Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Analytical Breakdown Voltage for 4H-SiC ${p^+}$ Junction

4H-SiC ${p^+}$접합의 해석적 항복 전압

  • 정용성 (서라벌대학, 컴퓨터정보학부)
  • Published : 2002.01.01
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Abstract

In this paper, an effective ionization coefficient for 4H-SiC is extracted in the form of c .E$^{m}$ from ionization coefficients of electron and hole. Analytical expressions for critical electric field and breakdown voltage of 4H-SiC p$^{+}$n junction are derived by employing the effective ionization coefficient. The analytic results agree well with the experimental ones reported within 10% in error for the doping concentration in the range of 10$^{15}$ cm$^{-3}$ ~10$^{18}$ cm$^{-3}$ . .

본 논문에서는 전자와 정공의 이온화 계수로부터 4H-SiC를 위한 유효 이온화 계수를 cㆍE/sup m/의 형태로 추출하였고, 이 유효 이온화 계수를 이용하여 4H-SiC p/sup +/n 접합에서의 항복시 임계 전계와 항복 전압을 위한 해석적 표현식을 유도하였다. 해석적 항복 전압 및 항복 전계 결과는 10/sup 15/㎝/sup -3/∼10/sup 18/㎝/sup -3/의 농도 범위에서 실험 결과와 비교하여 오차 범위 10% 이내로 잘 일치하였다.

Keywords

References

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