• Journal of the Korean Chemical Society
• /
• v.32 no.3
• /
• pp.186-194
• /
• 1988

The electrochemical reduction of O,O-dimethyl-O-(3-methyl-4-nitrophenyl)-phosphorothioate (Fenitrothion) has been studied in acetonitrile solution containing surfactant micelle by direct current (DC)-differential pulse (DP) polarography, cyclic voltammetry (CV) and controlled potential coulometry (CPC). The partially reversible electron transfer-chemical reaction(EC, EC mechanism) of fenitrothion reduction proceeded by four electron transfer to form O,O-dimethyl-O-(3-methyl-4-hydroxyaminophenyl)-phosphorothioate which undergoes single bond of the phosphorus atom and phenoxy group cleaves to give p-amino-m-cresol and dimethyl thiophosphinic acid as major product by two electron transfer-protonation at higher negative potential. The polarograpic reduction waves shown to suppressed due to inhibitory effect of sodium lauryl sulfate micelle solution and split up on selectivity of anionic micelle effect in two step at the first reduction peak.

• Journal of the Korean Chemical Society
• /
• v.33 no.6
• /
• pp.633-643
• /
• 1989

The R$Rh_2(ap)_4$(2,2-trans) isomer (ap = 2-anilinopyridinate), which has two anilino nitrogens and two pyridyl nitrogens bound to each rhodium ion trans to their own kind, shows activation towards the one electron reduction of dioxygen at -0.40 V vs SCE. The ESR spectrum taken at 123 K proves the formation of a $[Rh_2(ap)_4(O_2)]$ ion with oxygen axially bound to one rhodium ion and the complex is at a RhⅡ2 oxidation state. The complex will form [$Rh_2(ap)_4(O_2)(CH_3CN)]^-$ in presence of $CH_3CN/CH_2Cl_2$ mixture without breaking the Rh-$O_2^-$ bond. When oxidized at -0.25 and 0.55 V, $[Rh_2(ap)_4(O_2)]$ will undergo two one electron oxidations to form $Rh_2(ap)_4(O_2)[Rh_2(ap)_4(O_2)]^+$. Both species have an axially bound superoxide ion but the former is at $Rh^{II}Rh^{III }$and the later at $Rh^{III}_2$ oxidation states. The ESR spetra and $CH_3CN$ addition study, on the other hand, show that the later complex is better described as $[Rh_{II}Rh^{III}(ap)_4(O_2)]^+$ with the odd electron localized on rhodium ion and the complex has an axially coordinated molecular oxygen. The electrochemical and ESR studies also show that the degree of dioxygen activation is a function of electrochemical redox potential.

• The Journal of the Petrological Society of Korea
• /
• v.25 no.4
• /
• pp.389-400
• /
• 2016

The study area, which is located in the southeastern part of the Jirisan province of the Yeongnam massif, Korea, consists mainly of the Precambrian Sancheong anorthosite complex and the Jirisan metamorphic rock complex, the Mesozoic granitoids which intruded them. Several fracture sets with various geometric indicators, which determine their relative timing and shear sense, are well observed in the Sancheong anorthosite complex. The aim of this study is to determine the development sequence of extension fractures, the movement sense and development sequence of shear fractures in the Sancheong anorthosite complex on the basis of detailed analysis of their geometric indicators. This study suggests fracture system of the Sancheong anorthosite complex was formed at least through five different fracturing events, named as Dn to Post-Dn+3 phases. (1) Dn phase: extension fracturing event of NNW trend. The fracture set experienced the reactivations of dextral ${\rightarrow}$ sinistral shearing with the change of stress field afterward. (2) Dn+1 phase: extension fracturing event of (N)NE trend. The fracture set experienced the reactivations of sinistral ${\rightarrow}$ sinistral ${\rightarrow}$ dextral. (3) Dn+2 phase: extension fracturing event of NW trend. The fracture set experienced the activated of dextral shearing. (4) Dn+3 phase: extension fracturing event of N-S trend. (5) Post-Dn+3 phase: extension fracturing event of (E)NE trend. Dn deformation formed during the early Songnim orogeny. Dn+1 deformation formed during the late Songnim orogeny. Dn+2 deformation formed during the Daebo orogeny. Dn+3 deformation formed during the Bulguksa orogeny.

