• Title/Summary/Keyword: 전압 이득

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A Design of Microstrip U-slotted Patch Antenna (마이크로스트립 U슬롯 패치 안테나의 설계)

  • 이진선;강치운;윤서용;이봉석;김우수;이문수
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.3 no.3
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    • pp.509-516
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    • 1999
  • In this paper, it is designed a microstrip U-slotted patch antenna with double resonances to enhance the bandwidth. In the design of an U-slotted patch antenna, there are considered the input impedance, the width of patch, the total length of the slot, the height of foam, the position of the probe and the radius of feed pin. The broadband behavior of antenna can be obtained by adjusting the length and width of the slot. The radiation from the antenna is linear polarized with the E-paine parallel to the vertical slots and the H plane parallel to horizontal slot. The radiation pattern, impedance locus, and VSWR of the antenna are calculated using "ENSEMBLE" software, and compared with the experimental results. Experimental results show that the bandwidth for VSWR $\le$ 2:1 is about 28.6%, a directivity 14.18dBi at 6.040GHz. 6.040GHz.

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A SAW-less GPS RX Front-end using an Automatic LC Calibrator (자동변환 LC 캘리브레이터를 이용한 SAW 필터 없는 GPS RX 프론트앤드 구현)

  • Kim, Yeon-Bo;Moon, Hyunwon
    • Journal of Korea Society of Industrial Information Systems
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    • v.21 no.1
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    • pp.43-50
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    • 2016
  • In this paper, new automatic LC calibrator is proposed for realizing a passive LC filter with almost constant frequency characteristic regardless of the PVT variations. The SAW-less GPS RX front-end is implemented using a 65nm CMOS process using the proposed LC calibrator. Also, new dual-mode low noise amplifier (LNA) structure is proposed to generate the RF signal required for the LC calibrator. The characteristics of the implemented GPS RX front-end show the voltage gain of about 42.5 dB, noise figure of below 1.35 dB, the blocker input P1dB of -24 dBm in case of the worst blocker signal at 1710 MHz frequency, while it consumes 7 mA current at 1.2 V power supply voltage.

A High Speed CMOS Arrayed Optical Transmitter for WPON Applications (WPON 응용을 위한 고속 CMOS어레이 광트랜스미터)

  • Yang, Choong-Reol;Lee, Sang-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38B no.6
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    • pp.427-434
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    • 2013
  • In this paper, the design and layout of a 2.5 Gbps arrayed VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed. In this paper, a 4 channel 2.5 Gbps VCSEL (vertical cavity surface emitting laser) driver array with automatic optical power control is implemented using $0.18{\mu}m$ CMOS process technology that drives a $1550{\mu}m$ high speed VCSEL used in optical transceiver. To enhance the bandwidth of the optical transmitter, active feedback amplifier with negative capacitance compensation is exploited. We report a distinct improvement in bandwidth, voltage gain and operation stability at 2.5Gbps data rate in comparison with existing topology. The 4-CH chip consumes only 140 mW of DC power at a single 1.8V supply under the maximum modulation and bias currents, and occupies the die area of $850{\mu}m{\times}1,690{\mu}m$ excluding bonding pads.

Fabrication of Electrostatic Track-Following Microactuator for Hard Disk Drive Using SOI (SOI를 이용한 하드 디스크 드라이브용 정전형 트랙 추적 마이크로 액추에이터의 제작)

  • Kim, Bong-Hwan;Chun, Kuk-Jin;Seong, Woo-Kyeong;Lee, Hyo-Jung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.8
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    • pp.1-8
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    • 2000
  • We have achieved a high aspect ratio track-following microactuator (TFMA) which is capable of driving 0.3 ${\mu}m$ magnetic head for hard disk drive (HDD). it was fabricated on silicon on insulator (SOI) wafer with 20 ${\mu}m$ trick active silicon and 2 ${\mu}m$ thick thermally grown oxide and piggyback electrostatic principle was used for driving TFMA. The first vibration mode frequency of TFMA was 18.5 kHz which is enough for a recording density of higher than 10 Gb/in$^2$. Its displacement was 1.4 ${\mu}m$ when 15 V dc bias plus 15 V ac sinusoidal driving input was applied and its electrostatic force was 50 N. The fabricated actuator shows 7.51 dB of gain margin and 50.98$^{\circ}$ of phase margin for 2.21 kHz servo-bandwidth.

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A 800MHz~5.8GHz Wideband CMOS Low-Noise Amplifier (800MHz~5.8GHz 광대역 CMOS 저잡음 증폭기 설계)

  • Kim, Hye-Won;Tak, Ji-Young;Lee, Jin-Ju;Shin, Ji-Hye;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.12
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    • pp.45-51
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    • 2011
  • This paper presents a wideband low-noise amplifier (LNA) covering 800MHz~5.8GHz for various wireless communication standards by utilizing in a 0.13um CMOS technology. Particularly, the LNA consists of two stages to improve the low-noise characteristics, that is, a cascode input stage and an output buffer with noise cancellation technique. Also, a feedback resistor is exploited to help achieve wideband impedance matching and wide bandwidth. Measure results demonstrate the bandwidth of 811MHz~5.8GHz, the maximum gain of 11.7dB within the bandwidth, the noise figure of 2.58~5.11dB. The chip occupies the area of $0.7{\times}0.9mm^2$, including pads. DC measurements reveal the power consumption of 12mW from a single 1.2V supply.

