Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.11a
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- Pages.235-238
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- 1996
Characteristics of inverted AlGaAs/InGaAs/GaAs power P-HEMTs with double channel
역 이중채널 구조를 이용한 전력용 AlGaAs/InGaAs/GaAs P-HEMT의 특성
- Ahn, Kwang-Ho (Dep. of Electronic & Electrical Engineering, POSTECH) ;
- Jeong, Young-Han (Dep. of Electronic & Electrical Engineering, POSTECH) ;
- Bae, Byung-Suk (Dep. of Electronic & Electrical Engineering, POSTECH) ;
- Jeong, Yoon-Ha (Dep. of Electronic & Electrical Engineering, POSTECH)
- Published : 1996.11.16
Abstract
An inverted double channel AIGaAs/lnGaAs/GaAs heterostructure grown by LP-MOCVD is demonstrated and discussed. Sheet carrier densities in excess of