• Title/Summary/Keyword: 전류 모드 신호 처리

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Low-power Single-Chip Current-to-Voltage Converter for Wireless OFDM Terminal Modem (OFDM 용 무선통신단말기 모뎀의 저소비 전력화를 위한 단일칩용 I-V 컨버터)

  • Kim, Seong-Kweon
    • Journal of the Korean Institute of Intelligent Systems
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    • v.17 no.4
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    • pp.569-574
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    • 2007
  • 최근 많은 광대역 유무선 통신 응용분야에서 OFDM(Orthogonal Frequency Division Multiplexing) 방식을 표준기술로 채택하고 있다. OFDM 방식의 고속 무선 데이터 통신을 위한 FFT 프로세서는 일반적으로 DSP(Digital Signal Processing)로 구현되었으나, 큰 전력 소비를 필요로 한다. 따라서, OFDM 통신방식의 단점인 전력문제를 보완하기 위해서 전류모드 FFT LSI가 제안되었고, 저소비전력 전류모드 FFT LSI를 동작시키기 위해서는 전류모드를 전압모드로 바꾸는 VIC(Voltage to Current Converter) 그리고 다시 전류모드를 전압모드로 바꾸어 주는 IVC(Current to Voltage Converter)가 필요하다. 그러나, OP-AMP로 구현되는 종래의 IVC는 회로규모가 크고, 전력소비가 크며, LSI 내에 크고 정확한 높은 저항을 필요로 한다. 또한 전류모드신호처리에서 많이 이용되는 Current Mirror 회로 등의 출력단자로부터 전류신호를 입력받은 경우, 입력단자간의 전위차가 발생하며, DC offset 전류가 발생하는 등의 문제점을 갖는다. 따라서 본 연구에서는 저전력 동작이 가능하고, 향후, single chip 응용이 가능한 IVC를 $0.35{\mu}m$ 공정에서 설계함으로서, $0.35{\mu}m$ 공정에서의 전류모드 FFT LSI의 전압모드 출력이 가능해졌다 설계된 IVC는 FFT LSI의 출력이 디지털신호로 환산한 ${\pm}1$인 점을 감안하여, 전류모드 FFT LSI의 출력이 $13.65{\mu}A$ 이상일 때에 3.0V의 전압을 출력하고, FFT LSI의 출력이 $0.15{\mu}A$ 이하일 때에 0.5V 이하의 전압을 출력하도록 하였으며, IVC의 총 소비전력은 약 1.65mV이하로 평가되었다.

Current-Mode Serial-to-Parallel and Parallel-to-Serial Converter for Current-Mode OFDM FFT LSI (전류모드 OFDM FFT LSI를 위한 전류모드 직병렬/병직렬 변환기)

  • Park, Yong-Woon;Min, Jun-Gi;Hwang, Sung-Ho
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.9 no.1
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    • pp.39-45
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    • 2009
  • OFDM is used for achieving a high-speed data transmission in mobile wireless communication systems. Conventionally, fast Fourier transform that is the main signal processing of OFDM is implemented using digital signal processing. The DSP FFT LSI requires large power consumption. Current-mode FFT LSI with analog signal processing is one of the best solutions for high speed and low power consumption. However, for the operation of current-mode FFT LSI that has the structure of parallel-input and parallel-output, current-mode serial-to-parallel and parallel-to-serial converter are indispensable. We propose a novel current-mode SPC and PSC and full chip simulation results agree with experimental data. The proposed current-mode SPC and PSC promise the wide application of the current-mode analog signal processing in the field of low power wireless communication LSI.

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Design of Low-power Serial-to-Parallel and Parallel-to-Serial Converter using Current-cut method (전류 컷 기법을 적용한 저전력형 직병렬/병직렬 변환기 설계)

  • Park, Yong-Woon;Hwang, Sung-Ho;Cha, Jae-Sang;Yang, Chung-Mo;Kim, Sung-Kweon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.34 no.10A
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    • pp.776-783
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    • 2009
  • Current-cut circuit is an effective method to obtain low power consumption in wireless communication systems as high speed OFDM. For the operation of current-mode FFT LSI with analog signal processing essentially requires current-mode serial-to-parallel/parallel-to-serial converter with multi input and output structure. However, the Hold-mode operation of current-mode serial-to-parallel/parallel-to-serial converter has unnecessary power consumption. We propose a novel current-mode serial-to-parallel/parallel-to-serial converter with current-cut circuit and full chip simulation results agree with experimental data of low power consumption. The proposed current-mode serial-to-parallel/parallel-to-serial converter promise the wide application of the current-mode analog signal processing in the field of low power wireless communication LSI.