Characterization and Color Reproduction Based on Average Picture Level if PDP Displays (평균화면밝기에 기반한 PDP 디스플레이의 특성화 및 색 재현)

  • Kwon, Oh-Seol;Ko, Kyung-Woo;Ha, Yeong-Ho
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.45 no.5
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    • pp.9-17
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    • 2008
  • This paper proposes a method of color reproduction considering the viewing conditions of a PDP TV. Because of a change of peripheral environments by a temporal and spatial location of observers, the ambient lightings should be considered in the process of color reproduction of displays. A conventional method enhances the contrast and saturation of images by controlling voltage gains in each channel, so that there is a limit to implementing the phenomenon of human adaptation. This method also faces difficulties in reproducing the perceived colors under a variety of viewing conditions. Accordingly, in order to solve this problem, we first characterize the device by considering the brightness and the flare effect. The chromatic adaptation is finally applied to reproduce colors in a PDP TV using the information from the viewing conditions by the sensor. The images reproduced by the proposed method are visually more superior to those reproduced by a conventional method in the experiments.

Design and Fabrication of a GaAs MESFET MMIC Transmitter for 2.4 GHz Wireless Local Loop Handset (2.4 GHz WLL 단말기용 GaAs MESFET MMIC 송신기 설계 및 제작)

  • 성진봉;홍성용;김민건;김해천;임종원;이재진
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.1
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    • pp.84-92
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    • 2000
  • A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

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Orthogonally-Polarized Dual-Band Switchable Microstrip Antenna Using PIN-Diode Loaded H-Shape Slot (PIN 다이오드가 구비된 H 모양 슬롯을 이용한 직교편파 이중대역 변환 마이크로스트립 안테나)

  • Lim, Eunsook;Pyo, Seongmin
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.2
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    • pp.156-162
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    • 2016
  • This paper proposes a novel orthogonally-polarized dual-band switchable microstrip antenna. The proposed antenna consists of a perpendicular feeding network and an radiator with a PIN-installed H-shaped slot. When the states of one single PIN diode in H-slot are controlled by bias voltages, the controlled physical geometry of the H-slot determines the operation frequencies of switchable 1.80 GHz and 2.43 GHz for vertically polarized linear polarization and fixed 2.06 GHz for horizontally linear polarization. The implemented antenna experimentally demonstrates reconfigurable dual-band capability by means of controling the states of the PIN diode. The simulation and measurement results of the implemented antenna have been in good agreement with the reflection coefficients, realized antenna gains and far-field radiation patterns at each of the PIN diode states.

Design of Multi-Band Low Noise Amplifier Using Switching Transistors for 2.4/3.5/5.2 GHz Band (스위칭 트랜지스터를 이용하여 2.4/3.5/5.2 GHz에서 동작하는 다중 대역 저잡음 증폭기 설계)

  • Ahn, Young-Bin;Jeong, Ji-Chai
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.2
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    • pp.214-219
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    • 2011
  • This paper presents a multi-band low noise amplifier(LNA) with switching operation for 2.4, 3.5 and 5.2 GHz bands using CMOS 0.18 um technology. The proposed circuit uses switching transistors to achieve the input and output matching for multi-band. By using the switching transistors, we can adjust the transconductance, gate inductance and gatesource capacitance at input stage and total output capacitance at output stage. The proposed LNA exhibits gain of 14.2, 12 and 11 dB and noise figure(NF) of 3, 2.9 and 2.8 dB for 2.4, 3.5 and 5.2 GHz, respectively.

Design of Wideband Ku-band Low Noise Down-converter for Satellite Broadcasting (Ku-band 광대역 위성방송용 LNB 설계)

  • Hong, Do-Hyeong;Mok, Gwang-Yun;Park, Gi-Won;Rhee, Young-Chul
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.10a
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    • pp.941-944
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    • 2015
  • In this paper study for VSAT(very small aperture terminal) LNB(low noise block). ship LNB was demanded high stability and low noise figure. We designed FEM(Front-End Module) that was operated multi-band. FEM designed was constructed in a multi-band low noise receiver amplifier, a frequency converter, IF amplifier, Voltage Control Oscillator signal generating circuit four circuit using. To convert the multi-band 2.05GHz band, it generates four local oscillator signals, the four(band1, band2, band3, band4) designed to output an IF signal developed conversion apparatus, the conversion gain 64dB, noise figure 1dB or less, output P1dB 15dBm or more, phase noise showed -73dBc@100Hz.

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