• Title/Summary/Keyword: 전압 측정

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Flashover Characteristics of the Horizontal Air Gaps Caused by Combustion Flames (연소화염에 의한 수평배치 공기갭의 섬락전압 특성)

  • 김인식;김이국;김충년;지승욱;이상우;이광식
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.1
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    • pp.27-34
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    • 2002
  • In this paper, characteristics of the ac and dc flashover voltage in the horizontal air gap of a needle-needle electrode system were investigated when the combustion flame was present near the high-voltage electrode. In order to examine the flashover phenomena and the corona inception voltages caused by flame we measured the voltage and current waveforms when the corona and the flashover was occurred. We also observed, as increasing the applied voltages, the deflection or fluctuation phenomena in the shape of flames caused by the corona wind and the coulomb's force. As the results of an experimental investigation, we found that the reduction of flashover voltages, in comparison with the no-flame case, are 62.7[%] for k=1.0, 34.2[%] for h=5[cm], 27.3[%] for h=7[cm] and 21.4[%] for h=9[cm] when ac voltage is applied.

A Jitter Suppressed DLL-Based Clock Generator (지연 고정 루프 기반의 지터 억제 클록 발생기)

  • Choi, Young-Shig;Ko, Gi-Yeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.7
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    • pp.1261-1266
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    • 2017
  • A random and systematic jitter suppressed delay locked loop (DLL)-based clock generator with a delay-time voltage variance converter (DVVC) and an averaging circuit (AC) is presented. The DVVC senses the delay variance of each delay stage and generates a voltage. The AC averages the output voltages of two consecutive DVVCs to suppress the systematic and random delay variance of each delay stage in the VCDL. The DVVC and AC averages the delay time of successive delay stages and equalizes the delay time of all delay stages. In addition, a capacitor with a switch working effectively as a negative feedback function is introduced to reduce the variation of the loop filter output voltage. Measurement results of the DLL-based clock generator fabricated in a one-poly six-metal $0.18{\mu}m$ CMOS process shows 13.4-ps rms jitter.

Dielectric Characteristics of SF6 and Dry-Air Gases under Lightning Impulse Voltage (뇌임펄스전압에 대한 SF6와 dry-air의 절연특성)

  • Li, Feng;Yoo, Yang-Woo;Kim, Dong-Kyu;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.8
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    • pp.142-149
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    • 2010
  • This paper describes dielectric characteristics of $SF_6$ and dry-air gases under lightning impulse voltages in a quasi-uniform electric field. In order to simulate to a quasi-uniform electric field, electric field utilization factor of the used sphere-plane electrode is 71[%]. The gas pressure of $SF_6$ ranges from 0.1 to 0.2[MPa] and that of dry-air ranges from 0.2 to 0.6[MPa]. Electrical breakdown voltages of $SF_6$ and dry-air gases are measured and analyzed as functions of the polarity of lightning impulse voltage and gas pressure. As a result, the electrical breakdown voltage of both gases under the positive lightning impulse voltage is higher than that under the negative one. The electrical breakdown voltage in $SF_6$ is almost higher than 2.67 times compared to dry-air. The results presented in this paper can be used as a useful information to evaluate the capability of alternative insulation gases for $SF_6$ in power distribution equipment with prominent ability against lightning surge.

Motion Characteristics of Particle in Model GIS (모의 GIS내 금속이물의 거동특성)

  • 김경화;이재걸;곽희로
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.4
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    • pp.152-159
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    • 1999
  • This paper describes the rmtion characteristics of a particle in GIS under AC voltage. To measure the motion characteristics of the particle, a model gas chamber and parallel plain electrodes were designed and manufactured lift-off voltages of wire and spherical particles on the electrode were calculated and rreasured, and electric charge was calculated. By using a high speed carrera, the rmtion characteristics of various particles with aw}ied voltages, such as motion pattern, lift-off time, lift-off height, were analyzed 1be lift-off voltages were greatly affected by diarreters of wire and spherical particles. At voltage around lift-off voltage, the stand-up particle in vertical state rmved up and down between electrodes and the height of the lift-off particle was low. At voltage around breakdown voltage, the particle repeated vertical rotation a few times while they were being lifted off, and then, they were floating between the electrodes.trodes.

