• IEMEK Journal of Embedded Systems and Applications
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• v.6 no.5
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• pp.263-272
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• 2011

The complexity of flash memory based storage systems is high due to diverse host interfaces and other design choices such as mapping granularity, flash memory controller execution models and so on. Thus, it is possible that the actual performance after implementation is not consistent with the target performance. This paper demonstrates that the performance prediction of flash memory based storage systems is possible through performance modeling that takes into account various design parameters. In the performance modeling, the FTL, which is the core element of flash memory based storage systems, is modeled as a set of (copy-on-write) logs and their interactions. Also, the flash memory controller is modeled based on the classification proposed in the design of the Ozone flash controller. In this study, the performance model has been implemented using Simulink and experimental results are presented and analyzed.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.48 no.6
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• pp.27-34
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• 2011

In this paper, we propose an active 3D shape acquisition method based on photometric stereo using camera and flash on a smartphone. Two smartphones are used as the master and slave, in which the slave projects illumination from different locations while the master captures the images and processes photometric stereo algorithm to reconstruct 3D shape. In order to reduce the error, the smartphone's camera is calibrated to overcome the effect of the lens distortion and nonlinear camera sensor response. We apply 5-point algorithm to estimate the pose between smartphone cameras and then estimate lighting direction vector to run the photometric stereo algorithm. Experimental result shows that the proposed system enables us to use smartphone as a 3D camera with low cost and high quality.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.4 s.334
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• pp.37-44
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• 2005

In this paper, a new type of the TC-to-BC encoder for high speed flash ADC's, called the Successive Selection Encoder (SSE), is proposed. In contrast to the conventional fat tree encoder based on OR operations, the W- outputs, in the new design, are obtained directly from TC inputs through simple MUX operations. The detailed structure of the SSE has been determined systematically by the method of the logical effort and the simulation oil Hynix 0.25um process. The theoretical and experimental results show that (1) it is not required to generate one-out-of-n signals, (2) the number of gates is reduced by the factor of 1/3, and (3) the speed is improved more than 2-times, compared to the fat tree encoder. It is speculated that the SSE proposed in this study is an effective solution for bottleneck problems in high speed ADCs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.449-453
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• 2010

In this paper, the electrical characteristics of Fin-type SONOS(silicon-oxide-nitride-oxide-silicon) flash memory device with different trapping layers are analyzed in depth. Two kinds of trapping layers i.e., silicon nitride($Si_3N_4$) and hafnium oxide($HfO_2$) are applied. Compared to the conventional Fin-type SONOS device using the $Si_3N_4$ trapping layer, the Fin-type SOHOS(silicon-oxide-high-k-oxide-silicon) device using the $HfO_2$ trapping layer shows superior program/erase speed. However, the data retention properties in SOHOS device are worse than the SONOS flash memory device. Degraded data retention in the SOHOS device may be attributed to the tunneling leakage current induced by interface trap states, which are supported by the subthreshold slope and low frequency noise characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.676-680
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• 2010

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.8-16
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• 2010

NAND multilevel cell (MLC) flash memory is widely issued because it can increase the capability of storage by storing two or more bits to a single cell. However if a number of levels in a cell increases, some physical features like cell to cell interference result cell voltage shift and it is known that a VT shift is unidirectional. To reduce errors by the effects, we can consider error correcting codes(ECC) or signal processing methods. We focus signal processing methods for the cell to cell interference voltage shift effects and propose the algorithms which reduce the effects of the voltage shift by estimating it and making level read voltages be adaptive. These new algorithms can be applied with ECC at the same time, therefore these algorithms are efficient for MLC error correcting ability. We show the bit error rate simulation results of the algorithms and compare the performance of the algorithms.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.16-23
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• 2010

This paper presents 6bit 250MS/s flash A/D converter which can be applied to wireless communication system. To solve the problem of large power consumption in flash A/D converter, control algorithm by input signal level is used in comparator stage. Also, input voltage range detector circuit is used in reference resistor array to minimize the dynamic power consumption in the comparator. Compared with the conventional A/D converter, the proposed A/D converter shows 4.3% increase of power consumption in analog and a seventh power consumption in digital, which leads to a half of power consumption in total. The A/D converter is implemented in a $0.18{\mu}m$ CMOS 1-poly 6-metal technology. The measured results show 106mW power dissipation with 1.8V supply voltage. It shows 4.1bit ENOB at sampling frequency 250MHz and 30.27MHz input frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.57-64
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• 2011

To adjust the difference of bandwidth between host interface and NAND flash memory, DRAM is adopted as the buffer management in SSD (Solid-state Disk). In this paper, we propose cost-effective techniques to enhance SSD performance instead of using expensive high bandwidth DRAM. The SSD data can be classified into three groups such as user data, meta data for handling user data, and FEC(Forward Error Correction) parity/ CRC(Cyclic Redundancy Check) for error control. In order to improve the performance by considering the features of each data, we devise a flexible burst control method through monitoring system and a page based FEC parity/CRC application. Experimental results show that proposed methods enhance the SSD performance up to 25.9% with a negligible 0.07% increase in chip size.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.57-64
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• 2008

In this paper, we propose a system-level simulator for the performance analysis of a Solid-State Disk (SSD) in PC environment by using TLM (Transaction Level Modeling) method. Our method provides quantitative analysis for a variety of architectural choices of PC system as well as SSD. Also, it drastically reduces the analysis time compared to the conventional RTL (Register Transfer Level) modeling method. To show the effectiveness of the proposed simulator, we performed several explorations of PC architecture as well as SSD. More specifically, we measured the performance impact of the hit rate of a cache buffer which temporarily stores the data from PC. Also, we analyzed the performance variation of SSD for various NAND Flash memories which show different response time with our simulator. These experimental results show that our simulator can be effectively utilized for the architecture exploration of SSD as well as PC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.