• The Journal of the Petrological Society of Korea
• /
• v.27 no.3
• /
• pp.139-151
• /
• 2018

The Songgang-ri area, Cheongsong-gun, which is located in the Sobaeksan province of Yeongnam Massif near the southwestern boundary of Yeongyang subbasin of Gyeongsang Basin, consists of age unknown metamorphic rocks (banded gneiss, granitic gneiss, limesilicates) and age unknown igneous rock (granite gneiss) which intrudes them. This paper researched the geological structures of the Songgang-ri area from the geometric and kinematic features and the developing sequence of multi-deformed rock structures in the geological outcrops exposed about 170 m along the riverside of Yongjeoncheon in the eastern part of Songgang village, Songgang-ri. In the Songgang-ri geological outcrops are recognized three times (Fn, Fn+1, Fn+2) of folding, three times (Dk-I, Dk-II, Dk-III) intrusion of acidic dykes, one time of faulting, which are different in deformation and intrusion timing each other. These geological structures are at least formed by five times (Dn, Dn+1, Dn+2, Dn+3, Dn+4) of deformation. The Dn deformation is recognized by Fn fold which axial surface is parallel to the regional foliation. The Dn+1 intruded the (E)NE trending Dk-I dyke in the earlier phase and formed the NW trending Fn+1 fold in the later phase under compression of (E)NE-(W)SW direction. There are tight, isoclinal, intrafolial folds, boudinage, ${\sigma}$- or ${\delta}$-type boudins, asymmetric fold, C' shear band as the major deformed rock structures. The Dn+2 intruded the (N)NW trending Dk-II dyke in the earlier phase and formed NE trending Fn+2 fold in the later phase under compression of (N)NW-(S)SE direction. There are open fold and folded boudinage as those. The Dn+2 intruded the Dk-III dyke which cuts the Dk-I and Dk-II dykes and the axial surface of Fn+2 fold. The Dn+3 formed the left-handed reverse oblique-slip fault of NNE trend in which hanging wall moves into the SSE direction. Considering in that such five times of deformation recognized in the Songgang-ri geological outcrops are closely connected to the distribution and geological structure of the constituents in the more regional area as well as Songgang-ri area, the research result is expected to play a great data in clarifying and understanding the geological structure and its development process of the surrounding and boundary constituents of the Yeongnam Massif and Gyeongsang Basin.

• Journal of the Korean Chemical Society
• /
• v.37 no.8
• /
• pp.711-716
• /
• 1993

The mechanism for electrochemical oxidation of natural alkaloid, ${\iota}$-sparteine (SP) was studied in acetonitrile solvent. The cyclic voltammogram of SP shows two irreversible anodic peaks at +0.75 V and +1.45 V vs. Ag/AgCl (0.1M AgNO$_2$ in acetonitrile) electrode. Coulometry reveals that the number of electrons involved in each oxidation peaks is in the range of 1.2∼1.3 respectively. Neutral imine radical was produced by fast deprotonation of SP radical cation formed by oxidation of one nitrogen atom in SP. Two pathways are possible for the reaction of the neutral radical: Due to the disproportionation of the radical, SP and enamine were mainly produced. Also, the 1,2-dehydrosparteinium cation was formed as minor product through the second one electron transfer oxidation of this radical. The (+)-lupanine was produced by treatment of sparteinium cation with potassium hydroxide. We have isolated and confirmed the electrolysis products using IR, GC-MS, UV-Vis, and thin-layer spectroelectrochemical method.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.39 no.1
• /
• pp.31-36
• /
• 2002

