• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1520-1522
• /
• 1996

전기 이중층 콘덴서는 일반적인 콘덴서와 백업용 이차 전지의 중간적 성격을 갖는 디바이스로서 직류 전압 인가시 전하는 진해액과 활성탄의 계면에 전기이중층을 이루며 축적된다. 본 논문에서는 탄화 및 활성화 조건을 달리하여 활성탄 전극을 제조하고 세공 면적, 비표면적, 겉보기 밀도차 기공율을 측정,검토하였으며 여러가지 유기 용매에 tetraethylammonium tetrafluoroborate를 각각 첨가하여 제조한 전해액의 전기전도도를 정하고 이들 전해액과 활성탄 전극을 이용하여 전기 이중층 콘텐서를 제작한 후 정전용량, 활성탄 전극의 안정 전위, 체적용량 밀도, 중량용량 밀도 등을 검토하였다.

• Journal of Adhesion and Interface
• /
• v.22 no.4
• /
• pp.144-152
• /
• 2021

Understanding charge transfer across the interface between organic semiconductor and gate insulator gives insight into the development of high-performance organic memory as well as highly stable organic field-effect transistors (OFETs). In this work, we firstly unveil a novel interfacial charge transfer mechanism, in which hole transfer from organic semiconductor to polymer insulator was nonlinearly boosted by localized states coupling. For this, OFETs based on rubrene single crystal semiconductor and Mylar gate insulator were fabricated via vacuum lamination, which allows stable repetition of lamination and delamination between semiconductor and gate insulator. The surfaces of rubrene single crystal and Mylar film were selectively degraded by photo-induced oxygen diffusion and UV-ozone treatment, respectively. Consequently, we found that the interfacial charge transfer and resultant bias-stress effect were nonlinearly boosted by coupling between localized states in rubrene and Mylar. In particular, the small number of localized states in rubrene single crystal provided fluent pathway for interfacial charge transport.

• The Korean Journal of Pesticide Science
• /
• v.9 no.3
• /
• pp.191-198
• /
• 2005

Hippuryl-L-histidyl-L-leucine (Hip-L-His-L-Leu, HHL) is the known substrate of ACE, which used often in inhibition kinetic study to design new inhibitor. Here we use HHL molecule as a template to predict pharmacophore which can interact with residues in active site of AnCE, new potential insecticide target protein. To explain physicochemical properties related to molecular geometry and conformational change in reaction field as well as electron density of atoms associated to pharmacophores, geometry optimization, NMR chemical shifts and natural population analysis were performed by ab initio and DFT method. Calculated NMR chemical shifts showed good agreement with the experimental ones and obtained electron densities were used for analyzing pharmacophores of corresponding atoms. Finally, we could extract aye pharmacophores related to hydrophobic aliphatic and aromatic site, hydrogen bonding donor and acceptor site and Zn binding site from the HHL molecule.

• Journal of the Mineralogical Society of Korea
• /
• v.14 no.1
• /
• pp.12-20
• /
• 2001

충북 영동군 동창광산에서 산출되는 일라이트(illite)광선의 표면화학특성을 전위차 적정 실험과 FITEQL3.2 프로그램을 이용하여 연구하였다. 정량 Xtjs 회절 분석에 의한 일라이트 광석의 광물조석은 석영 46.6% 일라이트 41.6% 카올리나이트(kaolinite) 11.8%이며 $N_2$BET 방법에 의하여 구한 비표면적은 $6.52 m^2$g이다. 전위차 적정 실험결과를 그란(Gran)법을 적용하여 구한 일라이트광석의 영전하점($pH_{pznpc}$ )은 pH 3.9 총표면 자리 밀도는 21.24 sites/$nm^2$이다. 표면 복합체 모델중 일정 용량 모델을 적용해 일라이트 광석의 표변 특성에 알맞는 모델을 찾아보았다. 일라이트 광석의 표면을 사면체 자리와 팔면체 자리로 나누어 설정한 2sites$-3pK_{ a}$s 모델은 변수값이 수렴되지않았으므로 부적절하다고 판단된다. 일라이트 광석의 표면을 하나의 균질한 흡착표면으로 가정해서 설정한 1 site -1 $K_{a}$ 와 1 site -2 $pK_{a}$ s 모델 사이에는 뚜렷한 차이는 없지만, 1 site -1 $pK_{a}$ 모델의 WSOS/DF 값이 17, 1 site - 2 $pK_a{s}$ 모델은 26으로서 앞 모델이 보다 적절하다. 이 결과는 일라이트 광석 표면에서 수소의 해리와 첨가 반응 중 첨가 반응을 무시하여도 표면반응을 설명하는 데 큰 무리가 없음을 시사한다. 가장 적절하다고 판단되는 1 site -1 $pK_{a}$ 모델의 $pK_{a}$ 값은 4.17, specific capacitance는 $6F/m^2$ 표면 자리 농도는 $1.15\Times10^{-3}$ mol/L 이다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.784-787
• /
• 2002

