• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.6
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• pp.587-591
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• 2005

Driving Waveform of AC PDP in reset periode is increased and decreased with constant slope to improve dark room contrast ratio and image quality. But the slope and magnitude of ramp waveform are related to strong and weak discharge with temperature change in AC PDP. So this paper proposes a methods of changing the slope and magnitude of ramp waveform during reset periode according to temperature change in AC PDP. Experimental variable factors ire chosen to setup slope, setdown slope, and -Vy voltage magnitude in Y sustain electrode. The proposed methods are expected to compensate for effect of the temperature change, causing misfiring in high and low temprature, with varing the slope and magnitude of ramp voltage during reset period and improve image quality.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.2
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• pp.215-223
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• 2005

Non-thermal plasma decomposition of gas-phase styrene was investigated in this study using three different types of plasma reactors; dielectric-barrier discharge (DBD) reactor, surface discharge (SD) reactor and plasma-driven catalyst (PDC) reactor packed with 2.0 wt% $Ag/TiO_2$ catalysts. The main parameters used for the comparative assessment of the plasma reactors include the decomposition efficiency, carbon balance, byproduct distribution, COx ($CO+CO_2$) selectivity and COx yield. The SD and the DBD reactors showed better conversion efficiency of styrene than that of the PDC reactor due to their larger capability in ozone formation. On the other hand, the PDC reactor showed better carbon balance, the yield and the selectivity of COx. The required specific input energies to achieve 100% carbon balance from the decomposition of 100 ppmv styrene using the plasma alone reactors and the PDC reactor were 420 J/L and 110 J/L, respectively. The major decomposition products in gas-phase were CO, $CO_2$ and HCOOH regardless of the types of plasma reactors. In the case of SD and DBD reactors, the $CO_2$ selectivity ranged in $39.5{\sim}60%$. The $CO_2$ selectivity in the PDC reactor was in range of $68.5{\sim}75.5%$.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.5
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• pp.345-352
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• 2016

As aircrafts are being operated at high altitude, wing structures experience various fatigue loadings under cryogenic environments. As a result, fatigue damage such as a crack could be develop that could eventually lead to a catastrophic failure. For this reason, fatigue damage monitoring is an important process to ensure efficient maintenance and safety of structures. To implement damage detection in real-world flight environments, a special cooling chamber was built. Inside the chamber, the temperature was maintained at the cryogenic temperature, and harmonic fatigue loading was given to a wing structure. In this study, piezoelectric active-sensing based guided waves were used to detect the fatigue damage. In particular, a beamforming technique was applied to efficiently measure the scattering wave caused by the fatigue damage. The system was used for detection, growth monitoring, and localization of a fatigue crack. In addition, a sensor diagnostic process was also applied to ensure the proper operation of piezoelectric sensors. Several experiments were implemented and the results of the experiments demonstrated that this process could efficiently detect damage in such an extreme environment.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.91-96
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• 2020

The 33-mode dielectric and piezoelectric properties of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 piezoelectric single crystals were measured under large electric field and compressive stress. The phase transition from the low temperature rhombohedral to the high temperature tetragonal structure was observed in the range of 110~140℃, and the Curie temperature changing to the cubic structure was about 165℃. The polarization change according to the compressive stress and electric field was measured. Relative dielectric constant was calculated from the slope of the polarization curve applied to the electric field, and the calculated relative dielectric constant increased as the applied stress increased, and the relative dielectric constant decreased as the applied electric field increased. The strain according to the compressive stress and electric field change was measured, the piezoelectric constant was calculated from the slope of the curve, and the phase transition according to the application of pressure was confirmed. In the case of practical application as an underwater or medical ultrasonic actuator, it is necessary to properly design the magnitude of the compressive stress applied to the device and the DC bias in order to maintain linear driving.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.263-263
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• 2016

최근 반도체 시장에서는 저비용으로 고성능 박막 트랜지스터(TFT)를 제작하기 위한 다양한 기술들이 연구되고 있다. 먼저, 재료적인 측면에서는 비정질 상태에서도 높은 이동도와 가시광선 영역에서 투명한 특성을 가지는 산화물 반도체가 기존의 비정질 실리콘이나 저온 폴리실리콘을 대체하여 차세대 디스플레이의 구동소자용 재료로 많은 주목받고 있다. 또한, 공정적인 측면에서는 기존의 진공장비를 이용하는 PVD나 CVD가 아닌 대기압 상태에서 이루어지는 용액 공정이 저비용 및 대면적화에 유리하고 프리커서의 제조와 박막의 증착이 간단하다는 장점을 가지기 때문에 활발한 연구가 이루어지고 있다. 특히 산화물 반도체 중에서도 indium-gallium-zinc oxide (IGZO)는 비교적 뛰어난 이동도와 안정성을 나타내기 때문에 많은 연구가 진행되고 있지만, 산화물 반도체 기반의 박막 트랜지스터가 가지는 문제점 중의 하나인 문턱전압의 불안정성으로 인하여 상용화에 어려움을 겪고 있다. 따라서, 본 연구에서는 기존의 산화물 반도체의 불안정한 문턱전압의 문제점을 해결하기 위해 마이크로웨이브 열처리를 적용하였다. 또한, 기존의 IGZO에서 suppressor 역할을 하는 값비싼 갈륨(Ga) 대신, 저렴한 지르코늄(Zr)과 하프늄(Hf)을 각각 적용시켜 용액 공정 기반의 Zr-In-Zn-O (ZIZO) 및 Hf-In-Zn-O (HIZO) TFT를 제작하여 시간에 따른 문턱 전압의 변화를 비교 및 분석하였다. TFT 소자는 p-Si 위에 습식산화를 통하여 100 nm 두께의 $SiO_2$가 열적으로 성장된 기판 위에 제작되었다. 표준 RCA 세정을 진행하여 표면의 오염 및 자연 산화막을 제거한 후, Ga, Zr, Hf 각각 suppressor로 사용한 IGZO, ZIZO, HIZO 프리커서를 이용하여 박막을 형성시켰다. 그 후 소스/드레인 전극 형성을 위해 e-beam evaporator를 이용하여 Ti/Al을 5/120 nm의 두께로 증착하였다. 마지막으로, 후속 열처리로써 마이크로웨이브와 퍼니스 열처리를 진행하였다. 그 결과, 기존의 퍼니스 열처리와 비교하여 마이크로웨이브 열처리된 IGZO, ZIZO 및 HIZO 박막 트랜지스터는 모두 뛰어난 안정성을 나타냄을 확인하였다. 결론적으로, 본 연구에서 제안된 마이크로웨이브 열처리된 용액공정 기반의 ZIZO와 HIZO 박막 트랜지스터는 추후 디스플레이 산업에서 IGZO 박막 트랜지스터를 대체할 수 있는 저비용 고성능 트랜지스터로 적용될 것으로 기대된다.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.48-55
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• 2016

