• Applied Chemistry for Engineering
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• v.30 no.4
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• pp.472-478
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• 2019

A stable desalination method of the hardness substance such as $Ca^{2+}$ by controlling the total charge (TC) supplied to the membrane capacitive deionization (MCDI) cell was studied. The adsorption (1.5 V) and desorption (0.0 V) were repeated 30 times while varying the TC in the adsorption process. The concentration and pH of effluent, adsorption and desorption amounts, current densities and cell potentials were analyzed in the desalination process. The maximum allowable charge (MAC) of the carbon electrode used in MCDI cell was measured to be 46 C/g. As a result of operation at TC (40 C/g) below the MAC value, electrode reactions did not occur, resulted in the stable desalination characteristics for a long-term operation. When operating at TCs (50, 60 C/g) above the MAC value, however, the concentration and pH of effluent varied greatly. Also, the scale was formed on the electrode surface due to electrode reactions, and the electric resistance of the cell gradually increased. It was thus concluded that it is possible to remove stably the hardness substance without any electrode reactions by controlling the charge supplied to MCDI cell during the adsorption process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.821-827
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• 2001

A new low power charge-recycling ROM architecture is proposed. The charge-recycling ROM uses charge-recycling method in bit lines of ROM to save the power consumption. About 90% of the total power used in the ROM is consumed in bit lines. With the proposed method, power consumption in ROM bit lines can be reduced asymptotically to zero if the number of bit lines is infinite and the sense amplifiers detect infinitely small voltage difference. However, the real sense amplifiers cannot sense very small voltage difference. Therefore, reduction of power consumption is limited. The simulation results show that the charge-recycling ROM only consumes 13% ~ 78% of the conventional low power contact programming mask ROM.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2002.05a
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• pp.108-108
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• 2002

고분자전해질들은 제지공정에서 건조지력제, 습윤지력제, 정착제, 보류제 등으로 널리 사 용되어지고 있으며, 이러한 고분자전해질들이 보유하고 있는 관능기의 종류와 분자량에 따라 각각의 다른 특성을 발현하게 된다. 이중 관능기의 종류와 비율에 따라 결정되는 중요한 특성 중 한가지가 전하밀도이며, 이러한 전하밀도는 제지공정에 사용할 때 습부공정에서 매우 중요 한 인자라 할 수 있다. 전하밀도는 고분자전해질의 분자구조와 단량체의 종류에 따라 다르며, 적용 pH의 조건에 따라 변화하게 된다. 3급 아민과 4급 암모늄을 관능기로 가진 고분자전해질 의 경우 pH에 따른 전하밀도의 변화는 이미 잘 알려져 있는 바,3급 아민을 작용기로 가진 양이 온성 고분자전해질은 pH 9에 도달하면 양전하를 완전히 상실하고,4급 암모늄을 작용기로 가진 양이온성 고분자전해질은 pH의 변화에 상관없이 양전하가 변하지 않는다고 보고되어 있다. 본 연구에서는 양이온성과, 양쪽이온성 고분자전해질들 중 Cationic PAM, Amphoteric P PAM, PolyDADMAC, Epoxide polyamide resin, Epi-DMA copolymer 등을 시 료로 사용하였 으며, 양이온성 관능기의 종류가 다른 고분자 전해질을 이용하여 pH 변화에 따른 전하밀도의 변화를 검토하였다. 또한 일반적으로 중성 초지공정의 pH 조건은 7.0 - 8.0이며, 이 pH 조건에 서 고분자전해질의 거동은 매우 중요하다고 할 수 있다. 따라서 양이온 관능기의 종류에 따른 고분자전해질들을 pH 7.8에서 보관시간에 따른 전하밀도의 변화를 조사하였으며, 전하밀도가 변화하는 양상에 따라 양이온성 관능기의 분자구조의 변화를 검토하였다. p pH 변화에 따른 전하밀도의 변화 결과로부터 3급 아민을 포함한 양이온성 고분자전해질 뿐만 아니라,4급 암모늄을 포함한 일부의 양이온성 고분자전해질 또한 알카리 조건에서 전하 밀도가 감소하며, 강한 얄차리 조건에서는 음이온성 고분자전해질로 변화하는 현상을 관찰할 수 있었다. 이상의 결과들로부터 약 알카리(pH 7.5 - 8.0) 조건 하에서도 시간의 변화에 따라 4 급 암모늄을 포함하는 고분자전해질의 전하밀도가 변화할 것이라 예측하였으며, 실험을 통해 그 사실을 확인하였다. 알카리 조건에서 전하밀도가 변하지 않는 4급 암모늄 고분자전해질과, 전하밀도가 변하는 4급 암모늄 고분자전해질의 분자구조를 비교해 볼 때, 그 원인은 4급 암모늄 의 관능기가 고분자 연쇄로부터 가수분해 되어 나타나는 현상으로 판단된다.

• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.145-149
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• 2007

Electrochemical studies were performed for a single particle of nickel hydroxide for the cathode of Ni-MH batteries. A carbon fiber microelectrode was manipulated to make electrical contact with an alloy particle, and electrochemical experiments were performed. As a result of cyclic voltammetry, the oxidation/reduction and oxygen evolution reaction (OER) are clearly separated for a single particle. The total cathodic charge (Qred) is practically constant for the scan rate investigated, indicating that the whole particle has reacted. The total anodic charge(Qox) was larger than that of reduction reaction, and the magnitude of oxygen evolution taking place as a side reaction was enhanced at lower scan rates. As a result of galvanostatic charge and discharge measurement, the discharge capacity of single particle was found to be 250 mAh/g, value being very close to the theoretical capacity (289 mAh/g). The apparent proton diffusion coefficient(Dapp) using potential step method inside the nickel hydroxide was found to range within $3{\sim}4{\times}10^{-9}\;cm^2/s$.