The Optimization of Current Mode CMOS Multiple-Valued Logic Circuits (전류구동 CMOS 다치 논리 회로설계 최적화연구)

  • Choi, Jai-Sock
    • Journal of the Institute of Convergence Signal Processing
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    • v.6 no.3
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    • pp.134-142
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    • 2005
  • The implementation of Multiple-Valued Logic(MVL) based on Current-Mode CMOS Logic(CMCL) circuits has recently been achieved. In this paper, four-valued Unary Multiple-Valued logic functions are synthesized using current-mode CMOS logic circuits. We properly make use of the fact that the CMCL addition of logic values represented using discrete current values can be performed at no cost and that negative logic values are readily available via reversing the direction of current flow. A synthesis process for CMCL circuits is based upon a logically complete set of basic elements. Proposed algorithm results in less expensive realization than those achieved using existing techniques in terms of the number of transistors needed. As an alternative to the cost-table techniques Universal Unary Programmable Circuit (UUPC) for a unary function is also proposed.

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Low Power Current mode Signal Processing for Maritime data Communication (해상 데이터 통신을 위한 저전력 전류모드 신호처리)

  • Kim, Seong-Kweon;Cho, Seung-Il;Cho, Ju-Phil;Yang, Chung-Mo;Cha, Jae-sang
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.8 no.4
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    • pp.89-95
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    • 2008
  • In the maritime communication, Orthogonal Frequency Division Multiplexing (OFDM) communication terminal should be operated with low power consumption, because the communication should be accomplished in the circumstance of disaster. Therefore, Low power FFT processor is required to be designed with current mode signal processing technique than digital signal processing. Current- to-Voltage Converter (IVC) is a device that converts the output current signal of FFT processor into the voltage signal. In order to lessen the power consumption of OFDM terminal, IVC should be designed with low power design technique and IVC should have wide linear region for avoiding distortion of signal voltage. To design of one-chip of the FFT LSI and IVC, IVC should have a small chip size. In this paper, we proposed the new IVC with wide linear region. We confirmed that the proposed IVC operates linearly within 0.85V to 1.4V as a function of current-mode FFT output range of -100~100[uA]. Designed IVC will contribute to realization of low-power maritime data communication using OFDM system.

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Design of Low Power Current Memory Circuit based on Voltage Scaling (Voltage Scaling 기반의 저전력 전류메모리 회로 설계)

  • Yeo, Sung-Dae;Kim, Jong-Un;Cho, Tae-Il;Cho, Seung-Il;Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.2
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    • pp.159-164
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    • 2016
  • A wireless communication system is required to be implemented with the low power circuits because it uses a battery having a limited energy. Therefore, the current mode circuit has been studied because it consumes constant power regardless of the frequency change. However, the clock-feedthrough problem is happened by leak of stored energy in memory operation. In this paper, we suggest the current memory circuit to minimize the clock-feedthrough problem and introduce a technique for ultra low power operation by inducing dynamic voltage scaling. The current memory circuit was designed with BSIM3 model of $0.35{\mu}m$ process and was operated in the near-threshold region. From the simulation result, the clock-feedthrough could be minimized when designing the memory MOS Width of $2{\mu}m$, the switch MOS Width of $0.3{\mu}m$ and dummy MOS Width of $13{\mu}m$ in 1MHz switching operation. The power consumption was calculated with $3.7{\mu}W$ at the supply voltage of 1.2 V, near-threshold voltage.

