• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.126-126
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• 2004

1996년 Chou 등이 개발한 가열방식의 나노임프린트 리소그래피(nanoimprint lithography, NIL)은 선폭 100nm 이하의 나노구조물을 경제적으로 제작할 수 있는 대표적인 나노패턴닝(nano-patterning) 공정으로 많은 기대가 모아지고 있으나, 열변형에 의해 다층정렬이 어렵다는 점과, 점도가 큰 레지스트(resist)를 임프린트하기 위해서는 고압(∼30 bar)이 필요하다 점 등의 문제점이 있다. 이를 해결할 수 있는 방법으로 UV 나노임프린트 리소그래피(ultraviolet nanoimprint lithography, UV-NIL)를 들 수 있다.(중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.460-460
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• 2010

단결정 수정은 높은 자외선(UV) 투과성, 화학정 내성, 압전성 등의 특성을 가지고 있으며, 이로 인해 UV 나노임프린트 리소그래피의 스탬프, 광학 리소그래피의 마스크, MEMS 능동소자 등의 다양한 분야에 응용되고 있다. 단결정 수정의 응용분야를 넓히기 위해서 수정과 수정을 접합하는 것은 매우 유용하다. 수정과 수정의 접합은 무결정 유리, 금속등의 중간층을 이용한 접합이 소개되었으나, 접합 시 접합 계면의 평평도가 낮아 지거나, 중간 금속층의 내화학성이 낮은 단점이 있다[1,2]. 이를 극복하기 위해 중간층을 사용하지 않고, 습식 화학적 에칭을 통한 수정-수정의 직접 접합 방법이 소개되었다[3]. 이 방법은 UV 투과성과 내화학성이 높은 접합을 형성할 수 있으나 500도씨 이상의 고온의 어닐링이 필요한 단점이 있다. 본 연구에서는 플라즈마를 이용하여 저온(200도씨)에서 수정-수정의 직접 접합을 형성하였다. 플라즈마 처리를 통해 수정-수정 직접 접합의 접합 강도가 향상되는 것을 확인하였다. 플라즈마 시간과 수정의 표면 거칠기가 접합 강도에 미치는 영향을 분석하였다. 이 방법을 이용하여 나노 임프린트 리소그래피용 스탬프를 제작하였으며, 성공적으로 나노임프린트를 수행하였다. 이 방법은 MEMS 능동 소자 제작, UV 나노임프린트 리소그래피 스탬프 등 다층 수정구조 제작에 등에 응용될 것으로 기대된다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.196-198
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• 2003

Classical lithography in semiconductor employs stepper technologies. Limits of this technology are clearly seen at structures below 100nm. Nano-imprinting lithography is a new method for generating patterns in submicron range at reasonable cost. In order to manufacture nano-imprinting lithography(NIL) equipment, several NIL manufacturers have been developing key technologies for realization of nano-imprinting process, recently. In this paper, we've been describe state-of-the-art and technology trends for nano-imprinting lithography equipments.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.9
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• pp.4178-4184
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• 2013

Nanoimprint lithography (NIL) is an emerging technology enabling cost-effective and high-throughput nanofabrication. Recently, the major trends of NIL are high throughput and large area patterning. UV curable type NIL (UV NIL) can be performed at room temperature and low pressure. And one advantage of UV NIL is that it does not need vacuum, which greatly simplifies tool construction, so that vacuum oprated high-precision stages and a large vacuum chamber are no longer needed. However, one key issue in non-vacuum environment is air bubble formation problem. Namely, can the air bubbles be completely removed from the resist. In this paper, the air bubbles formation by the method of droplet application in UV NIL with non-vacuum environment are experimentally studied. The effects of the volume of droplet and the number of dispensing points on air bubble formation are investigated.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.596-602
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• 2018

