• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.82-90
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• 2014

In this paper, a couple of 4-channel differential transimpedance amplifier arrays are realized in a standard 0.18um CMOS technology for the applications of linear LADAR(laser detection and ranging) systems. Each array targets 1.25-Gb/s operations, where the current-mode chip consists of current-mirror input stage, a single-to-differential amplifier, and an output buffer. The input stage exploits the local feedback current-mirror configuration for low input resistance and low noise characteristics. Measurements demonstrate that each channel achieves $69-dB{\Omega}$ transimpedance gain, 2.2-GHz bandwidth, 21.5-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -20.5-dBm), and the 4-channel total power dissipation of 147.6-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations. Meanwhile, the voltage-mode chip consists of inverter input stage for low noise characteristics, a single-to-differential amplifier, and an output buffer. Test chips reveal that each channel achieves $73-dB{\Omega}$ transimpedance gain, 1.1-GHz bandwidth, 13.2-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -22.8-dBm), and the 4-channel total power dissipation of 138.4-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.87-97
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• 2016

This work proposes a time-shared 10b DAC based on a two-step resistor string to minimize the effective area of a DAC channel for driving each AMOLED display column. The proposed DAC shows a lower effective DAC area per unit column driver and a faster conversion speed than the conventional DACs by employing a time-shared DEMUX and a ROM-based two-step decoder of 6b and 4b in the first and second resistor string. In the second-stage 4b floating resistor string, a simple current source rather than a unity-gain buffer decreases the loading effect and chip area of a DAC channel and eliminates offset mismatch between channels caused by buffer amplifiers. The proposed 1-to-24 DEMUX enables a single DAC channel to drive 24 columns sequentially with a single-phase clock and a 5b binary counter. A 0.9pF sampling capacitor and a small-sized source follower in the input stage of each column-driving buffer amplifier decrease the effect due to channel charge injection and improve the output settling accuracy of the buffer amplifier while using the top-plate sampling scheme in the proposed DAC. The proposed DAC in a $0.18{\mu}m$ CMOS shows a signal settling time of 62.5ns during code transitions from '$000_{16}$' to '$3FF_{16}$'. The prototype DAC occupies a unit channel area of $0.058mm^2$ and an effective unit channel area of $0.002mm^2$ while consuming 6.08mW with analog and digital power supplies of 3.3V and 1.8V, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.48-57
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• 2006

This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.

• Journal of IKEEE
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• v.13 no.1
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• pp.77-86
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• 2009

A wavelet Electrocardiogram(ECG) detector and its analog-to-digital converter(ADC) for low-power implantable cardiac pacemakers are presented in this paper. The proposed wavelet-based ECG detector consists of a wavelet decomposer with wavelet filter banks, a QRS complex detector of hypothesis testing with wavelet-demodulated ECG signals, and a noise detector with zero-crossing points. To achieve high-detection performance with low-power consumption, the multi-scaled product algorithm and soft-threshold algorithm are efficiently exploited. To further reduce the power dissipation, a low-power ADC, which is based on a Successive Approximation Register(SAR) architecture with an on/off-time controlled comparator and passive sample and hold, is also presented. Our algorithmic and architectural level approaches are implemented and fabricated in standard $0.35{\mu}m$ CMOS technology. The testchip shows a good detection accuracy of 99.32% and very low-power consumption of $19.02{\mu}W$ with 3-V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.3
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• pp.152-162
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• 2003

In this paper, Binary to Quaternary Converter(BQC), Quaternary to Binary Converter(QBC) and Quaternary inverter circuit, which is the basic logic gate, have been proposed based on voltage mode. The BQC converts the two bit input binary signals to one digit quaternary output signal. The QBC converts the one digit quaternary input signal to two bit binary output signals. And two circuits consist of Down-literal circuit(DLC) and combinational logic block(CLC). In the implementation of quaternary inverter circuit, DLC is used for reference voltage generation and control signal, only switch part is implemented with conventional MOS transistors. The proposed circuits are simulated in 0.35 ${\mu}{\textrm}{m}$ N-well doubly-poly four-metal CMOS technology with a single +3V supply voltage. Simulation results of these circuit show 250MHz sampling rate, 0.6mW power consumption and maintain output voltage level in 0.1V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.330-333
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• 2016

In this paper, we propose 77 GHz power amplifier for long range automotive collision avoidance radar using 65 nm CMOS process. The proposed circuit has a 3-stage single power amplifier which includes common source structure and transformer. The measurement results show 18.7 dB maximum voltage gain at 13 GHz 3 dB bandwidth. The measured maximum output power is 10.2 dBm, input $P_{1dB}$ is -12 dBm, output $P_{1dB}$ is 5.7 dBm, and maximum power add efficiency is 7.2 %. The power amplifier consumes 140.4 mW DC power from 1.2 V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.77-83
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• 2009

In this paper, a selective feedback low-noise amplifier (LNA) has been realized in a $0.18{\mu}m$ CMOS technology to cover a number of wireless multi-standards. By exploiting notch filter, the SF-LNA demonstrates the measured results of the power gain (S21) of 11.5~13dB and the broadband input/output impedance matching of less than -10dB within the frequency bands of 820~960MHz and 1.5~2.5GHz, respectively. The chip dissipates 15mW from a single 1.8V supply, and occupies the area of $1.17\times1.0mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.403-409
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• 2013

In this work, a CMOS two stage differential power amplifier which includes Marchand balun, transformer and injection-locked buffer is presented. The power amplifier is targeted for 70 GHz frequency band and fabricated using 65 nm technology. The measurement results show 8.5 dB maximum voltage gain at 71.3 GHz and 7.3 GHz 3 dB bandwidth. The measured maximum output power is 8.2 dBm, input $P_{1dB}$ is -2.8 dBm, output $P_{1dB}$ is 4.6 dBm and maximum power added efficiency is 4.9 %. The power amplifier consumes 102 mW DC power from 1.2 V supply voltage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.8A
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• pp.712-719
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• 2012

This paper presents Single-bit Third order Delta-Sigma Modulator, which can be applied to the Low speed High resolution ADC in Audio signal Process System. Whereas the Operational Amplifier in modulator consumed static power dissipation in operating, this modulator used Switching on/off techniques, which makes the Power dissipation of the modulator reduced. Also proposed modulator minimizes frequency characteristic variation by optimizing switch position. And this modulator chooses Single-bit type to guarantee stability. The designed ADC went through 0.35um CMOS n-well 1-poly 4-metal process to be a final product, and the final product has shown 17.1mW of power dissipation with 3.3V of Supply Voltage, 6.4MHz of conversion rate. And 84.3dB SNDR and 13.5bit ENOB with 20KHz of input frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.580-587
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• 2003

In this paper, we introduce a novel model to analyze the linearity of a TW-EAM (traveling-wave electroabsorption modulator). The device length, microwave loss (ML), and internal reflection (IR) due to impedance mismatch have effect on the linearity of a TW-EAM. The longer devices have characteristics of lower biases with minimum IMDS (intermodulation distortions). ML decreases the output power as well as the IMD value. Internal reflection has different nonlinear characteristics according to the wavelength of the input frequency and the device length. There is little change in SFDR (spurious-free dynamic range) due to ML or IR. As a result, for a 50 GHz band RF-optical communication system, a 0.8 mm-long TW-EAM with the lowest ML would have better properties by using n, which is caused by impedance, mismatch at the output port.