We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

• Journal of the Korean Chemical Society
• /
• v.23 no.2
• /
• pp.75-79
• /
• 1979

The frontier orbital energy, superdelocalizability and charge density of a series of benzologous pyridine ligands have been calculated by using HMO. According to ${\Delta}E_{\pi}$ of ligands on the basis of the above results, it is concluded that the stabilities are in the order of 1,10-Phen > 4,5-Phen > 1,5-Phen > 8-Hox > Hox-azoquinolinato. And also, the reactivities of electrophilic, nucleophilic and radical reaction, and bond strength have been respectively studied by superdelocalizabilities and charge densities.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.32 no.7
• /
• pp.234-238
• /
• 1983

This paper presents a steady-state computer solution of one-dimensional transport equations, describing a double(metal-semiconductor-metal) contact device, involving only one type of charge carrier. Most of the assumptions and approximations which are ordinarily introduced in order to make the transport equations analytically soluble are avoided here. The results are presented mainly in the form of(a) energy contours (b) concentration contours and (c) I-V characteristics. A computation of differential system capacitance as a function of applied voltage is also presented and schematic corrections are introduced for image force effects.

• Electrical & Electronic Materials
• /
• v.4 no.2
• /
• pp.175-184
• /
• 1991

급속 열처리 방법으로 두께가 약 80.angs.C인 산화막을 성장시킨 후 950.angs.C와 1150.angs.C의 온도에서 15초-120초 동안 질화 및 재산화 공정을 수행하여 초 박막 구조의 질화 및 재산화된 질화 산화막을 성장하였다. 성장한 질화산 화막과 재 산화된 진화 산화막의 전기적 특성은 C-V, I-V, 전하 포획 및 TDDB 측정등을 통하여 분석하였다. 측정된 소자의 특성으로부터 질화 조건이 950.angs.C, 60초이고 재산화 조건이 1150.angs.C, 60초인 재산화된 질화 산화막은 전기적 스트레스 인가후에 전하 포획에 의한 평탄전압변화(.DELTA. $V_{fb}$ )와 계면 상태밀도( $D_{itm}$)의 증가가 산화막보다 적은 우수한 특성을 나타내는 것을 알 수 있었다.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1996.11a
• /
• pp.291-295
• /
• 1996

This paper discusses several design factors of a capacitance displacement sensor with a numerical method and several experiments and describes guide lines of the design of this type sensor. We introduce the charge density method for the analysis of this type sensor, which has feasible accuracy and efficiency. The analysis of this type sensor with the charge density method agrees with displacement sensitivity experiments of a circular plate capacitance sensor with the sensor amp based In the charge transfer principle.

• Korean Journal of Soil Science and Fertilizer
• /
• v.34 no.4
• /
• pp.237-244
• /
• 2001

Investigation on the surface charge properties of some Korean arable soils was performed by ion adsorption technique with two kinds of indifferent ion ($Na^+$ and $K^+$) at the range of pH 3 to 9 in bulk solution. The contribution of soil components(organic matter, oxides and clay mineral) on the surface charge density was determined at two soil depth with different solid particle composition When the pH of solution increased, the negative charge of soil surface was increased among the all soils, but positive charge were not appeared above pH 6. apparently. The magnitude of surface charge density measured by NaCl adsorption method showed ra nges of $0.01{\sim}2.84cmol_c{\cdot}kg^{-1}$ and $7.41{\sim}12.20cmol_c{\cdot}kg^{-1}$ at pH 3 and pH 9, respectively. Ion adsorption method using KCl as index ion overestimated than the method using NaCl as index ion. The content of organic matter is the strongest factor on the value of dCEC/dpH.