Nanoimprint lithography (NIL) is an emerging technology that enables cost-effective and high-throughput nanofabrication. In ultraviolet (UV) NIL, low-cost and high-speed production can be achieved using a non-vacuum environment at room temperature and low pressure. However, there are problems with the formation of bubble defects in such an environment. This paper investigates the shape of the mold cavity and the bubble defect formation in UV NIL in a non-vacuum environment. The bubble defect formation was simulated using two-dimensional flow analysis and the VOF method for commonly used cavity mold shapes (rectangular, elliptical, and triangular). The characteristics of the resist flow front and various contact angles were also analyzed. The shape of the mold cavity had a very significant effect on the bubble defect formation. For all cavity shapes, a smaller contact angle with the mold and larger contact angle with the substrate decreased the possibility of bubble defect formation. The elliptical shape was the most effective for preventing bubble defect formation.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.65-70
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• 2023

Nanoimprint lithography (NIL) has attracted much attention due to its process simplicity, excellent patternability, process scalability, high productivity, and low processing cost for pattern formation. However, the pattern size that can be implemented on metal materials through conventional NIL technologies is generally limited to the micro level. Here, we introduce a novel hard imprint lithography method, extreme-pressure imprint lithography (EPIL), for the direct nano-to-microscale pattern formation on the surfaces of metal substrates with various thicknesses. The EPIL process allows reliable nanoscopic patterning on diverse surfaces, such as polymers, metals, and ceramics, without the use of ultraviolet (UV) light, laser, imprint resist, or electrical pulse. Micro/nano molds fabricated by laser micromachining and conventional photolithography are utilized for the nanopatterning of Al substrates through precise plastic deformation by applying high load or pressure at room temperature. We demonstrate micro/nanoscale pattern formation on the Al substrates with various thicknesses from 20 ㎛ to 100 mm. Moreover, we also show how to obtain controllable pattern structures on the surface of metallic materials via the versatile EPIL technique. We expect that this imprint lithography-based new approach will be applied to other emerging nanofabrication methods for various device applications with complex geometries on the surface of metallic materials.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.18-23
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• 2024

Nanoimprint lithography (NIL) is widely used to form structures ranging from micro to nanoscale due to its advantage of generating high-resolution patterns at a low process cost. However, most NIL processes require the use of imprint resists and external elements such as ultraviolet light or heat, necessitating additional post-processes like etching or metal deposition to pattern the target material. Furthermore, patterning on flexible and/or non-planar films presents significant challenges. This study introduces an extreme pressure imprint lithography (EPIL) process that can form micro-/nano-scale patterns on the surface of a flexible rubber magnet composite (RMC) film at room temperature without an etching process. The EPIL technique can form ultrafine structures over large areas through the plastic deformation of various materials, including metals, polymers, and ceramics. In this study, we demonstrate the process and outcomes of creating a variety of periodic structures with diverse pattern sizes and shapes on the surface of a flexible RMC composed of strontium ferrite and chlorinated polyethylene. The EPIL process, which allows for the precise patterning on the surface of RMC materials, is expected to find broad applications in the production of advanced electromagnetic device components that require fine control and changes in magnetic orientation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.672-675
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• 2005

To imprint 70-nm wide line-patterns, we used a newly developed ultraviolet nanoimprint lithography (UV-NIL) process in which an elementwise patterned stamp (EPS), a large-area stamp, and pressurized air are used to imprint a wafer in a single step. For a single-step UV-NIL of a 4' wafer, we fabricated two identical $5'\times5'\times0.09'(W{\times}L{\times}H)$ quartz EPSs, except that one is with nanopatterns and the other without nanopatterns. Both of them consist of 16 small-area stamps, called elements, each of which is $10\;mm\;\times\;10\;mm$. UV-curable low-viscosity resin droplets were dispensed directly on each element of the EPSs. The volume and viscosity of each droplet are 3.7 nl and 7 cps. Droplets were dispensed in such a way that no air entrapment between elements and wafer occurs. When the droplets were fully pressed between ESP and wafer, some incompletely filled elements were observed because of the topology mismatch between EPS and wafer. To complete those incomplete fillings, pressurized air of 2 bar was applied to the bottom of the wafer for 2 min. Experimental results have shown that nanopatterns of the EPS were successfully transferred to the resin layer on the wafer.