improved. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

• Development and Reproduction
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• v.10 no.2
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• pp.141-146
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• 2006

Genotype data from seven microsatellites typed in 231 animals were used to estimate the genetic structures of eight cow population distributed by regional area in Hanwoo (Korean cattle). In total, 53 alleles were detected from the genotyping of seven microsatellite markers. The average of expected heterozygosities ranged from 0.682 to 0.734 in 8 population of Hanwoo. Even though there were also some of alleles that were found in only specific regional population, similar frequency pattern for the most of alleles appeared in various 8 population. Genetic distances between populations were obtained using STDUPGMA method to construct a phylogenetic tree. The tree illustrated that most individuals were grouped on the basis of populations, distributed by the regional area. Some of genetic parameter on the basis of microsatellite gonotyping appears to provide a useful tool for examining the regional area kindship and genetic variation in Hanwoo.

• Journal of Conservation Science
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• v.28 no.2
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• pp.175-184
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• 2012

A purpose of this research is to find out characteristic of bronze artifacts and gold ornaments excavated from Xiongnu tombs No. 2~4 at Duurlig Nars in Mongolia through scientific analysis of them. The Tombs are comparatively small. There were still lots of relics remaining although the tombs had been already robbed. Also the tombs are evaluated important since the origin of them show coexisting of chinese and northern style. First of all, an analysis result about bronze vessels found in this site, they have high lead(Pb) content and relatively low tin(Sn) content, as compared with the Bronze Han Mirror and End-fittings of Bronze Parasol Rib. Especially in case of bronze tray and bronze lamp from the no. 2 tomb and also bronze cauldron from the no. 4 tomb contain only 1wt% of tin which means binary alloy composition(Cu-Pb). Also, in the case of gold ornaments found in the no. 2 tomb, they have comparatively high purity. And the research suppose that the high possibility of that they were used soldering using alloy of Au-Cu or diffused bonding(using malachite and copper oxide) for joining gold grains of gold granulation ornament. Further scientific research and analysis in Mongolia and other countries will provide more clues to solve mystery of Xiongnu culture.

• Journal of the Korean Wood Science and Technology
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• v.36 no.4
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• pp.26-36
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• 2008

As the height of the light-framed building increases, the lateral load and overturn-moment are increased and the possibility of the building overturn becomes larger. Because the shear wall resists lateral load in light-framed building, the reinforcement of shear wall is required. In order to reinforce the light-framed shear wall, using lag screw fastener type (B-HD) and using bolt type (S-HD) hold-down connectors were applied for test. And domestic larch lumbers, $38{\times}140mm$ and $89{\times}140mm$, KS 2nd grade, were used for the stud. The North American OSB panels were used for sheathing panel. Static loads, load speed 6 mm/min, were applied on top of the wall. As a result, shear strength of the wall that using hold-down connector was improved sufficiently. And when applying the S-HD type hold-down connector, stud should be reinforced against weakening by drilled hole. As increasing the number of lag screw, the number of bolt and the product allowable strength, the strength of shear wall that using hold-down connector was also increased. When applying hold-down connector to light-framed building using 38 mm stud, it must be reinforced by enlarging the thickness of stud like as 38 mm doubled column.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.926-931
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• 1999

The microstructure, wettability, shear strength and aging effect of Sn-3.5Ag/Cu and Alloy42 lead-frame solder joints were measured for comparison. In the case of Sn-3.5Ag/Cu, $Ag_3Sn and Cu_6Sn_5$ phases in the matrix Sn and $1~2\mu\textrm{m}$ thick $Cu_6Sn_5$ phase at the interface of solder/lead-frame were formed. In the case of Sn-3.5Agl Alloy42, only AgJSn phase of low density in the matrix Sn and $0.5~1.5\mu\textrm{m}$ thick $FeSn_2$, phase at the interface of solder/leadframe were formed. Comparing to Cu, Alloy42 showed wider area of spread and smaller contact angle, thus better wet­tability. But shear strength and ductility of Alloy 42 solder joints were only 33% and 75% of those of Cu, respectively After aging at $180^{\circ}C$ for 1 week, $\xi-Cu_3Sn$ layer on $\eta-Cu_6Sn_5$ layer was formed on Cu lead-frame, while coarsened cir­cular $Ag_3Sn$ phase in the matrix and thickened $FeSn_2$, at the interface were formed on Alloy42 lead- frame.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.279-282
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• 2006