Ambient-light sensor system, which changes the brightness of a display as ambient light change, was studied to reduce the power consumption of the mobile applications such as note PC, tablet PC and smart phone. The ambient-light sensor system should be integrated on a display panel to improve the complexity and cost of mobile applications, so the ambient-light sensor and readout circuit was integrated on a display panel using low-temperature poly-silicon thin film transistors (LTPS-TFT). We proposed the new compensation method to correct the panel-to-panel variation of the ambient-light sensors, without additional equipment. We designed and investigated the new readout circuit with the proposed compensation method and the analog-to-digital converter for the final digital output of ambient light. The readout circuit has very simple structure and control timing to be integrated with LTPS-TFT, and the input luminance ranges from 10 to 10,000 lux. The readout rate is 100 Hz, and maximum differential non-uniformity with 20 levels of the final output below 0.5 LSB.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.1
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• pp.3-9
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• 2009

Although Active matrix organic light emitting diode (AMOLED) display has a better image quality in terms of viewing angle, contrast ratio, and response time than liquid crystal displays (LCDs), it still has some critical issues such as lifetime, residual images, and brightness non-uniformity due to non-uniformity in electrical characteristics of driving TFTs and IR drops on supplied power line. Among them, we improved irrecoverable residual images of AMOLED displays which is mainly related to the hysteresis characteristics of driving TFTs. We consider four kinds of surface treatment conditions before gate oxide deposition for improving hysteresis characteristics. We can reduce the hysteresis level of p-channel TFT to 0.23 V, interface trap states between the poly-Si layer and gate insulator to $3.11{\times}10^{11}cm^{-2}$, and output current variation of p-channel TFT to 3.65 % through the surface treatment using ultraviolet light and H2 plasma. Therefore, the recoverable residual image problem of AMOLED displays can be improved by surface treatment using ultraviolet light and $H_2$ plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.98.1-98.1
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• 2015

G-M극저온냉동기의 구동으로 인해 발생되는 크라이오 펌프의 진동 저감을 위해 각 요소에 해당하는 부품의 소재 및 모델 변경으로 설계에 반영하고자 한다. G-M극저온냉동기는 헬륨냉매를 사용하여 2개의 정압과정과 2개의 정적과정으로 구성되는 냉동사이클을 구성하는데, 구조적 특성상 내부 왕복기의 운동과 고저압변환에 따른 압력차이가 냉동기의 진동을 유발하므로 진공성능에 영향을 줄 수 있으므로, 이를 최소화하는 기술 개발이 필요하다. 헬륨냉매의 고압 유동에 따른 관로 압력증가로 인한 유동소음이 발생하는데, 이로 인한 소음을 줄이기 위해 관로의 최적화 설계/방진구조반영(DAMPER)으로 진동 안정화(Vibration Stabilization)설계를 수행 하고자 하며, 이에 따른 최적화 연구을 수행하고자 한다. 일차적으로, 기존 시스템의 진동측정을 통해 진동의 가진원을 밝히고 진동 전달경로를 파악하고자한다. 진동 가진원의 가진 최소화, 진동전달경로의 전달률 최소화, 고압유동에 따른 관로 설계 최적화를 진동해석, 탄성체 동역학해석, 그리고 유동해석을 통해 진동 및 소음의 최소화 방안을 도출하고자 한다. 해석결과를 토대로 진동가진원의 최소화를 위한 제품설계변경과 진동전달경로에 대한 방진을 위한 dmper 적용(전달률 최소화) 및 유동소음 최소화를 위한 damper나 관로 최적화 설계를 수행한다. 상기 기존시스템 측정/분석, CAE해석을 통한 진동/소음의 최적화방안도출 및 실제품 적용기술은 저진동 크라이오펌프 개발을 위한 기반 기술 확립에 크게 기여할것이며, 향후 크라이오펌프 고도화 및 최신 기술 제품 개발에 큰 기여가 기대된다.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2006.05a
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• pp.347-350
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• 2006

The rocket grade hydrogen peroxide has been widely used as a monopropellant in propulsion systems. In the present paper, we described an experimental study of a catalytic reactor that employs two stage catalyst beds to enhance the low temperature performance of the reactor. $K_2MnO_4$ was chosen as the catalyst for the initial stage of the reactor bed for its superior behavior in the low temperature regime. LSC was used for the catalyst of the second stage of the reactor. The gas generator with combined catalyst beds was built and tested to exhibit high decomposition efficiency over 90% and successful cold-start characteristics.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.171-177
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• 2002

In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.