• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2016.05a
• /
• pp.445-447
• /
• 2016

Performance comparison between Tunneling Field-Effect Transistors (TFETs) was examined when three types of device parameter of double-gate TFET (DG-TFET) and single-gate TFET (SG-TFET) are varied. When the channel length is over 30 nm, silicon thickness is below 20 nm, and a gate insulator thickness decreases, the performance of $I_{on}$ and SS in SG-TFETs and DG-TFETs enhances. It shows that the performance of the DG-TFETs is improved than that of SG-TFETs at three types of device parameter.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2017.05a
• /
• pp.65-68
• /
• 2017

In this paper, a multipactor test for the space qualification model of the X-band dual-mode high-power channel filter for high-speed data transmission of geostationary satellite observation payloads was conducted and compared with the 8 dB margin required for design. It was confirmed that analytically required margins were met through testing and that satisfactory test results were obtained. The design and test of the multipactor are tested according to the ECSS standard. Based on this, it is suggested that if the margin of design is sufficiently secured, it can be used in the development of the filter for space qualification model without any test.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.11
• /
• pp.26-32
• /
• 2014

Single-Carrier Frequency division multiplexing (SC-FDM) has been selected for the uplink transmission technique in 3GPP-LTE since it has an advantage of low peak-to-average power ratio (PAPR) in user's perspective. The receiver typically uses a frequency domain equalizer, which, however, suffers from noise boost and/or residual ISI especially when the channel has deep nulls. In this paper, we propose using turbo equalizer to mitigate such a problem. We provide link level performance comparison and an insight into how many iteration is needed for reasonable performance and complexity.

• Proceedings of the KIEE Conference
• /
• 1996.11a
• /
• pp.235-238
• /
• 1996

An inverted double channel AIGaAs/lnGaAs/GaAs heterostructure grown by LP-MOCVD is demonstrated and discussed. Sheet carrier densities in excess of $4.5{\times}10^{12}cm^{-2}$ at 300K are obtained with a hall mobility of $5010cm^2/V{\cdot}s$. The proposed device with a $1.8{\times}200{\mu}m^2$ gate dimension reveals an extrinsic transconductance as high as 320 mS/mm and a saturation current density as high as 820 mA/mm at 300K. This is the highest current density ever reported for GaAs MODFET's with the same gate length. Significantly improvements on gate voltage swing (up to 3.5 V) and on reverse breakdown voltage (-10V) are demonstrated due to inverted structure.

• Journal of Satellite, Information and Communications
• /
• v.9 no.2
• /
• pp.12-17
• /
• 2014

In this paper, modified EDNMOS device with DPS (double polarity source) structure are suggested to realize stable and robust ESD (electrostatic discharge) protection performance of high voltage operating microchip. This DPS structure inserts the P+ diffusion layer on N+ source side, which in intended to block lateral extension of the electron rich region from N+ source side. Based on our simulation results, the inserted P+ diffusion layer effectively prevents the formation of deep electron channeling induced by high electron injection. As a result, our proposed DPS_EDNMOS devices could overcome the double snapback effect of conventional Std_EDNMOS device.

• KIISE Transactions on Computing Practices
• /
• v.22 no.8
• /
• pp.381-386
• /
• 2016

Recently full-duplex communication in wireless networks is enabled by the advancement of self-interference cancellation technology. Full-duplex radio is a promising technology for next-generation wireless local area networks (WLAN) because it can simultaneously transmit and receive signals within the same frequency band. Since legacy medium access control (MAC) protocols are designed based on half-duplex communication, they are not suitable for full-duplex communication. In this paper, we discuss considerations of full-duplex communication and propose a novel full-duplex MAC protocol. We conducted a simulation to measure the throughput of our MAC protocol. Through the simulation results, we can verify that significant throughput gains of the proposed full-duplex MAC protocol, thus comparing the basic full-duplex MAC protocol.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.7
• /
• pp.1354-1358
• /
• 2007

Nowaday, the wideband multimedia service, high speed and great capacity internet service etc. are increasing, so the network construction with the base of optical subscriber network is necessary. As efficient and economic optical subscriber networks are developed, so efficient network construction is possible. The most technology of them is WDM(Wavelength Division Multiplexing)-PON technology of ONU(Optical Network Unit) jointing method using PON(Passive Optical Network). In this paper, we have studied on a method for automatic optimization of data modulation current as optical power when the data is transmitted.

• Journal of Veterinary Clinics
• /
• v.31 no.6
• /
• pp.495-501
• /
• 2014

The objective of this study was to evaluate the differences and reproducibility of Hounsfield unit (HU) value and volume measurements on different computed tomography (CT) scanner types and different collimations by using a gelatin phantom. The phantom consisting of five synthetic simulated calculus spanning diameters from 3.0 mm to 12.0 mm with 100 HU was scanned using a two-channel multi-detector row CT (MDCT) scanner, a four-channel MDCT scanner, and two 64-channel MDCT scanners. For all different scanner types, the thinnest possible collimation and the second thinnest collimation was used. The HU values and volumes of the synthetic simulated calculus were independently measured three times with minimum intervals of 2 weeks and by three experienced veterinary radiologists. ANOVA and Scheff$\acute{e}$ test for the multiple comparison were performed for statistical comparison of the HU values and volumes of the synthetic simulated calculus according to different CT scanner types and different collimations. The reproducibility of the HU value and volume measurements was determined by calculating Cohen's k. The reproducibility of HU value and volume measurements was very good. HU value varied between different CT scanner types, among different beam collimations. However, there was not statistically significant difference. The percent error (PE) decreased as the collimation thickness decreased, but the decrease was statistically insignificant. In addition, no statistically significant difference in the PEs of the different CT scanner types was found. It can be concluded that the CT scanner type insignificantly affects HU value and the volumetric measurement, but that a thinner collimation tends to be more useful for accurate volumetric measurement.

• Journal of Venture Innovation
• /
• v.1 no.1
• /
• pp.15-27
• /
• 2018

Interest in Fintech is extremely growing as O2O which means the binding of online and offline appears. The scale of private consumption in South korea reached about 700 trillion won, however, the online trading is only about 60 trillion won, which means 640 trillion won is still trading in offline. The reason the Fintech industry comes into the spotlight is because the foundation of related industries such as the rise of mobile traffic and the fast growth of the financial transaction through the mobile channel is forming. Especially, the introduction of payment systems among these Fintech industries offers convenience to the consumer. Mobile payment has been generalized in daily life such as utility bills and taxi fares. Use of O2O service in various industrial fields in commerce gives convenience to consumers and increase in sales to business in recent commercial transaction which is moving to on-demand channel services. People in smartphone life are supposed to find more convenient services for saving time using their phone, and this kind of environment makes the ordering goods and services through Fintech payments increase. The emergence of O2O services influences the development of Fintech industry and the emergence of convenient and reliable Fintech service through the deregulation of Fintech also affects the activation of O2O services. The complementary relationships between O2O services and Fintech would contribute to economic activation. From the standpoint of the researchers, I would like to further study the methods that can lead to a new paradigm of the financial payments industry through the development of Fintech and the drafts for the market expansion of the current offline commerce making it online in the advent of O2O services in variety industries.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.53.2-53.2
• /
• 2010

지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.