Low energy boron ions were implanted into the preamorphized and crystalline silicon substrates to form 0.2${\mu}m$ $p^+-n$ junctions. The rapid thermal annealing(RTA) was used to annihilate the crystal defects due to implantation and to activate the implanted boron ions, and the furnace annealing was employed to reflow the BPSG(bolo-phosphosilicate glass). The implantation conditions for Gepreamorphization were the energy of 45keV and the dose of 3$\times$1014cm-2. BF2 ions employed as a p-type dopant were implanted with the energy of 20keV and the dose of 2$\times$1015cm-2. The thermal conditions of RTA and furnace annealing were $1000^{\circ}C$/10sec and $850^{\circ}C$/40min, respectively. The junction depths were measured by SIMS and ASR techniques, and the 4-point probe was used to measure the sheet resistances. The electrical characteristics were analyzed via the leakage currents of the fabricated diodes. The single thermal processing with RTA produced shallow junctions of good qualities, and the thermal treatment sequence of furnace anneal and RTA yielded better junction characteristics than that of RTA and furnace anneal.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.12
• /
• pp.55-67
• /
• 2010

The electrical properties of a back drilled via-hole (BDH) without the open-stub and the plated through via-hole (PTH) with the open-stub, which is called the conventional structure, in a high-count multi~layered (HCML) printed circuit board (PCB) were investigated for a high-speed digital system, and a selected inner layer to transmit a high-speed signal was farthest away from the side to mount the component. Within 10 GHz of the broadband frequency, a design of experiment (DOE) methodology was carried out with three cause factors of each via-hole structure, which were the distance between the via-holes, the dimensions of drilling pad and the anti-pad in the ground plane, and then the relation between cause and result factors which were the maximum return loss, the half-power frequency, and the minimum insertion loss was analyzed. Subsequently, the empirical formulae resulting in a macro model were extracted and compared with the experiment results. Even, out of the cause range, the calculated results obtained from the macro model can be also matched with the measured results within 5 % of the error.

• Journal of the Korean Chemical Society
• /
• v.39 no.6
• /
• pp.440-445
• /
• 1995

The chemical compositions and stability constants, thermodynamic parameters for the neodymium(Ⅲ) complexes of substituted benzo-1,4,7,10,13-pentaoxacyclopentadecane(B15C5) have been determined by spectrophotometry and conductometry in methanol solution at various temperatures. As substituents, CH3, Br, CHO, NO2, and 3,4-(NO2)2 were used. In methanol solution the ratios of neodymium(Ⅲ) to the ligands in the complexes are 1 : 1. The stability constants were increased in order of B15C5-3,4-(NO2)2 < B15C5-NO2 < B15C5-CHO < B15C5-Br < B15C5 < B15C5-CH3. This observation can be explained in terms of the substituent effect. The order of stability constants was dimethylsulfoxide < acetone < acetonitrile in solution and the magnitudes were found to be inversely proportional to the solvents donicities. These results could be understood in terms of solvent basicity, ligand basicity, solvation of the cation, and entropy changes of complex formation.

• Journal of the Korean Chemical Society
• /
• v.59 no.4
• /
• pp.271-279
• /
• 2015

The critical micelle concentration (CMC), the counter ion binding constant (B) and the aggregation number (N^* ) for the mixed micellization of sodium dodecanoate and sodium n-octanoate as two anionic surfactants have been investigated by means of electric conductivity and light scattering. As its experimental results are found to be deviated from ideal mixed model, thus two different kinds of regular solution models such as Rubingh and Motomura are used for interpreting our experimental data. The stability of the mixed micelles has been confirmed from the negative values of the standard Gibbs energy of mixed micellization ΔG^micel,0 over all compositions and the measured values of ΔG^micel,0 agreed with the theoretical ones within the experimental error.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.52 no.11
• /
• pp.29-35
• /
• 2015

The photo-response characteristics of polysilicon based metal-semiconductor-metal (MSM) photodetector structure, depending on deuterium treatment method, was analyzed by means of the dark-current and the light-current measurements. Al/Ti bilayer was used as a Schottky metal. Our purpose is to incorporate the deuterium atoms into the absorption layer of undoped polysilicon, effectively, for the defect passivation. We have introduced two deuterium treatment methods, a furnace annealing and an ion implantation. In deuterium furnace annealing, deuterium bond was distributed around polysilicon surface where the light current flows. As for the ion implantation, even thought it was a convenient method to locate the deuterium inside the polysilicon film, it creates some damages around polysilicon surface. This deteriorated the photo-response in our photodetector structure.