• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.1-5
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• 2008

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.41-44
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• 2008

Fiber Reinforced Polymers (FRPs) have recently been highly used for repairing and strengthening civil structures due to their superior material properties. By using FRPs, external bond method is the most used method in the construction industry. Although many researches on reinforced concrete externally strengthened with FRPs have been conducted, time-dependant behaviors of the beams have not been investigated yet. This paper documents a series of beam experiments that were carried out to evaluate time-dependant behavior. Three RC beams were built and the parameters considered in this experiment were types of FRPs. Through these experiments, it was proved that the beam strengthened with CFRP was more effective than that with GFRP in terms of time-dependant behavior.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.4
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• pp.301-306
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• 2014

Recently in accordance with the rapid development of the industrial society, the accidents caused by dielectric breakdown have been increasing in power grid. It is important to prevent the dielectric breakdown of a high voltage apparatus to reduce the damage from electrical hazards. To establish an electrically reliable database of insulation design criteria for high voltage apparatus, a study on dielectric characteristics test is indispensable. In this study, dielectric characteristics according to field utilization factors (${\xi}$) which are represented as the ratio of mean electric field to maximum electric field are investigated. the dielectric breakdown experiments by using several kinds of electrode systems made with stainless steel are performed by AC breakdown voltage under air-insulation. Also, the experimental results are analyzed by the Weibull distribution. As a result, it is found that the dielectric characteristics of air-insulation are determined by ${\xi}$ as well as arrangement of electrode systems. It is considered that the results of this study would be applicable to designing the air-insulated high voltage apparatuses.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.213-221
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• 2002

In order to improve the reliability of XLPE cables, it is necessary to find the useful diagnostic parameter according to long term aging. This paper described the change of partial discharge(PD) phase Properties of XLPE cable insulation with branch type electrical tree degradation. for long term aging. To understand the PD Properties with $\phi$ -q-n distributed shape of XLPE insulation, specimens were prepared by 22.9㎸ distribution cable and made in a type of block(16${\times}$16${\times}$3[mm]). Ogura needles having tip radius of l0${\mu}{\textrm}{m}$ were inserted into each block pieces. The measuring system was consisted of PD detector, digitizer for digital conversion, VXI system for signal processing. The PD properties of the specimens were measured from initiation of tree to breakdown and their characteristics were analyzed. We analyzed the relationship between electrical properties(PD Quantity, PD initiation angle, PD extinction angle, PD occurrence angle : (PD extinction angle - PD initiation angle)) and the normalized aging rate. We found PD parameter, PD initiation angle and occurrence angle, which are a useful diagnostic parameter in estimating the branch type electrical tree for XLPE insulation condition.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.4
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• pp.449-455
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• 2015

Owing to the trend of an increase in capacity and high-efficiency requirement, the life and reliability of power transformer depend significantly on the amount of heat generation per unit volume and the degradation of insulation oil. These problems can be solved by enhancing the cooling performance of the radiator. The purpose of this study was to find a suitable position of fans for a better cooling effect given by the forced-convection of air in an ONAF (Oil Natural Air Forced) type transformer. In the simulation, commercial software was used for flow analysis, and the cooling passage of the oil was simplified to shorten the time taken for computation. With the diameter of the fan fixed at a constant value, the analysis was performed only by changing the position of the fans. As a result, a vertical position change of the fans does not affect the cooling performance significantly. However, the temperature drop given by the fans positioned on the front region of the transformer is larger than that on the rear region.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.24-29
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• 2009

The SiOC film as inter layer insulator was researched the reason of the decreasing the dielectric constant by the ionic polarization and electronic polarization, respectively. The dielectric constant was measured using the conventional C-V measurement system, and the reflective index owing to the electronic polarization. Two kinds of dielectric constants were compared and then induced the origin of low-k materials. The chemical properties of the SiOC film were analyzed by the FTIR spectra, and the carbon content was obtained by the deconvoluted data of FTIR spectra. The variation of the carbon content tended to similar to the trend of reflective index, but was in inverse proportion to the dielectric constant. The effect of the electronic polarization did not affect the decreasing the dielectric constant, however the ionic polarization decreased effectively the dielectric constant of the SiOC film.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.3
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• pp.80-86
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• 2003

A study on the insulation aging assessment and maintenance for submarine medium voltage power cable systems has been performed The purpose of this work is the economic discrimination and maintenance of bad cables which is likely to cause cable system failure. 1 have found that aging status of submarine cable systems are very poor and in progress. Therefore, we have the replacement of cable terminations and repeat the diagnostic measurement Insulation status were improved with the replacement of cable terminations. I have confirmed, with the electrical md structural analysis of terminations, that the poor aging status of cables are mainly caused not by the cable insulations but by the aging of cable terminations. From the above results, I have also confirmed that the domestic diagnostic system is successful and convenient for the discrimination and maintenance of the damaged cables economically.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1770-1772
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• 2003

본 연구는 국내에서 최초로 제안되고 적용가능성이 입증되어 설계, 제작된 Probe-type Pockets sensor(HY-Pockets Sensor)를 GIS등의 고전압 장비들에 응용한 레이저 부분방전 진단 시스템 개발을 목표로 하고 있다. 이러한 목적으로, 170kV 급 실 규모 GIS내부의 전류 도체에 다양한 곡률 반경의 침 전극을 부착시켜 부분 방전에 기인된 불평등 전계를 형성시켜 개발된 센서의 실규모 적용 가능성을 고찰하였다. 본 레이저 계측 시스템은 He-Ne laser, single multi-mode optical fiber, $2{\times}2$ 50/50 laser to single mode fiber coupler, probe-type Pockets sensor, photo detector 등으로 구성하여 레이저의 진행을 유도하고, 신호의 특성을 분석하였다. probe-type Pockets sensor로부터 의 출력 신호는 photo detector를 통해 전기적 신호로 변환되어 digital oscilloscope에 의해 측정되고, 또한 PC를 통해 데이터의 저장과 통계적, 분석적 처리 과정을 수행하게 된다. 본 연구의 결과로서 부분방전원에서 생성된 방전 신호에 대한 거리에 따른 센서 감도 결정, 그에 대한 센서 감도의 보정 향상, 전계의 세기의 변화에 따른 센서의 선형성 등이 도출되었고, 이러한 실험결과를 통해 실 GIS(170kv급) 내부에서 발생하는 부분방전의 검출에 본 레이저 부분방전 진단 시스템의 적용 가능성이 제시 되었다.