• Journal of the Korean Recycled Construction Resources Institute
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• v.7 no.1
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• pp.8-15
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• 2019

When RC(Reinforced Concrete) structures are exposed to harsh environment, deterioration phenomenon occurs, and the corrosion in rebar due to chloride intrusion is known as representative deterioration, so called chloride attack. In this paper, chloride resistance performance of 2 years aged concrete is evaluated considering 3 levels of water to binder ratio(0.37, 0.42, and 0.47) and 2 levels of substitution ratio of fly ash(0% and 30%). Accelerated chloride diffusion coefficient tests referred to Tang's method, total passed charge tests referred to ASTM C 1202, and compressive strength tests referred to KS F 2405 are performed. With adaptation of the previous test results and the results from this study, time-dependent chloride diffusion characteristics are analyzed for each concrete. The FA(Fly Ash) concrete has higher chloride resistance performance than OPC(Ordinary Portland Cement) concrete. According to the evaluation standard of ASTM C 1202, the FA concrete has "Moderate" grade after 49 days while OPC concrete does "Moderate" grade after 365 days. As the results of time-parameter for chloride diffusion, OPC concrete and FA concrete show the decreasing behavior of time-parameters with increasing water to binder ratio. Also, FA concrete has 1.57~2.74 times of time-parameter than OPC concrete. That's cause is thought that the time-parameter indicates the gradient of decreasing of diffusion coefficient. FA concrete has higher time-parameters than OPC concrete by pozzolanic reaction of FA.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.981-984
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• 2005

This study is to realize its threshold voltage shift after programming operation in charge trap type SONOS memory by simulation. SONOS devices are charge trap type nonvolatile memory devices in which charge storage takes place in traps in the nitride-blocking oxide interface and the nitride layer. For simulation of their threshold voltage as a function of the memory states, traps in the nitride layer have to be defined. However, trap models in the nitride layer are not developed in commercial simulator. So, we propose a new method that can simulate their threshold voltage shift by an amount of charges induced to the electrodes as a function of a programming voltages and times as define two electrodes in the tunnel oxide-nitride interface and the nitride-blocking oxide interface of SONOS structures.

• Korean Chemical Engineering Research
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• v.55 no.3
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• pp.379-384
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• 2017

An electrochemical reduction of a mixture of NiO and rare earth oxides has been conducted to increase the reduction degree of rare earth oxides. Cyclic voltammetry (CV) measurement was carried out to determine the electrochemical reduction behavior of the mixed oxide in molten LiCl medium. Constant voltage electrolysis was performed with various supplied charges to understand the mechanism of electrochemical reduction of the mixed oxide as a working electrode. After completion of the electrochemical reduction, crystal structure of the reaction intermediates was characterized by using an X-ray diffraction method. The results clearly demonstrate that the rare earth oxide was converted to RE-Ni intermetallics via co-reduction with NiO.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.11
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• pp.1179-1185
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• 1991

Ultrathin Reoxidized Nitrided Oxides were formed by lamp heated rapid thermal annealing in oxyzen at temperatures of $1050^{\circ}C$-$1100^{\circ}C$ for 20, 40 seconds. The electrical characteristics of ultrathin films were evaluated by leakage current breakdown voltage. TDDB. FN tunneling. Nitridation and reoxidition condition dependence of charge trapping properties. i.e.. the flat band voltage shift $({\Delta}V_{FB})$ and the increase of charge-to-breakdown $(Q_{BD})$ induced by a high field stress where studied. As the results of analysis. rapid thermal reoxidation was achieved striking improvement of dielectric integrity, the charge to breakdown was increased and flat band voltage shift was reduced.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.1-1
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• 2001

DRAM에서 셀 캐패시터의 누설 전류 영향을 고려하여 소프트 에러율을 예측하였다. DRAM의 동작 과정에서 누설 전류의 영향으로 셀 캐패시터는 전하량이 감소하고, 이에 따른 소프트 에러율을 DRAM의 각 동작 모드에 대하여 계산하였다. 누설 전류가 작을 경우에는 /bit mode가 소프트 에러에 취약했지만, 누설전류가 커질수록 memory 모드가 소프트 에러에 가장 취약함을 보였다. 실제 256M급 DRAM의 구조에 적용하여, 셀 캐패시턴스, bit line 캐패시턴스, sense amplifier의 입력 전압 감도들이 변화할 때 소프트 에러에 미치는 영향을 예측하였고, 이 결과들은 차세대 DARM 연구의 최적 셀 설계에 이용될 수 있다.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.375-379
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• 2002

본 논문에서는 수 만개이상의 미지수를 필요로 하는 복잡한 3차원 구조에서의 정전용량 추출을 위한 고속화 알고리즘(Fast mutilpole method)과 결합한 효과적인 적응 삼각요소 분할법(Adaptive triangular mesh refinement algorithm)을 제안하였다. 요소세분화과정은 초기요소로 전하의 분포를 구하고, 전하밀도가 높은 영역에서의 요소세분화를 수행하여 이루어진다. 제안된 방법을 이용하여 많은 미지수를 필요로 하는 IC packaging 구조에서의 정전용량을 추출하였다.