• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1521-1522
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• 2011

뇌임펄스에 의한 절연유체 내 절연파괴 현상은 스트리머 채널에서의 유체유동과 기체유동이 동시에 발생한다. 스트리머 개시와 동시에 발생하는 기포들은 절연파괴에 직접적인 영향을 미치며 이를 모의해석하기위해서 2상유동이 고려되어야한다. 2상유동이 고려된 뇌임펄스 응답 유한요소해석은 전계에 의한 푸아송 방정식과 전자, 양이온, 음이온에 대한 전하연속방정식으로 구성되며 전계 방출과 열전자 방출효과를 경계조건으로 부여하였다. 기체 전리현상은 타운젠트 이론을 도입하였으며, 유체 전리현상은 제너 이온화 모델을 도입하여 수학적 모델링을 통한 2상유동으로 결합하였다. IEC standard #60897의 표준규격에 따라 침-구형 전극을 설계하였고 2차원 축대칭 간략화모델에 적용하여 실험적 결과와 비교분석함으로써 신뢰할 수 있는 수치해석기법이 제시되었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.1
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• pp.314-319
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• 2010

This paper represents the results of study on Extra High Voltage Power Cable Connection System Development. The purpose is to evaluate structural safety by numerical analysis for the relaxation of electric field concentration and by structural analysis of Carrier Pipe for easy installation of High Insulating Rubber Sleeve in the field, which is core technique of connection system. According to the results, the thickness of Carrier Pipe needs at least 9mm by optimization analysis of deformation behavior and insulating design & relaxation of electric field concentration. The result of contraction behavior of the connection part can be demonstrated with the same result of electric field relaxation analysis at the boundary of the electrode inserted into the insulating rubber sleeve.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.12
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• pp.1513-1519
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• 2013

A genetic algorithm (GA) is an optimization technique based on natural evolution theory to find the global optimal solution. Unlike the gradient-based method, it can design nanoscale structures in the electric field because it does not require sensitivity calculation. This research intends to design a nanoaperture with an unprecedented shape by the topology optimization scheme based on the GA and ON/OFF method in the visible frequency range. This research mainly aims to maximize the transmission rate at a measuring area located 10nm under the exit plane and to minimize the electric distribution at other locations. The finite element analysis (FEA) and optimization process are performed by using the commercial package COMSOL combined with the Matlab programming. The final results of the optimized model are analyzed by a comparison of the electric field intensity and the spot size of near field with those of the initial model.

• Journal of the Korea Society of Computer and Information
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• v.26 no.2
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• pp.53-60
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• 2021

In this paper, we aimed to identify the insulation characteristics and reliability of Epoxy composites, which are widely used as insulation material for electrical & electronic components and electric appliance. To this end, it was necessary to predict variations of electric field due to the distribution of fillers that must be added by economic and mechanical factors. So, we verified the result using an electric field analysis Simulator. Furthermore, under the condtion of DC voltage application, an dielectirc breakdown test was performed according to ambient temperature changes and the distribution of fillers, and the changes were observed. Three types of specimens were manufactured by adding 0, 50 and 100[phr] filling to Epoxy resin. In all specimens, as temperature was increased, the strength of the dielectric strength was decreased. When comparing the simulation results with the actual dielectric breakdown test results, we was able to confirm the technical applicability required for Insulation design of electric appliance.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.840_841
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• 2009

본 논문은 2차원 유한요소법을 이용하여 2[MVA]급 몰드변압기의 과도전계를 해석한 것이다. 과도현상을 해석하기 위해 변압기 코일 및 대지 간 정전용량을 에너지법을 이용하여 구하였고, 이를 이용하여 변압기에 충격전압 95[kV]가 인가될 경우에 변압기 위치별 전계의 세기를 구하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.12-17
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• 2002

In this paper, an effective ionization coefficient for 4H-SiC is extracted in the form of c .E$^{m}$ from ionization coefficients of electron and hole. Analytical expressions for critical electric field and breakdown voltage of 4H-SiC p$^{+}$n junction are derived by employing the effective ionization coefficient. The analytic results agree well with the experimental ones reported within 10% in error for the doping concentration in the range of 10$^{15}$ cm$^{-3}$ ~10$^{18}$ cm$^{-3}$ . .

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.331-332
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• 2008

최근 엘리노 현상과 기상이변(태풍 및 폭설)으로 갤로핑 및 전선도약(Sleet jump) 등에 따른 송전선로 상간단락 고장의 우려가 날로 증가하고 있다. 특히 345kV급 간선계통의 상간단락 고장은 순간전압 강화 등 전기품질 저하로 이어질 수 있다. 이에 본 논문에서는 345kV 2도체용 폴리머 상간스페이서를 개발하여 상간단락고장에 대한 근본적인 예방책을 제시하였다. 폴리머용 345kV 절연 설계, 고강도 FRP ROD 설계 및 턴버클을 이용한 미세조정 장치 적용, 코로나 방지를 위한 코로나 링 채용 등을 통하여 최적의 345kV 2도체용 상간스페이서를 고안하였다. 또한 상간스페이서 소재의 성능 평가 및 해석을 위하여 Maxwell 2D Field Simulator를 이용하여 모델링하였으며 갓 형상에 따른 전계분포 해석과 FRP와 고무 계면에서의 전계분포 해석도 수행하였다.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1124-1125
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• 2015

밴드-갭이 큰 반도체는 실리콘에 비하여 다양한 전기 물성 장점을 가져 고주파수 증폭 소자나 차세대 전력 반도체 소자로 각광을 받고 있다. 다양한 와이드 밴드-갭 반도체 중 AlGaN/GaN 이종접합 반도체는 채널의 높은 전도성과 높은 임계 전계로 인하여 우수한 전기적 특성을 가진다. 최근 발전된 수치해석 시뮬레이션을 이용하여 AlGaN/GaN 고전자 이동도 트랜지스터 (high-electron-mobility transistor, HEMT)의 설계연구를 진행하였다. AlGaN 장벽층의 두께가 증가할수록 채널의 전자 면 농도가 증가하도록 설계하였다. 또한 게이트 필드 플레이트 설계를 통하여 AlGaN/GaN HEMT의 역방향 전계 피크를 1개에서 2개로 증가시켜 항복전압을 368 V에서 최대 822 V로 개선하였다. 수렴문제를 개선한 수치해석 시뮬레이션은 RF power AlGaN/GaN HEMT의 설계에 유용하다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.3
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• pp.563-569
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• 2004

The formulas taking into account the fundamental features of a meteoric radio propagation are obtained. Numerical simulation analysis has shown complex space structure of a field. Time behavior of intensity are researched taking into account nonstationary model. It is shown, this behavior essentially depends on parameters of a meteor trail, and that there is large variety of time dependencies of the signal intensity at the single scattering. In particular, at appropriate parameters of a meteor underdense trail it is possible large duration meteor bursts with which usually refer to an overdense meteor propagation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.2
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• pp.168-174
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• 2006

We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that can be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, thermal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source.