Current Transfer Structure based Current Memory using Support MOS Capacitor (Support MOS Capacitor를 이용한 Current Transfer 구조의 전류 메모리 회로)

  • Kim, Hyung-Min;Park, So-Youn;Lee, Daniel-Juhun;Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.3
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    • pp.487-494
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    • 2020
  • In this paper, we propose a current memory circuit design that reduces static power consumption and maximizes the advantages of current mode signal processing. The proposed current memory circuit minimizes the problem in which the current transfer error increases as the data transfer time increases due to clock-feedthrough and charge-injection of the existing current memory circuit. The proposed circuit is designed to insert a support MOS capacitor that maximizes the Miller effect in the current transfer structure capable of low-power operation. As a result, it shows the improved current transfer error according to the memory time. From the experimental results of the chip, manufactured with MagnaChip / SK Hynix 0.35 process, it was verified that the current transfer error, according to the memory time, reduced to 5% or less.

Accuracy Enhancement Technique in the Current-Attenuator Circuit (전류 감쇠 조정 회로에서의 정밀도 향상 기술)

  • Kim, Seong-Kweon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.19 no.8
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    • pp.116-121
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    • 2005
  • To realize the tap coefficient of a finite impulse response(FIR) filter or the twiddle factor of a fast Fourier transform(FFT) using a current-mode analog circuit, a high accurate current-attenuator circuit is needed This paper introduces an accuracy enhancement technique in the current-mode signal processing. First of all, the DC of set-current error in a conventional current-attenuator using a gate-ratioed orient mirror circuit is analyzed and then, the current-attenuator circuit with a negligibly small DC offset-current error is introduced. The circuit consists of N-output current mirrors connected in parallel with me another. The output current of the circuit is attenuated to 1/N of the input current. On the basis of the Kirchhoff current law, the current scale ratio is determined simply by the number of the current mirrors in the N-current mirrors connected in parallel. In the proposed current-attenuator circuit the scale accuracy is limited by the ac gain error of the current mirror. Considering that a current mirror has a negligibly small ac gain error, the attainable maximum scale accuracy is theoretically -80[dB] to the input current.

Cell array multiplier in GF(p$^{m}$ ) using Current mode CMOS (전류모드 CMOS를 이용한 GF(P$^{m}$ )상의 셀 배열 승산기)

  • 최재석
    • Journal of the Institute of Convergence Signal Processing
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    • v.2 no.3
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    • pp.102-109
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    • 2001
  • In this paper, a new multiplication algorithm which describes the methods of constructing a multiplierover GF(p$^{m}$ ) was presented. For the multiplication of two elements in the finite field, the multiplication formula was derived. Multiplier structures which can be constructed by this formula were considered as well. For example, both GF(3) multiplication module and GF(3) addition module were realized by current-mode CMOS technology. By using these operation modules the basic cell used in GF(3$^{m}$ ) multiplier was realized and verified by SPICE simulation tool. Proposed multipliers consisted of regular interconnection of simple cells use regular cellular arrays. So they are simply expansible for the multiplication of two elements in the finite field increasing the degree m.

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Performance Improvement of Current-mode Device for Digital Audio Processor (디지털 오디오 프로세서용 전류모드 소자의 성능 개선에 관한 연구)

  • Kim, Seong-Kweon;Cho, Ju-Phil;Cha, Jae-Sang
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.8 no.5
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    • pp.35-41
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    • 2008
  • This paper presents the design method of current-mode signal processing for high speed and low power digital audio signal processing. The digital audio processor requires a digital signal processing such as fast Fourier transform (FFT), which has a problem of large power consumption according to the settled point number and high speed operation. Therefore, a current-mode signal processing with a switched Current (SI) circuit was employed to the digital audio signal processing because a limited battery life should be considered for a low power operation. However, current memory that construct a SI circuit has a problem called clock-feedthrough. In this paper, we examine the connection of dummy MOS that is the common solution of clock-feedthrough and are willing to calculate the relation of width between dummy MOS for a proposal of the design methodology for improvement of current memory. As a result of simulation, in case of that the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the relation of width between switch MOS and dummy MOS is $W_{M4}=1.95W_{M3}+1.2$ for the width of switch MOS is 2~5um, it is $W_{M4}=0.92W_{M3}+6.3$ for the width of switch MOS is 5~10um. Then the defined relation of MOS transistors can be a useful design guidance for a high speed low power digital audio processor.

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