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.128-128
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• 2010

중적외선 영역은 장애물에 의해서 파장의 흡수가 거의 일어나지 않기 때문에 적외선 소자에서 널리 이용되고 있다. 현재 대부분의 중적외선 소자에는 HgCdTe (MCT)가 사용되고 있지만, 3성분계 화합물이 가지는 여러 문제를 가지고 있다. 반면에, 2성분계 화합물인 인듐안티모나이드 (InSb)는 중적외선 영역 ($3-5\;{\mu}m$) 파장 대에서 HgCdTe와 대등한 소자 특성을 나타냄과 동시에 낮은 기판 가격, 소자 제작의 용이성, 그리고 야전과 우주 공간에서 소자 동작의 안정성 때문에 HgCdTe를 대체할 물질로 주목을 받고 있다. InSb는 미국과 이스라엘과 같은 일부 선진국을 중심으로 연구가 되었지만, 국방 분야의 중요한 소자로 인식되었기 때문에 소자 제작에 관한 기술적인 내용은 국내에 많이 알려지지 않은 상태이다. 따라서 본 연구에서는 InSb 소자 제작의 기초연구로 절연막과 pn 접합 형성에 대한 연구를 수행하였다. 절연막의 특성을 알아보기 위해, InSb 기판위에 $SiO_2$와 $Si_3N_4$를 PECVD (Plasma Enhanced Chemical Vapor Deposition)로 증착을 하였다. 절연막의 계면 트랩 밀도는 77K에서 C-V (Capacitance-Voltage) 분석을 통하여 계산하였으며, Terman method 방법을 이용하였다.[1] $SiO_2$는 $120-200^{\circ}C$의 온도 영역에서 계면 트랩 밀도가 $4-5\;{\times}\;10^{11}cm^{-2}$범위를 가진 반면, $240^{\circ}C$의 경우 계면 트랩 밀도가 $21\;{\times}\;10^{11}cm^{-2}$로 크게 증가하였다. $Si_3N_4$는 $SiO_2$ 절연막에 비해서 3배 정도의 높은 계면 트랩 밀도 값을 나타내었으며. Remote PECVD 장비를 이용하여 $Si_3N_4$ 절연막에 관한 연구를 추가적으로 진행하여 $7-9\;{\times}\;10^{11}cm^{-2}$ 정도의 계면 트랩 밀도 값을 구할 수가 있었다. 따라서 InSb에 대한 절연막은 $200^{\circ}C$ 이하에서 증착된 $SiO_2$와 Remote PECVD로 증착 된 $Si_3N_4$가 적합하다고 할 수 있다. 절연막 연구와 더불어 InSb 소자의 pn 접합 연구를 진행하였다. n-InSb (100) 기판 ($n\;=\;0.2-0.85\;{\times}\;10^{15}cm^{-3}$ @77K)에 $Be^+$이온 주입하여 p층을 형성하여 제작 되었으며, 열처리 조건에 따른 소자의 특성을 관찰 하였다. $450^{\circ}C$에서 30초 동안 RTA (Rapid Thermal Annealing)공정을 진행한 샘플은 -0.1 V에서 $50\;{\mu}A$의 높은 암전류가 관찰되었으며, 열처리 조건을 60, 120, 180초로 변화하면서 소자의 특성 변화를 관찰하였다.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.288-292
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• 1998

The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.