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An Implementation of Temperature Independent Bias Scheme in Voltage Detector (온도에 무관한 전압검출기의 바이어스 구현)

  • Moon, Jong-Kyu;Kim, Duk-Gyoo
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.6
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    • pp.34-42
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    • 2002
  • In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

Implementation of Power Cable Diagnostic Simulator using VLF (VLF를 활용한 전력케이블 진단 시뮬레이터 구현)

  • Kim, Kuk;Eo, Ik-soo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.8
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    • pp.593-602
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    • 2020
  • Power cables installed in domestic factories or underground can cause accidents depending on the manufacturing process, installation, and environmental conditions during use. When an accident occurs in a power cable, it can cause enormous economic loss and social confusion. Hence, the importance of preventive management of the cable through diagnosis is increasing to prevent it. Therefore, in this paper, a diagnostic sample cable was produced by simulating a part that could be a problem due to the installation, manufacturing defects, or deterioration of cables that can occur in the field. Dielectric loss Tangent (tan 𝛿; TD), and Partial Discharge(PD) tests were performed. Partial discharge and AC (60Hz) withstand voltage equipment using High-Frequency Current Transformer (HFCT) were applied After applying a VLF (Very Low Frequency) power supply with a frequency of 0.1Hz was applied. As a result, B and C phase defect samples at a 2.0U0 voltage through the VLF could measure the internal partial discharge in the A-phase normal sample cable from the noise at a 0.5U0 to 2.0U0 voltage. In addition, the 1.5U0 voltage was measured through the AC (60Hz) withstand voltage equipment of the commercial frequency to verify its effectiveness. Partial discharge in the run-off state was measured at a voltage of 1.0U0, and there was a risk when installing the equipment. AC power equipment showed a difficulty of movement by volume or weight. The diagnostic method, through the VLF of the quadrant state, revealed its safety and effectiveness.

Characterization Method for Testing Circuit Patterns on MCM/PCB Modules with Electron Beams of a Scanning Electron Microscope (MCM/PCB 회로패턴 검사에서 SEM의 전자빔을 이용한 측정방법)

  • Kim, Joon-Il;Shin, Joon-Kyun;Jee, Yong
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.9
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    • pp.26-34
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    • 1998
  • This paper presents a characterization method for faults of circuit patterns on MCM(Multichip Module) or PCB(Printed Circuit Board) substrates with electron beams of a SEM(Scanning Electron Microscope) by inducing voltage contrast on the signal line. The experimentation employes dual potential electron beams for the fault characterization of circuit patterns with a commercial SEM without modifying its structure. The testing procedure utilizes only one electron gun for the generation of dual potential electron beams by two different accelerating voltages, one for charging electron beam which introduces the yield of secondary electron $\delta$ < 1 and the other for reading beam which introduces $\delta$ > 1. Reading beam can read open's/short's of a specific net among many test nets, simultaneously discharging during the reading process for the next step, by removing its voltage contrast. The experimental results of testing the copper signal lines on glass-epoxy substrates showed that the state of open's/short's had generated the brightness contrast due to the voltage contrast on the surface of copper conductor line, when the net had charged with charging electron beams of 7KV accelerating voltages and then read with scanning reading electron beams of 2KV accelerating voltages in 10 seconds. The experimental results with Au pads of a IC die and Au plated Cu pads of BGA substrates provided the simple test method of circuit lines with 7KV charging electron beam and 2KV reading beam. Thus the characterization method showed that we can test open and short circuits of the net nondestructively by using dual potential electron beams with one SEM gun.

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Implementation of Capacitance Measurement Equipment for Fault Diagnosis of Multi-channel Ultrasonic Probe (다중채널 초음파 프로브 고장진단을 위한 커패시턴스 측정 장치 구현)

  • Kang, Bub-Joo;Kim, Yang-soo
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.1
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    • pp.175-184
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    • 2016
  • In this paper, we propose the method to measure the capacitances using not LCR meter but capacitance to voltage(C/V) conversion. And we design the analog MUX circuits that convert 192 channels to 6 MUX channels in order to implement the diagnosis of multi-channel ultrasonic probe. This paper derives the conversion function that converts the digital voltage of each MUX channel to the capacitance using the least squares method because the circuit characteristics that convert the voltage of each MUX channel to the capacitance are different. The developed prototype illustrates the performance test results that the measure times are measured by within 4sec and the measure error rates of maximum, minimum, and average values are within 5% in terms of the repeated measurements of all 192 channels.

