• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.270-277
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• 2000

A new Lateral Trench-MOS Bipolar-Mode Field-Effect Transistor(LTMBMFET) is proposed and verified by MEDICI simulation. By using a trench MOS structure, the proposed device can enhance the current gain without sacrificing other device characteristics such as the breakdown voltage. The channel region of the proposed device is formed between the trench MOS structure. So the effect of the substrate voltage is negligible when compared with the conventional device which has a channel region between the gate junction and the buried oxide layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.698-703
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• 2015

In this study, we fabricated the dual gate (DG) ion-sensitive field-effect-transistor (ISFET) with flexible polyimide (PI) extended gate (EG). The DG ISFETs significantly enhanced the sensitivity of pH in electrolytes from 60 mV/pH to 1152.17 mV/pH and effectively improved the drift and hysteresis phenomenon. This is attributed to the capacitive coupling effect between top gate and bottom gate insulators of the channel in silicon-on-transistor (SOI) metal-oxide-semiconductor (MOS) FETs. Accordingly, it is expected that the PI-EG based DG-ISFETs is promising technology for high-performance flexible biosensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.303-304
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.47-52
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• 2007

Organic field-effect transistors (OFETS) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with varying channel length. The CuPc FET device was made a top-contact type and the channel length was a $100\;{\mu}m,\;50\;{\mu}m,\;40\;{\mu}m,\;and\;30\;{\mu}m$ and the channel width was a fixed at 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with varying channel length (L) and we calculated the effective mobility. Also, we measured a capacitance-voltage (C-V) by applied bias voltage with varying frequency at 43, 100, 1000 Hz.

• 전기의세계
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• v.14 no.6
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• pp.1-7
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• 1965

This paper provides the analysis of the differential amplifier using the insulated gate, metala-oxide-semiconductor type field-effect-transistor(MOS FET), for its active element and the power drift of the amplifer. From these analytical considerations some design standardsn were found for the MOS FET differential amplifier available for the measurement of the very small current (pico-ampare range). A differential amplifier was designed and built in the view of above considerations. Its equivalent input gate voltages of the thermal drift and the power drift were 0.57mV/.deg. C in the range 25.deg. C-60.deg. C and 8.8mV/V in the range of 20% drift of its orginal value, respectively.

• Electronics and Telecommunications Trends
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• v.20 no.5 s.95
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• pp.56-69
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• 2005

유기물이 반도체 성질을 가질 수 있다는 것이 밝혀지면서 많은 여러 가지 응용분야에 많은 연구가 진행되어 왔다. 유기 반도체는 무기 반도체와 다르게 적절한 용매에 녹는다는 장점이 있다. 이 장점을 활용해 소자 제작에 직접 인쇄법인 그래픽 인쇄 방식을 사용할 수 있다. 본 기고문에서는 유기 반도체의 여러 응용 분야 중 직접 인쇄법으로 제작한 유기 전계효과 트랜지스터(OTFT)를 중심으로 기술 발전 방향과 연구 동향, 대표적 벤처 기업 등에 관하여 기술하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.410-411
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.87-91
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• 2013

Carbon-nanotube field-effect transistors (CNFETs) have drawn wide attention as one of the potential substitutes for metal-oxide-semiconductor field-effect transistors (MOSFETs) in the sub-10-nm era. Output characteristics of coaxially gated CNFETs were simulated using FETToy simulator to reveal the dependence of drain current on the nanotube diameter and gate oxide thickness. Nanotube diameter and gate oxide thickness employed in the simulation were 1.5, 3, and 6 nm. Simulation results show that drain current becomes large as the diameter of nanotube increases or insulator thickness decreases, and nanotube diameter affects the drain current more than the insulator thickness. An equation relating drain saturation current with nanotube diameter and insulator thickness is also proposed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.1 s.244
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• pp.41-47
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• 2006

High resolution dopant profiling in semiconductor devices has been an intense research topic because of its practical importance in semiconductor industry. Although several techniques have already been developed. it still requires very expensive tools to achieve nanometer scale resolution. In this study we demonstrated a novel dopant profiling technique with nanometer resolution using very simple setup. The newly developed technique measures the thermoelectric voltage generated in the contact point of the SPM probe tip and MOSFET surface instead of electrical signals widely adopted in previous techniques like Scanning Capacitance Microscopy. The spatial resolution of our measurement technique is limited by the size of contact size between SPM probe tip and MOSFET surface and is estimated to be about 10 nm in this experiment.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.77-83
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• 1994

In this paper we numerically approximated the field-effect mobility of a-Si:H TFT. Field-effect mobility, based on the charge-trapping model and new effective capacitance model in our study, used Chebyshev approximation was approximated as the function of gate potential(gate-to-channel voltage). Even though various external factors are changed, this formula can be applied by choosing the characteristic coefficients without any change of the approximation formula corresponding to each operation region. Using new approximated field-effect mobility formula, the dependences of field-effect mobility on materials and thickness of gate insulator, thickness of a-Si bulk, and operation temperature in inverted staggered-electrode a-Si:H TFT were estimated. By this was the usefulness of new approximated mobility formula proved.