실리콘 다이오드를 적용한 다채널 중성 입자 분석기 개발

  • Cheon, Se-Min;Jwa, Sang-Beom;Gang, In-Je;Lee, Heon-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.211-212
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    • 2011
  • 플라즈마를 제어하기 위해서는 플라즈마의 온도, 밀도, 에너지 분포등과 같은 플라즈마의 특성을 정확히 측정할 수 있어야한다. 핵융합발전에서는 플라즈마를 발생하기 위하여 플라즈마의 온도, 밀도 등 각종 변수들을 시공간적으로 계측, 분석할 수 있는 진달설비를 사용하고 있으며, 정확한 플라즈마 제어와 측정을 위한 새로운 진단기술을 개발하고 있다. 그리고 중요한 변수중에 하나인 플라즈마 이온온도를 측정하기 위해 중성입자 검출법이 잘 알려져 있다. 이 실험은 수소 중성입자가 토카막 내부의 플라즈마 이온과 충돌하면서 생성된 고속 중성입자의 에너지를 분석하는 실험이다. 본 연구의 실험방법은 수소 중성입자를 이온빔 장치에서 이온화 시킨 후 자체 제작한 가속기를 통하여 가속시켜 에너지 특성을 분석을 하는 것이다. 본 연구의 실험장치로 에너지 교정용 100 keV 이온빔 소스를 제작 하였고 이온빔 장치 내부에 수소기체를 주입하고 기체방전을 일으켜 플라즈마를 발생시켰다. 이온빔 외부에는 팬을 설치하고 전도성이 강한 물 대신 전도성이 약한 오일을 사용하여 냉각 하였다. 이온빔 장치와 결합될 이온 가속장치는 지름 300 mm, 두께 2 mm의 원형 구리판을 여러층으로 쌓아 전극으로 제작하였고 전극과 전극 사이에서 코로나 방전과 스파크를 방지하기 위해 전극 둘레에 코로나링을 설치 하였다. 또한 전극 사이마다 1G${\Omega}$의 저항을 설치한 후 고전압을 생성하여 이온 가속 효율을 증대시켰다. 진공시스템으로는 Alcatel사의 CFF100 터보분자 펌프와 우성진공사의 MVP24 진공로타리펌프를 결합하여 사용하였으며, 진공도측정은 Alcatel사의 ACS1000 장치를 사용하였다. 고진공후 고속 중성입자의 이온화와 에너지 측정을 위한 전하교환기를 설치하였다. 전하교환기로는 진공시스템을 별도로 설치하고 비용이 비교적 많이 드는 기체형 전하교환기 대신 소형화가 가능하고 유지보수가 좋은 고체형 전하교환기 제작하여 실험 하였다. 전하교환기에서 이온화된 고속 중성입자가 전기장이나 자장에 영향을 받았을때 에너지분포를 디텍터를 통해 측정하였다. 즉, 이온화된 중성입자의 에너지가 실리콘 다이오드를 통해 전압 펄스 신호로 변환되고 이차 증폭기를 통해 전압 펄스 신호들이 증폭한다. 에너지 측정을 위한 디텍터는 소형화가 가능하고 비용이 비교적 적게 드는 실리콘 다이오드를 설치하였다. 본 연구결과 중성입자 에너지 분석 장치가 실제 핵융합 장치의 플라즈마 이온온도와 특성 측정에 적용할 수 있으며, 앞으로 개발될 여러 형태의 응용 플라즈마 발생장치의 플라즈마 진단에 이용될 것으로 기대한다.

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Effect of Nitrogen Implantation on characteristics of gate oxide (질소 주입에 따른 게이트 산화막의 특성에 미치는 영향)

  • Chung, Seoung-Ju;Kwack, Gae-Dal
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1833-1835
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    • 1999
  • 게이트 산화막의 breakdown 전압을 나추기 위해 질소 주입을 하는 과정은 실리콘층에 패드 산화막을 성장시킨 후 실리콘과 패드 산화막 층사이에 질소 이온을 주입하였다. 이온 주입 후 패드 산화막 층을 제거하고 그 위에 게이트 산화막 층을 성장시키는 방법을 사용하였다. 이러한 방법을 질소 이온의 농도를 변화시키면서 여러번 반복하였다 그래서 질소 이온 농도의 변화에 따른 게이트 산화막 두께의 변화를 측정하였다. 그 결과 질소 농도이 따른 게이트 산화막 성장비율을 알아 보았다. 그리고 질소 농도의 변화에 따른 Breakdown 전압과 누설 전류의 변화를 측정하였다. 또한 앞에서 말한 질소 주입 공정이 들어가면서 추가적으로 발생하는 과정에 대해 고찰하였다.

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